Patents by Inventor Bi Jang

Bi Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7910491
    Abstract: A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.
    Type: Grant
    Filed: May 7, 2009
    Date of Patent: March 22, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Young Soo Kwon, Bi Jang, Anchuan Wang, Young S. Lee, Mihaela Balseanu, Li-Qun Xia, Jin Ho Jeon
  • Patent number: 7857727
    Abstract: A concentric joint mechanism includes a frame, a flexible spherical body, a first friction wheel, a first power device, and a fixing device. The flexible spherical body is disposed inside the frame. The first friction wheel is disposed inside the frame and abuts against the flexible spherical body for driving the flexible spherical body to rotate in a first direction. The first power device is connected to the first friction wheel for providing power to the first friction wheel. The fixing device is connected to the frame and abuts against the flexible spherical body for fixing the flexible spherical body inside the frame together with the first friction wheel.
    Type: Grant
    Filed: October 24, 2008
    Date of Patent: December 28, 2010
    Assignee: Micro-Star Int'l Co., Ltd.
    Inventor: Bi-Jang Rung
  • Patent number: 7754610
    Abstract: A method of plasma etching tungsten silicide over polysilicon particularly useful in fabricating flash memory having both a densely packed area and an open (iso) area requiring a long over etch due to microloading. Wafer biasing is decreased in the over etch. The principal etchant include NF3 and Cl2. Argon is added to prevent undercutting at the dense/iso interface. Oxygen and nitrogen oxidize any exposed silicon to increase etch selectivity and straightens the etch profile. SiCl4 may be added for additional selectivity.
    Type: Grant
    Filed: June 2, 2006
    Date of Patent: July 13, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Kyeong-Tae Lee, Jinhan Choi, Bi Jang, Shashank C. Deshmukh, Meihua Shen, Thorsten B. Lill, Jae Bum Yu
  • Publication number: 20100099236
    Abstract: A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.
    Type: Application
    Filed: May 7, 2009
    Publication date: April 22, 2010
    Applicant: Applied Materials, Inc.
    Inventors: Young Soo Kwon, Bi Jang, Anchuan Wang, Young S. Lee, Mihaela Balseanu, Li-Qun Xia, Jin Ho Jeon
  • Publication number: 20100024594
    Abstract: A concentric joint mechanism includes a frame, a flexible spherical body, a first friction wheel, a first power device, and a fixing device. The flexible spherical body is disposed inside the frame. The first friction wheel is disposed inside the frame and abuts against the flexible spherical body for driving the flexible spherical body to rotate in a first direction. The first power device is connected to the first friction wheel for providing power to the first friction wheel. The fixing device is connected to the frame and abuts against the flexible spherical body for fixing the flexible spherical body inside the frame together with the first friction wheel.
    Type: Application
    Filed: October 24, 2008
    Publication date: February 4, 2010
    Inventor: Bi-Jang Rung
  • Patent number: 7458874
    Abstract: A robot-like electronic device changeable from a cubical or box profile to a robot profile includes a first body, two second bodies and a third body. The two second bodies are hinged to two sides of the first body through a swiveling beam. The third body is pivotally coupled on the bottom side of the first body. The first, second and third bodies can swivel relative to one another. The two second bodies and the third body can be coupled with the first body, to become a cubic or box. The two second bodies also may be swiveled outwards, like two arms of a robot. The third body can be swiveled 90 degrees relative to the first body and bent forwards like a foot, so that the first body can stand upright on a flat surface like a robot.
    Type: Grant
    Filed: December 12, 2005
    Date of Patent: December 2, 2008
    Assignee: Micro-Star Int'l Co., Ltd.
    Inventors: Bi-Jang Rung, Yi-Lung Wu, Ching-Yuan Yang
  • Publication number: 20070281479
    Abstract: A method of plasma etching tungsten silicide over polysilicon particularly useful in fabricating flash memory having both a densely packed area and an open (iso) area requiring a long over etch due to microloading. Wafer biasing is decreased in the over etch. The principal etchant include NF3 and Cl2. Argon is added to prevent undercutting at the dense/iso interface. Oxygen and nitrogen oxidize any exposed silicon to increase etch selectivity and straightens the etch profile. SiCl4 as an example of a silicon and chlorine containing passivating gas may be added for additional selectivity.
