Patents by Inventor Bastiaan Theodoor Wolschrijn

Bastiaan Theodoor Wolschrijn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090173360
    Abstract: A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.
    Type: Application
    Filed: March 17, 2009
    Publication date: July 9, 2009
    Applicants: ASML Netherlands B.V., Carl Zeiss SMT AG
    Inventors: Maarten Marinus Johannes Wilhelmus VAN HERPEN, Vadim Yevgenyevich BANINE, Johannes Peterus Henricus DE KUSTER, Johannes Hubertus Josephina MOORS, Lucas Henricus Johannes STEVENS, Bastiaan Theodoor WOLSCHRIJN, Yurii Victorovitch SIDELNIKOV, Marc Hubertus Lorenz VAN DER VELDEN, Wouter Anthon SOER, Thomas STEIN, Kurt Gielissen
  • Publication number: 20090072168
    Abstract: A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.
    Type: Application
    Filed: November 6, 2008
    Publication date: March 19, 2009
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Vadim Yevgenyevich Banine, Vladimir Vitalevitch IVANOV, Johannes Hubertus Josephina Moors, Bastiaan Theodoor Wolschrijn, Derk Jan Wilfred Klunder, Maarten Marinus Johannes Wilhelmus Van Herpen
  • Patent number: 7491951
    Abstract: The invention relates to a lithographic apparatus that includes a system configured to condition a radiation beam or project a patterned radiation beam onto a target portion of a substrate. The system includes an optically active device configured to direct the radiation beam or the patterned radiation beam, respectively, and a support structure configured to support the optically active device. The apparatus further includes a gas supply for providing a background gas into the system. The radiation beam or patterned radiation beam react with the background gas to form a plasma that includes a plurality of ions. The support structure includes an element that includes a material that has a low sputtering yield, a high sputter threshold energy, or a high ion implantation yield, to reduce sputtering and the creation of sputtering products.
    Type: Grant
    Filed: December 28, 2005
    Date of Patent: February 17, 2009
    Assignees: ASML Netherlands B.V., Carl Zeiss SMT AG
    Inventors: Marc Hubertus Lorenz Van Der Velden, Vadim Yevgenyevich Banine, Bastiaan Matthias Mertens, Johannes Hubertus Josephina Moors, Markus Weiss, Bastiaan Theodoor Wolschrijn, Michiel D. Nijkerk
  • Patent number: 7462850
    Abstract: A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.
    Type: Grant
    Filed: December 8, 2005
    Date of Patent: December 9, 2008
    Assignee: ASML Netherlands B.V.
    Inventors: Vadim Yevgenyevich Banine, Vladimir Vitalevitch Ivanov, Johannes Hubertus Josephina Moors, Bastiaan Theodoor Wolschrijn, Derk Jan Wilfred Klunder, Maarten Marinus Johannes Wilhelmus Van Herpen
  • Patent number: 7405417
    Abstract: A lithographic apparatus is disclosed. The apparatus includes a projection system configured to project a first radiation beam onto a target portion of a substrate, and at least one monitoring device for detecting contamination in a interior space. The monitoring device includes at least one dummy element having at least one contamination receiving surface. In an aspect of the invention, there is provided at least one dummy element which does not take part in transferring a radiation beam onto a target portion of a substrate, wherein it is monitored whether a contamination receiving surface of the dummy element has been contaminated.
    Type: Grant
    Filed: December 20, 2005
    Date of Patent: July 29, 2008
    Assignee: ASML Netherlands B.V.
    Inventors: Lucas Henricus Johannes Stevens, Vadim Yevgenyevich Banine, Johannes Hubertus Josephina Moors, Bastiaan Theodoor Wolschrijn
  • Publication number: 20080151201
    Abstract: A lithographic apparatus that includes an illumination system configured to condition a radiation beam. The illumination system includes a plurality of optical components. The apparatus also includes a support constructed to support a patterning device. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The apparatus further includes a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. The projection system includes a plurality of optical components. The apparatus also includes a contamination measurement unit for measuring contamination of a surface of at least one of the optical components. The contamination measurement unit is provided with a radiation sensor constructed and arranged to measure an optical characteristic of radiation received from the surface.
    Type: Application
    Filed: December 22, 2006
    Publication date: June 26, 2008
    Applicants: ASML NETHERLANDS B.V., CARL ZEISS SMT AG
    Inventors: Arnoldus Jan Storm, Johannes Hubertus Josephina Moors, Bastiaan Theodoor Wolschrijn, Dirk Heinrich Ehm
  • Publication number: 20080143981
    Abstract: An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30° C. or more, preferably of approximately 100° C. or more, particularly preferably of approximately 150° C. or more, and even more preferably of approximately 250° C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.
