Abstract: The invention relates to a diffuser 3 intended to be facing a light source 1 comprising a transmission layer 10 and a diffusion layer 22, 23 intended to diffuse a light transmitted by the light source, the diffuser being characterised in that the diffusion layer comprises a plurality of metal structures 200, 200a, 200b, called metal nanostructures, having dimensions less than a wavelength of the light transmitted, said metal nanostructures having varied sizes and being distributed within the diffusion layer such that adjacent metal nanostructures have between them, varied distances and preferably less than the wavelength of the light transmitted. The invention also relates to a method for manufacturing such a diffuser, and a display system comprising such a diffuser.

Abstract: A method of manufacturing an emissive screen comprising LEDs, including the steps of: a) depositing a first metal layer on a surface of a control circuit; b) depositing a second metal layer on a surface of an optoelectronic circuit; c) bonding the optoelectronic circuit to the control circuit by direct bonding of the second metal layer to the first metal layer, by aligning the optoelectronic circuit with respect to the control circuit so that different emission cells of the optoelectronic circuit are arranged opposite different metal connection pads of the control circuit; and d) forming, from the surface of the optoelectronic circuit opposite to the control circuit, trenches laterally delimiting each emission cell.

Abstract: The invention relates to a diffuser 3 intended to be facing a light source 1 comprising a transmission layer 10 and a diffusion layer 22, 23 intended to diffuse a light transmitted by the light source, the diffuser being characterised in that the diffusion layer comprises a plurality of metal structures 200, 200a, 200b, called metal nanostructures, having dimensions less than a wavelength of the light transmitted, said metal nanostructures having varied sizes and being distributed within the diffusion layer such that adjacent metal nanostructures have between them, varied distances and preferably less than the wavelength of the light transmitted. The invention also relates to a method for manufacturing such a diffuser, and a display system comprising such a diffuser.

Abstract: The invention relates to a diffuser 3 intended to receive the light transmitted by a visible light source 1 comprising a transmission layer 10 and a diffusion layer 22 intended to diffuse said light, the diffuser being characterised in that the diffusion layer comprises a plurality of metal nanostructures 200, each of these metal nanostructures having, in projection in a main extension plane xy, a longitudinal dimension L along a longitudinal axis and a transverse dimension l along a transverse axis, said longitudinal and transverse dimensions being different to one another and the transverse dimension l being less than 650 nm, and in that these metal nanostructures are further distributed within the diffusion layer such that at least two adjacent metal nanostructures are respectively oriented along two non-parallel longitudinal axes. The invention also relates to a method for manufacturing such a diffuser, and a display system comprising such a diffuser.

Abstract: A method of manufacturing a primary mold for the forming of a retroreflective screen, the method including the steps of: a) forming, on the front surface of such a substrate, a layer of a material such that the first substrate is selectively etchable over said layer; and b) forming microrecesses from the rear surface of the first substrate by selective etching of the first substrate over said layer, each microrecess emerging on the rear surface of said layer and having a back parallel to the front surface of the first substrate and first and second lateral walls orthogonal to each other and orthogonal to the back the first and second lateral walls and the back of the microrecess joining at a same point and forming a trihedron.

Abstract: A method of manufacturing a layer containing quantum dots, the layer including first regions where the quantum dots are active and second regions where the quantum dots are inactive, the method including: a) depositing on a support a first layer of a matrix containing quantum dots; b) depositing on the first layer a second resist layer; c) exposing the second layer to light through a mask delimiting the first and second regions, and then developing the resin of the second layer to remove the resin of the second layer opposite the second regions while keeping it opposite the first regions; and d) removing the resin of the second layer opposite the first regions without removing the first layer.

Abstract: A method of manufacturing a primary mold for the forming of a retroreflective screen, the method including the steps of: a) forming, on the front surface of such a substrate, a layer of a material such that the first substrate is selectively etchable over said layer; and b) forming microrecesses from the rear surface of the first substrate by selective etching of the first substrate over said layer, each microrecess emerging on the rear surface of said layer and having a back parallel to the front surface of the first substrate and first and second lateral walls orthogonal to each other and orthogonal to the back the first and second lateral walls and the back of the microrecess joining at a same point and forming a trihedron.

