Abstract: An organic thin film transistor has a gate dielectric layer which is formed from a block copolymer. The block copolymer comprises a polar block and a nonpolar block. The resulting dielectric layer has good adhesion to the gate electrode and good compatibility with the semiconducting layer.

Abstract: A process to fabricate an electronic device comprising: (a) liquid depositing a composition comprising a liquid, silver-containing nanoparticles, a replacement stabilizer comprising a carboxylic acid on the surface of the silver-containing nanoparticles, and a residual amount of an initial stabilizer on the surface of the silver-containing nanoparticles, resulting in a deposited composition; and (b) heating the deposited composition to form an electrically conductive layer comprising silver.

Abstract: A thin-film transistor (TFT) with dual-layer source and drain electrodes is provided. Each source and drain electrode comprises a first layer and a second layer. The first layer has a work function which differs from the energy level of the semiconductor by at least 0.5 eV and the second layer has a work function matching the energy level of the semiconductor. The semiconductor has a short channel length.

Abstract: A polymer comprising one or more types of repeat units, wherein the polymer includes a substituted thieno[3,2-b]thiophene component A and a different component B in the same type of repeat unit or in different types of repeat units, and wherein the polymer excludes a substituted or unsubstituted thieno[2,3-b]thiophene moiety. The polymer can be used as a semiconductor in electronics such as in organic thin film transistors.

Abstract: A polymer comprising one or more types of repeat units, wherein the polymer includes a substituted thieno[3,2-b]thiophene component A and a different component B in the same type of repeat unit or in different types of repeat units, and wherein the polymer excludes a substituted or unsubstituted thieno[2,3-b]thiophene moiety. The polymer can be used as a semiconductor in electronics such as in organic thin film transistors.

Abstract: Disclosed is an item, for example a document, including a substrate having thereon a multiplicity of separate printed markings, wherein the printed markings include both conductive printed markings and substantially non-conductive printed markings. The different conductive and substantially non-conductive regions on the substrate can be detected, for example by measuring the resistance or current of each printed marking. The pattern of different conductive and substantially non-conductive regions can be used as a security pattern of authenticity that cannot be replicated by standard office equipment, and/or can be used to encrypt information in binary code form in the item. A system for forming and detecting the different printed markings is also described.

Abstract: A process including: providing a composition comprising silver-containing nanoparticles and molecules of an initial stabilizer on the surface of the silver-containing nanoparticles; and mixing a replacement stabilizer comprising a carboxylic acid with the composition to replace at least a portion of the initial stabilizer with the replacement stabilizer, resulting in molecules of the replacement stabilizer on the surface of the silver-containing nanoparticles.

Abstract: An electronic device including: (a) a semiconductor layer including crystalline zinc oxide; and (b) an electrode including a suitable amount of zinc, indium, or a mixture thereof.

Abstract: A thin film transistor is disclosed comprising comprises a substrate, a dielectric layer, and a semiconductor layer. The semiconductor layer, which is crystalline zinc oxide preferentially oriented with the c-axis perpendicular to the plane of the dielectric layer or substrate, is prepared by liquid depositing a zinc oxide nanodisk composition. The thin film transistor has good mobility and on/off ratio.

Abstract: An electronic device, such as a thin film transistor containing a semiconductor of the Formula: wherein R, R? and R? are, for example, independently hydrogen, a suitable hydrocarbon, a suitable hetero-containing group, a halogen, or mixtures thereof; and n represents the number of repeating units.

Abstract: An electronic device comprising a polymer comprising at least one type of repeat unit comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.

Abstract: A polymer of the following formula wherein Ar is aryl or heteroaryl; X represents CH2, sulfur, oxygen, selenium, NR?, or SiR?2 wherein R? and R? are each a suitable hydrocarbon; m represents the number of X substituents; and n represents the number of the repeating units.

Abstract: An apparatus composed of: (a) a substrate; and (b) a deposited composition comprising a liquid and a plurality of metal nanoparticles with a covalently bonded stabilizer.

Abstract: A small molecular thiophene compound consisting of: at least one divalent linkage; and a plurality of thiophene units, each thiophene unit being represented by structure (A) wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position, wherein m is 0, 1, or 2, wherein each thiophene unit is the same or different from each other in terms of substituent number, substituent identity, and substituent position, wherein each R1 is independently selected from the group consisting of: (a) a hydrocarbon group, (b) a heteroatom containing group, and (c) a halogen, wherein there is at least one thiophene unit where R1 is present at the third ring position or the fourth ring position, or at both the third ring position and the fourth ring position, wherein for any two adjacent thiophene units as represented by structure (A1): there is excluded the simultaneous presence of the same or different R1 at the 3-position of one thiophene unit and at the 3?-position of t

Abstract: An electronic device, such as a thin film transistor containing a semiconductor of Formula/Structure wherein R, R? and R? are, for example, independently hydrogen, a suitable hydrocarbon, a suitable hetero-containing group, a halogen, or mixtures thereof; and n represents the number of repeating units.

Abstract: A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.

Abstract: An electronic device including a compound comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.

Abstract: A polymer of the formula/structure wherein R, R?, and R? are, for example, a suitable hydrocarbon, a halogen (halide) a hetero-containing group, or mixtures thereof; and n represents the number of repeating groups.

Abstract: An electronic device including a compound comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.

Abstract: An electronic device including in any sequence: (a) a semiconductor layer; and (b) a phase-separated dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a higher concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the semiconductor layer.