Abstract: Techniques and mechanisms to provide wireless communication with a body-mountable device comprising a single-loop antenna. In an embodiment, distal ends of the single-loop antenna are disposed on opposite sides of a slit structure, wherein the single-loop antenna extends around a controller configured to provide any of multiple modes of high-frequency communication with the single-loop antenna. Different operational modes each provide for operation of the single-loop antenna with both a proximity-coupled feed structure and a first contact at or near a distal end of the single-loop antenna. In another embodiment, the single-loop antenna forms a hole or a recess structure which is aligned with a sensor or an input/output (I/O) mechanism of the body-mountable device.

Abstract: A method of forming a light emitting device includes forming a growth mask layer including openings on a doped compound semiconductor layer, forming first light emitting diode (LED) subpixels by forming a plurality of active regions and second conductivity type semiconductor material layers employing selective epitaxy processes, and transferring each first LED subpixel to a backplane. An anode contact electrode may be formed on the second conductivity type semiconductor material layers for redundancy. The doped compound semiconductor layer may be patterned with tapered sidewalls to enhance etendue. An optically clear encapsulation matrix may be formed on the doped compound semiconductor material layer to enhance etendue. Lift-off processes may be employed for the active regions. Cracking of the LEDs may be suppressed employing a thick reflector layer.

Abstract: A sensor cord construction to prevent capacitance variation is described herein. A sensor may be connected to a controller via a cord that includes a first cable and a second cable. The first cable includes first shield wires that are twisted around the first cable in a first direction, and the second cable includes second shield wires that are twisted around the second cable in a second direction that is opposite the first direction. When the cord is twisted, one of the first or second cables may provide a positive capacitance variation, while the other of the first or second cables may provide a negative capacitance variation in an amount that is directly proportional to the positive capacitance variation. Thus, the controller detects a minimum capacitance variation, when the cord is twisted, due to the capacitance variation of the first cable and the second cable canceling each other out.

Abstract: A light emitting device, such as an LED, is formed by forming clusters of semiconductor nanostructures separated by inter-cluster regions that lack semiconductor nanostructures over a substrate, where each semiconductor nanostructure includes a nanostructure core having a doping of a first conductivity type and an active shell formed around the nanostructure core, and selectively depositing a second conductivity type semiconductor material layer having a doping of a second conductivity type on the clusters of semiconductor nanostructures. Portions of the selectively deposited second conductivity type semiconductor material layer form a continuous material layer in each cluster of semiconductor nanostructures, and the second conductivity type semiconductor material layer is not deposited in the inter-cluster regions.

Abstract: Example wearable audio devices are disclosed. In one example implementation, a wearable audio device includes a housing defining an interior and an exterior. The exterior can have an ear engaging surface. The wearable audio device can include an audio source located within the interior of the housing. The wearable audio device can include an antenna located within the interior. The antenna can have an arc-shaped conductor with a first end and a second end defining an opening. The antenna can be positioned within the housing of the wearable audio device such that the opening of the antenna is positioned further from an ear relative to a middle portion of the arc-shaped conductor when the wearable audio device is worn in the ear.

Abstract: Techniques and mechanisms to provide wireless communication with a body-mountable device comprising a single-loop antenna. In an embodiment, distal ends of the single-loop antenna are disposed on opposite sides of a slit structure, wherein the single-loop antenna extends around a controller configured to provide any of multiple modes of high-frequency communication with the single-loop antenna. Different operational modes each provide for operation of the single-loop antenna with both a proximity-coupled feed structure and a first contact at or near a distal end of the single-loop antenna. In another embodiment, the single-loop antenna forms a hole or a recess structure which is aligned with a sensor or an input/output (I/O) mechanism of the body-mountable device.

Abstract: A growth mask layer including an array of apertures therethrough can be formed on a single crystalline gallium nitride layer. Group III nitride nanostructures including gallium nitride or indium gallium nitride nanopyramids or nanowires can be formed through the array of apertures by a selective epitaxy process. An indium gallium nitride material can be deposited by another selective epitaxy process on the Group III nitride nanostructures until a continuous indium gallium nitride template layer is formed. The continuous indium gallium nitride template layer has a dislocation density that decreases with distance from the growth mask layer. Red light emitting diodes can be formed over the continuous indium gallium nitride template layer with higher efficiency due the relatively large lattice constant of the continuous indium gallium nitride template layer.

Abstract: Techniques and mechanisms to provide wireless communication with a body-mountable device comprising a single-loop antenna. In an embodiment, distal ends of the single-loop antenna are disposed on opposite sides of a slit structure, wherein the single-loop antenna extends around a controller configured to provide any of multiple modes of high-frequency communication with the single-loop antenna. Different operational modes each provide for operation of the single-loop antenna with both a proximity-coupled feed structure and a first contact at or near a distal end of the single-loop antenna. In another embodiment, the single-loop antenna forms a hole or a recess structure which is aligned with a sensor or an input/output (I/O) mechanism of the body-mountable device.