    Type: Application
    Filed: September 13, 2007
    Publication date: June 19, 2008
    Applicants: Carl Zeis SMT AG, ASML Netherlands B.V.
    Inventors: Dirk Heinrich EHM, Annemieke van de Runstraat, Bastiaan Theodoor Wolschrijn, Arnoldus Jan Storm, Thomas Stein, Marco G. H. Meijerink, A. G. Ton M. Bastein, Esther L. J. van Soest-Vercammen, Norbertus Benedictus Koster, Frits G. H. M. Gubbels, Peter J. Oprel, Michiel Nienoord, Michel Riepen, Johannes Hubertus Josephina Moors
  • Publication number: 20080083885
    Abstract: A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.
    Type: Application
    Filed: October 10, 2006
    Publication date: April 10, 2008
    Applicants: ASML Netherlands B.V., Carl Zeiss SMT AG
    Inventors: Maarten Marinus Johannes Wilhelmus Van Herpen, Vadim Yevgenyevich Banine, Johannes Peterus Henricus De Kuster, Johannes Hubertus Josephina Moors, Lucas Henricus Johannes Stevens, Bastiaan Theodoor Wolschrijn, Yurii Victorovitch Sidelnikov, Marc Hubertus Lorenz Van Der Velden, Wouter Anton Soer, Thomas Stein, Kurt Gielissen
  • Publication number: 20080083878
    Abstract: A method to clean optical elements of an apparatus, the apparatus being configured to project a beam of radiation onto a target portion of a substrate, the apparatus comprising a plurality of optical elements arranged in sequence in the path of the radiation beam, wherein the cleaning method comprises: cleaning one or more second optical elements of the sequence, which receive one or more relatively low second radiation doses during operation of the apparatus, utilizing cumulatively shorter cleaning periods than one or more first optical elements of the sequence that receive one or more first radiation doses during operation of the apparatus, a second radiation dose being lower than each relatively high first radiation dose.
    Type: Application
    Filed: October 10, 2006
    Publication date: April 10, 2008
    Applicants: ASML Netherlands B.V., Carl Zeiss SMT AG
    Inventors: Dirk Heinrich Ehm, Johannes Hubertus Josephina Moors, Bastiaan Theodoor Wolschrijn, Marcus Gerhardus Hendrikus Meijerink, Thomas Stein
  • Patent number: 7279690
    Abstract: A lithographic apparatus is arranged to project a beam from a radiation source onto a substrate. The apparatus includes an optical element in a path of the beam, a gas inlet for introducing a gas into the path of the beam so that the gas will be ionized by the beam to create electric fields toward the optical element, and a gas source coupled to the gas inlet for supplying the gas. The gas has a threshold of kinetic energy for sputtering the optical element that is greater than the kinetic energy developed by ions of the gas in the electric fields.
    Type: Grant
    Filed: March 31, 2005
    Date of Patent: October 9, 2007
    Assignee: ASML Netherlands B.V.
    Inventors: Levinus Pieter Bakker, Vadim Yevgenyevich Banine, Vladimir Vitalevitch Ivanov, Konstantin Nikolaevitch Koshelev, Bastiaan Matthias Mertens, Johannes Hubertus Josephina Moors, Frank Jeroen Pieter Schuurmans, Givi Georgievitch Zukavishvili, Bastiaan Theodoor Wolschrijn, Marc Hubertus Lorenz Van Der Velden
  • Publication number: 20040227102
    Abstract: A measuring device for determining contamination of a surface of a component in an lithographic projection apparatus. The measuring device includes a radiation transmitter for transmitting radiation on at least a part of the surface and a radiation receiver for receiving radiation from the component. A processor is communicatively connected to the receiver, for deriving a property of received radiation and deriving a property of the contamination from the property of received radiation.
    Type: Application
    Filed: February 23, 2004
    Publication date: November 18, 2004
    Applicants: ASML NETHERLANDS B.V., CARL ZEISS SMT AG
    Inventors: Ralph Kurt, Michael Cornelis Van Beek, Antonie Ellert Duisterwinkel, Erik Rene Kieft, Hans Meiling, Bastiaan Matthias Mertens, Johannes Hubertus Josephina Moors, Lucas Henricus Johannes Stevens, Bastiaan Theodoor Wolschrijn