    Type: Application
    Filed: August 31, 2006
    Publication date: December 6, 2007
    Applicant: Applied Materials, Inc.
    Inventors: Kyeong-Tae Lee, Jinhan Choi, Bi Jang, Shashank C. Deshmukh, Meihua Shen, Thorsten B. Lill, Jae Bum Yu
  • Publication number: 20070281477
    Abstract: A method of plasma etching tungsten silicide over polysilicon particularly useful in fabricating flash memory having both a densely packed area and an open (iso) area requiring a long over etch due to microloading. Wafer biasing is decreased in the over etch. The principal etchant include NF3 and Cl2. Argon is added to prevent undercutting at the dense/iso interface. Oxygen and nitrogen oxidize any exposed silicon to increase etch selectivity and straightens the etch profile. SiCl4 may be added for additional selectivity.
    Type: Application
    Filed: June 2, 2006
    Publication date: December 6, 2007
    Applicant: Applied Materials, Inc.
    Inventors: Kyeong-Tae Lee, Jinhan Choi, Bi Jang, Shashank Deshmukh, Meihua Shen, Thorsten Lill, Jae Yu
  • Publication number: 20060135034
    Abstract: A robot-like electronic device changeable from a cubical or box profile to a robot profile includes a first body, two second bodies and a third body. The two second bodies are hinged to two sides of the first body through a swiveling beam. The third body is pivotally coupled on the bottom side of the first body. The first, second and third bodies can swivel relative to one another. The two second bodies and the third body can be coupled with the first body, to become a cubic or box. The two second bodies also may be swiveled outwards, like two arms of a robot. The third body can be swiveled 90 degrees relative to the first body and bent forwards like a foot, so that the first body can stand upright on a flat surface like a robot.
    Type: Application
    Filed: December 12, 2005
    Publication date: June 22, 2006
    Inventors: Bi-Jang Rung, Yi-Lung Wu, Ching-Yuan Yang
  • Patent number: 6756313
    Abstract: We have developed a method of selectively etching silicon nitride relative to oxides in a high density plasma chamber of the kind presently known in the art. We have obtained selectivities for silicon nitride:silicon oxide in the range of about 15:1 to about 24:1. We have employed the method in the etching of silicon nitride spacers for sub 0.25 &mgr;m devices, where the spacers are adjacent to exposed oxides during the etch process. We have obtained silicon nitride spacers having rounded top corners and an extended “tail” toward the bottom outer edge of the nitride spacer. The method employs a plasma source gas which typically includes SF6, HBr, N2 and optionally, O2. Typically, the pressure in the etch chamber during etching is at least 35 mTorr and the substrate temperature is about 20° C. or less.
    Type: Grant
    Filed: May 2, 2002
    Date of Patent: June 29, 2004
    Inventors: Jinhan Choi, Bi Jang, Nam-hun Kim
  • Publication number: 20030207585
    Abstract: We have developed a method of selectively etching silicon nitride relative to oxides in a high density plasma chamber of the kind presently known in the art. We have obtained selectivities for silicon nitride:silicon oxide in the range of about 15:1 to about 24:1. We have employed the method in the etching of silicon nitride spacers for sub 0.25 &mgr;m devices, where the spacers are adjacent to exposed oxides during the etch process. We have obtained silicon nitride spacers having rounded top corners and an extended “tail” toward the bottom outer edge of the nitride spacer. The method employs a plasma source gas which typically includes SF6, HBr, N2 and optionally, O2. Typically, the pressure in the etch chamber during etching is at least 35 mTorr and the substrate temperature is about 20° C. or less.
    Type: Application
    Filed: May 2, 2002
    Publication date: November 6, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Jinhan Choi, Bi Jang, Nam-hun Kim