Abstract: A blower includes a housing including an inlet and an outlet, a bearing-housing structure provided to the housing and adapted to rotatably support a rotor, a motor provided to the bearing-housing structure and adapted to drive the rotor, and an impeller provided to the rotor. The bearing-housing structure includes a bearing shaft having a bearing surface that rotatably supports the rotor. The bearing shaft provides only a single bearing of the non-ball bearing type for the rotor.

Abstract: Described herein are architectures, platforms and methods for providing localized high density plasma sources igniting local gasses during a wafer fabrication process to provide global uniformity. Such plasma sources are resonant structures operating at radio frequencies at or higher than microwave values.

Abstract: Embodiments of the disclosure describe a cyclic etch method for carbon-based films. According to one embodiment, the method includes providing a substrate containing the carbon-based film, exposing the carbon-based film to an oxidizing plasma thereby forming an oxidized layer on the carbon-based film, thereafter, exposing the oxidized layer to a non-oxidizing inert gas plasma thereby removing the oxidized layer and forming a carbonized surface layer on the carbon-based film, and repeating the exposing steps at least once.

Abstract: Described herein are technologies to facilitate the fabrication of substrates, such as semiconductor wafers. More particularly, technologies described herein facilitate the correct placement of patterns of lines and spaces on a substrate. The resulting patterned substrate is the product of photolithography process and/or the pattern transference (e.g., etching) that occurs during the fabrication of substrates (e.g., semiconductor wafers). The scope of the present invention is pointed out in the appending claims.

Abstract: The present invention provides a SWP (surface wave plasma) processing system that does not create underdense conditions when operating at low microwave power and high gas pressure, thereby achieving a larger process window. The DC ring subsystem can be used to adjust the edge to central plasma density ratio to achieve uniformity control in the SWP processing system.

Abstract: Described herein are architectures, platforms and methods for providing localized high density plasma sources igniting local gasses during a wafer fabrication process to provide global uniformity. Such plasma sources are resonant structures operating at radio frequencies at or higher than microwave values.

Abstract: Described herein are technologies to facilitate the fabrication of substrates, such as semiconductor wafers. More particularly, technologies described herein facilitate the correct placement of patterns of lines and spaces on a substrate. The resulting patterned substrate is the product of photolithography process and/or the pattern transference (e.g., etching) that occurs during the fabrication of substrates (e.g., semiconductor wafers). The scope of the present invention is pointed out in the appending claims.

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may include a power electrode that may be opposite a bias electrode and a focus ring electrode that surrounds the substrate. In one embodiment, the power electrode may be coupled to a direct current (DC) source. Power applied to the bias electrode may be used to draw ions to the substrate. The plasma density may be made more uniform by applying a focus ring voltage to the focus ring that is disposed around the substrate and/or the bias electrode.

Abstract: Embodiments of the disclosure describe a cyclic etch method for carbon-based films. According to one embodiment, the method includes providing a substrate containing the carbon-based film, exposing the carbon-based film to an oxidizing plasma thereby forming an oxidized layer on the carbon-based film, thereafter, exposing the oxidized layer to a non-oxidizing inert gas plasma thereby removing the oxidized layer and forming a carbonized surface layer on the carbon-based film, and repeating the exposing steps at least once.

Abstract: The present invention provides a SWP (surface wave plasma) processing system that does not create underdense conditions when operating at low microwave power and high gas pressure, thereby achieving a larger process window. The DC ring subsystem can be used to adjust the edge to central plasma density ratio to achieve uniformity control in the SWP processing system.

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may include a power electrode that may be opposite a bias electrode and a focus ring electrode that surrounds the substrate. In one embodiment, the power electrode may be coupled to a direct current (DC) source. Power applied to the bias electrode may be used to draw ions to the substrate. The plasma density may be made more uniform by applying a focus ring voltage to the focus ring that is disposed around the substrate and/or the bias electrode.

Abstract: This invention relates to a device for performing plasma chemical vapor deposition (PCVD) for producing coated glass tubes for the drawing of optical fibers. This invention further relates to a device that uses a microwave applicator, and the applicator itself with a profile that allows for a uniform coating across a greater length of the glass tube.

Abstract: This invention relates to a device for performing plasma chemical vapor deposition (PCVD) for producing coated glass tubes for the drawing of optical fibers. This invention further relates to a device that uses a microwave applicator, and the applicator itself with a profile that allows for a uniform coating across a greater length of the glass tube.

Abstract: The invention relates to the field of PCVD methods of making an optical fiber and apparatuses for use in PCVD methods. The disclosed methods and apparatuses improve the PCVD process by enhancing the efficiency of the deposition process. The use of the disclosed methods and apparatuses, individually or in combination thereof, will result in at least reducing the time necessary to deposit a predetermined amount of glass on a substrate.

Abstract: This present invention is directed to an apparatus for depositing a plasma chemical vapor deposition (PCVD) coating on the inside of a preform used for the drawing of optical fibers. This invention further relates to a novel microwave applicator design used in the apparatus; preferably allowing for a more intense, circumferentially symmetric plasma about the longitudinal axis of the preform, under normal operating conditions; resulting in a more uniform coating and a reduced applicator length, and a method for making the coated preform.

Abstract: A method and apparatus for the pyrolytic destruction or synthesis of gases via a highly tunable combination of radio frequency heating and electron beam irradiation is disclosed. The method is appropriate for destroying toxic gases emanating from hazardous wastes and for synthesizing new molecules from the molecules of a gas. The method is also appropriate for creating scavenger gases and hot gases with large enthalpy for use in sterilization procedures, for example. Embodiments are disclosed employing inductive or direct waveguide/cavity coupling of radio frequency power to the gas. In embodiments of the invention, magnetic fields are used to modify the paths of the electrons in the beam to facilitate tuning and improve the energy efficiency of the system. In a two-stage system, solid and/or liquid wastes are first heated in order to vaporize the toxic materials.

Abstract: A toroidal ECR reactor is described in which a poloidal magnetic field is established in a plasma generating chamber in which a specimen to be processed is disposed on an electrode in a specimen chamber. Microwaves and gaseous reactants are introduced into the plasma generating chamber. A plasma discharge occurs in which high energy electrons are confined in a plasma source region extending between a magnetic mirror formed in the specimen chamber out of line-of-sight to the wafer(s) when disposed on the electrode. A baffle region formed between the two chambers prevents microwaves from entering the specimen chamber. The reactor is particularly suitable for etching or depositing films on semiconductor substrates, since the sensitive substrates are not exposed to the high energy ions and/or photons of the source region.