Patents by Inventor Berthold Schum
Berthold Schum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9583652Abstract: A method for the wet-chemical etching of a highly doped silicon layer in an etching solution is provided. The method includes using, as an etching solution so as to perform etching homogeneously, an HF-containing etching solution containing at least one oxidizing agent selected from the group of peroxodisulfates, peroxomonosulfates, and hydrogen peroxide.Type: GrantFiled: September 2, 2011Date of Patent: February 28, 2017Assignee: CSEM CENTRE SUISSE D'ELECTRONIQUE ET DE MICROTECHNIQUE SA—RECHERCHE ET DEVÉLOPPEMENTInventors: Agata Lachowicz, Berthold Schum, Knut Vaas
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Patent number: 9558952Abstract: A process for edge isolation or texture smoothing of a substrate, in which a process medium which allows control treatment of limited regions of the substrate is used. The process is therefore particularly suitable for one-sided treatment of substrates. The viscosity of the process medium plays a central role here. Furthermore, an apparatus designed for the process is presented.Type: GrantFiled: August 12, 2013Date of Patent: January 31, 2017Assignee: Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung E.V.Inventors: Agata Lachowicz, Berthold Schum, Heinrich Blanke
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Publication number: 20150243517Abstract: A process for edge isolation or texture smoothing of a substrate, in which a process medium which allows control treatment of limited regions of the substrate is used. The process is therefore particularly suitable for one-sided treatment of substrates. The viscosity of the process medium plays a central role here. Furthermore, an apparatus designed for the process is presented.Type: ApplicationFiled: August 12, 2013Publication date: August 27, 2015Inventors: Agata Lachowicz, Berthold Schum, Heinrich Blanke
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Patent number: 8889536Abstract: A method is provided for forming a dopant profile based on a surface of a wafer-like semiconductor component with phosphorus as a dopant. The method includes the steps of applying a phosphorus dopant source onto the surface, forming a first dopant profile with the dopant source that is present on the surface, removing the dopant source, and forming a second dopant profile that has a greater depth in comparison to the first dopant profile. In order to form an optimized dopant profile, the dopant source is removed after forming the first dopant profile, and precipitates that are crystallized selectively on or in the surface from the precipitates SixPy and SixPyOz are removed.Type: GrantFiled: August 30, 2011Date of Patent: November 18, 2014Assignee: Schott Solar AGInventors: Gabriele Blendin, Joerg Horzel, Agata Lachowicz, Berthold Schum
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Publication number: 20130280898Abstract: A method is provided for forming a dopant profile based on a surface of a wafer-like semiconductor component with phosphorus as a dopant. The method includes the steps of applying a phosphorus dopant source onto the surface, forming a first dopant profile with the dopant source that is present on the surface, removing the dopant source, and forming a second dopant profile that has a greater depth in comparison to the first dopant profile. In order to form an optimized dopant profile, the dopant source is removed after forming the first dopant profile, and precipitates that are crystallized selectively on or in the surface from the precipitates SixPy and SixPyOz are removed.Type: ApplicationFiled: August 30, 2011Publication date: October 24, 2013Applicant: SCHOTT SOLAR AGInventors: Gabriele Blendin, Joerg Horzel, Agata Lachowicz, Berthold Schum
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Patent number: 8563440Abstract: A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium.Type: GrantFiled: September 29, 2009Date of Patent: October 22, 2013Assignee: Schott Solar AGInventors: Andreas Teppe, Berthold Schum, Dieter Franke, Ingo Schwirtlich, Knut Vaas, Wilfried Schmidt
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Publication number: 20130255772Abstract: A method for the wet-chemical etching of a highly doped silicon layer in an etching solution is provided. The method includes using, as an etching solution so as to perform etching homogeneously, an HF-containing etching solution containing at least one oxidizing agent selected from the group of peroxodisulfates, peroxomonosulfates, and hydrogen peroxide.Type: ApplicationFiled: September 2, 2011Publication date: October 3, 2013Applicant: Schott Solar AGInventors: Agata Lachowicz, Berthold Schum, Knut Vaas
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Publication number: 20130228220Abstract: A method for the wet-chemical etching of a silicon layer in an alkaline etching solution is provided, where the silicon layer is the surface region of a solar cell emitter. The method ensures that the surface region of the emitter is etched-back homogeneously using an oxidant-free alkaline etching solution comprising at least one organic moderator is used for the isotropic etching back of the surface region of the emitter, where the moderator has a dopant concentration of at least 1018 atoms/cm3.Type: ApplicationFiled: September 2, 2011Publication date: September 5, 2013Applicant: SCHOTT SOLAR AGInventors: Berthold Schum, Knut Vaas, Agata Lachowicz, Norman Hermert
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Publication number: 20130220420Abstract: A method for the wet-chemical etching of a solar cell emitter is provided. The method performs homogeneous etching using an alkaline etching solution containing at least one oxidizing agent selected from the group consisting of peroxodisulphates, peroxomonosulphates and hypochlorite.Type: ApplicationFiled: September 2, 2011Publication date: August 29, 2013Applicant: SCHOTT SOLAR AGInventors: Agata Lachowicz, Berthold Schum, Knut Vaas