Abstract: A direct view multicolor light emitting device includes blue, green and red light emitting diodes (LEDs) in each pixel. The different light emitting diodes can be formed by depositing different types of active region layers in a stack such that deposition area of each subsequent active region is less than the deposition area of any preceding active region, and by patterning the active region layers into different types of stacks. The active region layers may be formed as planar layers, or may be formed on semiconductor nanowires. The active region layers can emit light at the respective target wavelength range. Alternatively, at least one of green and red phosphor materials, dye materials, or quantum dots may be used instead of or in addition to the active regions that emit light at a wavelength different from a target wavelength of a respective LED.

Abstract: Methods and structures for forming flat, continuous, planar, epitaxial layers of semipolar III-nitride materials on patterned sapphire substrates are described. Semipolar GaN may be grown from inclined c-plane facets on a patterned sapphire substrate, and coalesced to form a continuous layer of semipolar III-nitride semiconductor over the sapphire substrate. Planarization of the layer is followed by crystal regrowth using a nitrogen carrier gas to produce a flat, microfabrication-grade, process surface of semipolar III-nitride semiconductor across the substrate. Quality multiple quantum wells can be fabricated in the regrown semipolar material.

Abstract: Methods and structures for forming epitaxial layers of semipolar III-nitride materials on patterned sapphire substrates are described. Semi-nitrogen-polar GaN may be grown from inclined c-plane facets of sapphire and coalesced to form a continuous layer of (2021) GaN over the sapphire substrate. Nitridation of the sapphire and a low-temperature GaN buffer layer is used to form semi-nitrogen-polar GaN.

Abstract: Arrangements for bone conduction transducers (BCTs) that couple to wearable devices are described herein. An example BCT couples to a wearable device via a moveable member, and is arranged on the wearable such that the BCT member moves so as to provide an indication as to whether or not the wearable device is being worn.

Abstract: A direct view multicolor light emitting device includes blue, green and red light emitting diodes (LEDs) in each pixel. The different light emitting diodes can be formed by depositing different types of active region layers in a stack such that deposition area of each subsequent active region is less than the deposition area of any preceding active region, and by patterning the active region layers into different types of stacks. The active region layers may be formed as planar layers, or may be formed on semiconductor nanowires. The active region layers can emit light at the respective target wavelength range. Alternatively, at least one of green and red phosphor materials, dye materials, or quantum dots may be used instead of or in addition to the active regions that emit light at a wavelength different from a target wavelength of a respective LED.

Abstract: Arrangements for bone conduction transducers (BCTs) that couple to wearable devices are described herein. An example BCT couples to a wearable device via a moveable member, and is arranged on the wearable such that the BCT member moves so as to provide an indication as to whether or not the wearable device is being worn.

Abstract: An electronic smart pen is disclosed that comprises a housing with a twist ring and a marker that is configured to be in an exposed state or in a retracted state. In the exposed state a tip of the marker is exposed from the housing, while the retracted state has the tip being enclosed by the housing. The smart pen also comprises an internal power switch that toggles the electronics of the smart pen between an on-state and an off-state. Rotating the twist ring provides a combined mechanism to move the marker from the retracted state to the exposed state, while also toggling the power switch from the off-state to the on-state so that the marker is automatically extended when the pen is turned on.

Abstract: Methods and structures for forming epitaxial layers of semipolar III-nitride materials on patterned sapphire substrates are described. Semi-nitrogen-polar GaN may be grown from inclined c-plane facets of sapphire and coalesced to form a continuous layer of (2021) GaN over the sapphire substrate. Nitridation of the sapphire and a low-temperature GaN buffer layer is used to form semi-nitrogen-polar GaN.

Abstract: Methods and structures for forming flat, continuous, planar, epitaxial layers of semipolar III-nitride materials on patterned sapphire substrates are described. Semipolar GaN may be grown from inclined c-plane facets on a patterned sapphire substrate, and coalesced to form a continuous layer of semipolar III-nitride semiconductor over the sapphire substrate. Planarization of the layer is followed by crystal regrowth using a nitrogen carrier gas to produce a flat, microfabrication-grade, process surface of semipolar III-nitride semiconductor across the substrate. Quality multiple quantum wells can be fabricated in the regrown semipolar material.

Abstract: An electronic smart pen is disclosed that comprises an antenna assembly to enable wireless communication with an external communication device. The antenna assembly comprises a flexible thin printed circuit board film. A transmission window made of a substantially non-conductive material is exposed to an exterior of the pen through an opening in a housing made of a substantially conductive material. The antenna is placed within the enclosure of the housing next to the transmission window such that electromagnetic communications to and from the antenna assembly can pass through the transmission window despite the shielding effects of the conductive housing, thus yielding sufficient power gain and efficiency for wireless communication.

Abstract: An electronic smart pen is disclosed that comprises a housing with a twist ring and a marker that is configured to be in an exposed state or in a retracted state. In the exposed state a tip of the marker is exposed from the housing, while the retracted state has the tip being enclosed by the housing. The smart pen also comprises an internal power switch that toggles the electronics of the smart pen between an on-state and an off-state. Rotating the twist ring provides a combined mechanism to move the marker from the retracted state to the exposed state, while also toggling the power switch from the off-state to the on-state so that the marker is automatically extended when the pen is turned on.