Abstract: A sputtering target used in carrying out a PVD coating process where the sputtering target is sputtered by bombardment with gas atoms and a layer consisting of several metallic elements is deposited onto a substrate, the sputtering target being a plate made of a metal used for building up the layer, and with the other metals used for building up the layer being present at least partially in the form of plugs, which are inserted in holes in the plate, the shape of the free surfaces of the plugs being selected in such a way that the sputtering rate for each metal used in the sputtering process can be set according to the desired composition of the layer being applied.

Abstract: This invention consits of a sputtering target used in carrying out a PVD coating process where the sputtering target is sputtered by bombardment with gas atoms and a layer consisting of several metallic elements is deposited onto a substrate, the sputtering target being a plate (2) made of a metal used for building up said layer, and with the other metals used for building up the layer bieng present at least partially in the form of plugs (1), which are inserted in holes in the plate (2), the shape of the free surfaces of the plugs (1) being selected in such a way that the sputtering rate for each metal used in sputtering process can be set according to the desired composition of the layer being applied.

Abstract: The invention relates to a PVD coating method and to a PVD coating device with a chamber in which at least one target cathode, at least one anode and at least one substrate holder which is intended to hold at least one substrate are arranged, and with a control device which delivers a first voltage in order to supply the target cathode with a negative electrical potential relative to the anode in order to form a plasma in which the substrate is arranged, and which delivers a second voltage in order to supply the anode with a positive electrical potential relative to the chamber wall. In this sputter-coating device, the ion fraction of the target material which can be achieved is too low for qualitatively satisfactory coating properties. It is increased according to the invention in that the control device delivers a third voltage which supplies the substrate with an electrical potential that is more negative than the potential of the anode.

Abstract: The invention relates to a PVD coating method and to a PVD coating device with a chamber (1) in which at least one target cathode (3), at least one anode (2) and at least one substrate holder (9) which is intended to hold at least one substrate (10) are arranged, and with a control device (4, 6, 7) which delivers a first voltage in order to supply the target cathode (3) with a negative electrical potential relative to the anode (2) in order to form a plasma (P) in which the substrate (10) is arranged, and which delivers a second voltage in order to supply the anode (2) with a positive electrical potential relative to the chamber wall (8). In this sputter-coating device, the ion fraction of the target material which can be achieved is too low for qualitatively satisfactory coating properties.