Abstract: A process for assembling a package for a semiconductor device comprising reducing the stress in an inner dielectric layer during packaging by heating the die and the substrate to a temperature where a solder reflows, dropping to a temperature where a selected epoxy will cure, liquefying the epoxy, adding the liquefied epoxy to the die and substrate, and maintaining the die and substrate at a temperature where the epoxy cures for a selected amount of time.

Abstract: A process for assembling a package for a semiconductor device comprising reducing the stress in an inner dielectric layer during packaging by heating the die and the substrate to a temperature where a solder reflows, dropping to a temperature where a selected epoxy will cure, liquefying the epoxy, adding the liquefied epoxy to the die and substrate, and maintaining the die and substrate at a temperature where the epoxy cures for a selected amount of time.

Abstract: Embodiments of a method of attaching an integrated circuit (IC) die to a substrate are disclosed. In one embodiment, at a first temperature, a solder disposed between the IC die and substrate is reflowed. The reflowed solder is allowed to solidify to form electrical connections between the IC die and substrate. At a second temperature less than the first temperature, a liquid curable underfill material is placed in a gap between the IC die and substrate, and this underfill material may be placed in the gap, at least in part, by capillary action. The second temperature is maintained while curing the underfill material, and this second temperature is below a melting temperature of the solidified solder. Other embodiments are described and claimed.

Abstract: An integrated circuit package may include a plurality of interconnects, and an integrated package substrate coupled to the plurality of interconnects and comprising an integrated circuit package substrate core. A first surface of the integrated circuit package substrate core may define a depression.

Abstract: An integrated circuit package may include a plurality of interconnects, and an integrated package substrate coupled to the plurality of interconnects and comprising an integrated circuit package substrate core. A first surface of the integrated circuit package substrate core may define a depression.

Abstract: An integrated circuit package may include a plurality of interconnects, and an integrated package substrate coupled to the plurality of interconnects and comprising an integrated circuit package substrate core. A first surface of the integrated circuit package substrate core may define a depression.

Abstract: A process for assembling a package for a semiconductor device comprising reducing the stress in an inner dielectric layer during packaging by heating the die and the substrate to a temperature where a solder reflows, dropping to a temperature where a selected epoxy will cure, liquefying the epoxy, adding the liquefied epoxy to the die and substrate, and maintaining the die and substrate at a temperature where the epoxy cures for a selected amount of time.

Abstract: A process for assembling a package for a semiconductor device is described. The process includes reducing the stress in an inner dielectric layer during packaging by heating the die and the substrate to a temperature where a solder reflows, dropping to a temperature where a selected epoxy will cure, liquefying the epoxy, adding the liquefied epoxy to the die and substrate, and maintaining the die and substrate at a temperature where the epoxy cures for a selected amount of time.

Abstract: A process for assembling a package for a semiconductor device comprising reducing the stress in an inner dielectric layer during packaging by heating the die and the substrate to a temperature where a solder reflows, dropping to a temperature where a selected epoxy will cure, liquefying the epoxy, adding the liquefied epoxy to the die and substrate, and maintaining the die and substrate at a temperature where the epoxy cures for a selected amount of time.

Abstract: A microelectronic assembly including a plurality of conductive columns extending from a bond pad of a microelectronic device and a conductive adhesive on a land pad of a carrier substrate electrically attached to the conductive columns.

Abstract: An integrated circuit package may include a plurality of interconnects, and an integrated package substrate coupled to the plurality of interconnects and comprising an integrated circuit package substrate core. A first surface of the integrated circuit package substrate core may define a depression.

Abstract: A method of packaging a die includes reflowing the solder to electrically connect the die to a substrate at a first temperature, cooling the die and substrate to a second temperature, and placing a heated epoxy in contact with the die and the substrate. The method also includes holding the die and substrate at the second temperature for a time sufficient to allow the epoxy to cure, and cooling the die, substrate and epoxy. The second temperature is less than the first temperature. In addition, the die and substrate are not cooled to a temperature significantly below the second temperature until after the heated epoxy is placed in contact with the die and substrate.

Abstract: A chip-join process to reduce elongation mismatch between the adherents involves thermally expanding each of a coefficient of thermal expansion mismatched semiconductor chip and substrate a substantially equal amount from their room temperature state in a direction along surfaces thereof to be joined by soldering. The thermally expanded semiconductor chip and substrate are then soldered to one another forming a plurality of soldered joints, and then cooled to room temperature. The process enables elongation mismatch from soldering to be reduced to less than half that expected based up cooling the substrate and semiconductor chip from the solder solidification temperature following soldering, thereby reducing post soldering residual stress, residual plastic deformation in the soldered joints, residual plastic deformation in the substrate, and semiconductor chip warpage.

Abstract: A low resistance package-to-die interconnect scheme for reduced die stresses includes a relatively low melting temperature and yield strength solder on the die and a relatively higher melting temperature and electrically conductive material such as copper on the substrate. A soldered joint connects the solder to the electrically conductive material to couple/connect the die and substrate to one another. The soldered joint is formed by heating the die and solder thereon to at least the melting temperature of the solder and thereafter contacting the molten solder with the conductive material on the substrate, which is at a substantially lower temperature for minimizing residual stress from soldering due to coefficient of thermal expansion mismatch between the substrate and die.

Abstract: A microelectronic assembly including a plurality of conductive columns extending from a bond pad of a microelectronic device and a conductive adhesive on a land pad of a carrier substrate electrically attached to the conductive columns.

Abstract: A microelectronic device and methods of fabricating the same comprising a microelectronic die having an active surface, a back surface, and at least one side. The microelectronic die side comprises a trench sidewall, a lip and a channel sidewall. A metallization layer is disposed on the microelectronic die back surface and the trench sidewall.

Abstract: A method of packaging a die includes reflowing the solder to electrically connect the die to a substrate at a first temperature, cooling the die and substrate to a second temperature, and placing a heated epoxy in contact with the die and the substrate. The method also includes holding the die and substrate at the second temperature for a time sufficient to allow the epoxy to cure, and cooling the die, substrate and epoxy. The second temperature is less than the first temperature. In addition, the die and substrate are not cooled to a temperature significantly below the second temperature until after the heated epoxy is placed in contact with the die and substrate.

Abstract: A microelectronic device and methods of fabricating the same comprising a microelectronic die having an active surface, a back surface, and at least one side. The microelectronic die side comprises a beveled sidewall and a channel sidewall. A metallization layer is disposed on the microelectronic die back surface and the beveled sidewall.

Abstract: A microelectronic assembly including a plurality of conductive columns extending from a bond pad of a microelectronic device and a conductive adhesive on a land pad of a carrier substrate electrically attached to the conductive columns.

Abstract: A method of packaging a die includes reflowing the solder to electrically connect the die to a substrate at a first temperature, cooling the die and substrate to a second temperature, and placing a heated epoxy in contact with the die and the substrate. The method also includes holding the die and substrate at the second temperature for a time sufficient to allow the epoxy to cure, and cooling the die, substrate and epoxy. The second temperature is less than the first temperature. In addition, the die and substrate are not cooled to a temperature significantly below the second temperature until after the heated epoxy is placed in contact with the die and substrate.