Patents by Inventor Biichi Hoshino

Biichi Hoshino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reflection photomasks including buffer layer comprising group VIII metal, and methods of fabricating and using the same
    Patent number: 6699625
    Abstract: Reflection photomasks add a buffer layer including at least one Group VIII metal between a reflection layer and an absorber pattern that is configured to absorb extreme ultraviolet rays therein. In particular, reflection photomasks include a substrate and a reflection layer having multiple sets of alternating films of first and second materials, on the substrate. A buffer layer including at least one Group VIII metal is provided on the reflection layer opposite the substrate. An absorber pattern including material that is patterned in a pattern and that is configured to absorb extreme ultraviolet rays, is provided on the buffer layer opposite the reflection layer. The at least one Group VIII metal preferably is Ru. At least a portion of the Ru buffer layer may be less than about 3 nm thick. Alternatively, the Group VIII metal can include Pt, Ir and/or Pd.
    Type: Grant
    Filed: October 12, 2001
    Date of Patent: March 2, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byoung-taek Lee, Taro Ogawa, Biichi Hoshino
  • Reflection photomasks including buffer layer comprising group VIII metal, and methods of fabricating and using the same
    Publication number: 20020045108
    Abstract: Reflection photomasks add a buffer layer including at least one Group VIII metal between a reflection layer and an absorber pattern that is configured to absorb extreme ultraviolet rays therein. In particular, reflection photomasks include a substrate and a reflection layer having multiple sets of alternating films of first and second materials, on the substrate. A buffer layer including at least one Group VIII metal is provided on the reflection layer opposite the substrate. An absorber pattern including material that is patterned in a pattern and that is configured to absorb extreme ultraviolet rays, is provided on the buffer layer opposite the reflection layer. The at least one Group VIII metal preferably is Ru. At least a portion of the Ru buffer layer may be less than about 3 nm thick. Alternatively, the Group VIII metal can include Pt, Ir and/or Pd.
    Type: Application
    Filed: October 12, 2001
    Publication date: April 18, 2002
    Inventors: Byoung-taek Lee, Taro Ogawa, Biichi Hoshino