Abstract: A method of manufacturing a layer containing quantum dots, the layer including first regions where the quantum dots are active and second regions where the quantum dots are inactive, the method including: a) depositing on a support a first layer of a matrix containing quantum dots; b) depositing on the first layer a second resist layer; c) exposing the second layer to light through a mask delimiting the first and second regions, and then developing the resin of the second layer to remove the resin of the second layer opposite the second regions while keeping it opposite the first regions; and d) removing the resin of the second layer opposite the first regions without removing the first layer.

Abstract: The invention relates to a matrix display screen which includes, in sequence: a mounting (50); at least one first metal portion (156); a stack of layers (52, 72, 86, 104) including transistors (TFT1, TFT2); and organic light-emitting diodes (32).

Abstract: The invention relates to a matrix display screen which includes, in sequence: a mounting (50); at least one first metal portion (156); a stack of layers (52, 72, 86, 104) including transistors (TFT1, TFT2); and organic light-emitting diodes (32).

Abstract: An organic optoelectronic device incorporating a hermetic thin-film encapsulation, and encapsulation method are provided. This device has a useful emission or absorption face and, behind this face, a substrate coated with an array of radiation-emitting or radiation-absorbing organic structures inserted between, and electrically contacting, electrodes that are respectively proximal and distal relative to the substrate. Separating beads between structures, composed of an insulating material, extend between the respective proximal electrodes of the structures from peripheral edges of these electrodes. The device includes a hermetic encapsulation that has at least one inorganic internal film surmounting the distal electrode, a photosensitive polymer layer covering this internal film, and a dielectric inorganic external film acting as a barrier covering the polymer layer.

Abstract: An organic optoelectronic device incorporating a hermetic thin-film encapsulation, and encapsulation method are provided. This device-has a useful emission or absorption face and, behind this face, a substrate coated with an array of radiation-emitting or radiation-absorbing organic structures inserted between, and electrically contacting, electrodes that are respectively proximal and distal relative to the substrate. Separating beads between structures, composed of an insulating material, extend between the respective proximal electrodes of the structures from peripheral edges of these electrodes. The device includes a hermetic encapsulation that has at least one inorganic internal film surmounting the distal electrode, a photosensitive polymer layer covering this internal film, and a dielectric inorganic external film acting as a barrier covering the polymer layer.

Abstract: The invention relates to an organic optoelectronic device, such as a display device, which is protected from the surrounding air by a sealed encapsulation which includes thin layers, and to a method for encapsulating the same. Said device has an electroluminescent unit having at least one active area (5) covered with a multi-layer encapsulation structure (201) and an electric connection area adjacent to the active area, the encapsulation structure including n stack(s) (n?1) comprising an inorganic film F1, . . . , Fn and a photosensitive layer C1, . . . , Cn, including an internal stack F1/C1 in which F1 covers the active area and C1, which is deposited in a liquid phase, is superposed thereon. According to the invention, the layer or each layer C1, Cn is etched and covers the film F1, . . . , Fn by extending around a peripheral edge (5a) of the active area in at least one structured surrounding portion (210, 211, 212) ending beyond the adjacent connection area, and if n>2, the or each layer C2, . . .

Abstract: The invention relates to an organic optoelectronic device, such as a display device, which is protected from the surrounding air by a sealed encapsulation which includes thin layers, and to a method for encapsulating the same. Said device has an electroluminescent unit having at least one active area (5) covered with a multi-layer encapsulation structure (201) and an electric connection area adjacent to the active area, the encapsulation structure including n stack(s) (n?1) comprising an inorganic film F1, . . . , Fn and a photosensitive layer C1, . . . , Cn, including an internal stack F1/C1 in which F1 covers the active area and C1, which is deposited in a liquid phase, is superposed thereon. According to the invention, the layer or each layer C1, Cn is etched and covers the film F1, . . . , Fn by extending around a peripheral edge (5a) of the active area in at least one structured surrounding portion (210, 211, 212) ending beyond the adjacent connection area, and if n>2, the or each layer C2, . . .