Publication number: 20070093073
Abstract: A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
Type:
Application
Filed:
June 1, 2006
Publication date:
April 26, 2007
Inventors:
Robert Farrell, Troy Baker, Arpan Chakraborty, Benjamin Haskell, P. Pattison, Rajat Sharma, Umesh Mishra, Steven DenBaars, James Speck, Shuji Nakamura