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Patent number: 8148191Abstract: The present invention relates firstly to HF/fluoride-free etching and doping media which are suitable both for the etching of inorganic layers and also for the doping of underlying layers. The present invention secondly also relates to a process in which these media are employed.Type: GrantFiled: October 7, 2008Date of Patent: April 3, 2012Assignee: Merck Patent GmbHInventors: Sylke Klein, Armin Kübelbeck, Werner Stockum, Wilfried Schmidt, Berthold Schum
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Publication number: 20110183524Abstract: A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium. In this way, the atmosphere can be adjusted in relation to the partial pressures of the components in the process medium such that the top surface preserves hydrophobic characteristics.Type: ApplicationFiled: September 29, 2009Publication date: July 28, 2011Applicant: SCHOTT SOLAR AGInventors: Andreas Teppe, Berthold Schum, Dieter Franke, Ingo Schwirtlich, Knut Vaas, Wilfried Schmidt
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Publication number: 20110165726Abstract: A method for producing at least one functional layer on at least one region of a surface of a semiconductor component by applying a liquid to at least the one region, where the functional layer has a layer thickness d1 and the liquid required for forming the functional layer having the thickness d1 has a layer thickness d2. In order that functional layers having a desired thin and uniform thickness are produced in a reproducible manner, it is proposed that the liquid is applied to the at least one region of the surface in excess with a layer thickness d3 where d3>d2 and that subsequently, either with the semiconductor component moved in translational fashion or with the semiconductor component arranged in stationary fashion, excess liquid is removed from the surface in a contactless manner to an extent such that the liquid layer has the thickness d2 or approximately the thickness d2.Type: ApplicationFiled: August 26, 2009Publication date: July 7, 2011Applicant: SCHOTT SOLAR AGInventors: Knut Vaas, Berthold Schum, Wilfried Schmidt, Dieter Franke, Ingo Schwirtlich
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Patent number: 7629257Abstract: The invention concerns etching and doping substances free of hydrochloric/fluoride acid used for etching inorganic layers as well as for doping subjacent layers. The invention also concerns a method wherein said substances are used.Type: GrantFiled: September 13, 2002Date of Patent: December 8, 2009Assignee: Merck PatentgesellschaftInventors: Sylke Klein, Armin Kübelbeck, Werner Stockum, Wilfried Schmidt, Berthold Schum
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Publication number: 20090071540Abstract: The present invention relates firstly to HF/fluoride-free etching and doping media which are suitable both for the etching of inorganic layers and also for the doping of underlying layers. The present invention secondly also relates to a process in which these media are employed.Type: ApplicationFiled: October 7, 2008Publication date: March 19, 2009Inventors: Sylke KLEIN, Armin Kubelbeck, Wemer Stockum, Wilfried Schmidt, Berthold Schum
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Publication number: 20040242019Abstract: The invention concerns etching and doping substances free of hydrochloric/fluoride acid used for etching inorganic layers as well as for doping subjacent layers. The invention also concerns a method wherein said substances are used.Type: ApplicationFiled: April 12, 2004Publication date: December 2, 2004Inventors: Sylke Klein, Armin Kubelbeck, Werner Stockum, Wilfried Schmidt, Berthold Schum
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Patent number: 6306224Abstract: A process and device for treating sheet objects, especially fragile sheet objects, by rotation through a liquid bath. The objects are disposed in radial slots in a rotating disk, retained therein by a flexible element moving synchronously with the disk, and by a retaining element mounted adjacent the disk and spaced therefrom along its axis of rotation.Type: GrantFiled: July 7, 1999Date of Patent: October 23, 2001Assignee: Angewandte Solarenergie-ASE GmbHInventors: Gernot Wandel, Fritz Heyer, Berthold Schum
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Patent number: 4915978Abstract: A method and a device are proposed for formation of a layer on a surface of a substrate by plasma-chemical process, where the surface is aligned parallel to the electrical field required for the plasma-chemical process. In addition, the gas required therefor flows directly onto the surface.Type: GrantFiled: December 8, 1988Date of Patent: April 10, 1990Assignee: Nukem GmbHInventors: Hilmar von Campe, Dietmar Liedtke, Berthold Schum, WoJorg
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Patent number: 4891325Abstract: A method is proposed for re-using silicon base material of defective MIS inversion-layer solar cells, where at least MIS solar cell-specific layers are stripped off and replaced by corresponding new layers.Type: GrantFiled: July 14, 1988Date of Patent: January 2, 1990Assignee: Nukem GmbHInventors: Rudolf Hezel, Winfried Hoffmann, Berthold Schum
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Patent number: 4812416Abstract: In order to be able to check whether or not a glow procedure is executed properly, i.e. reproducibly, the temporal course of the formation of characteristic stable reaction products is traced mass spectrometrically.Type: GrantFiled: November 28, 1986Date of Patent: March 14, 1989Inventors: Gerd Hewig, Berthold Schum, Jorg Worner