Abstract: A system and method for forming an isolation trench is provided. An embodiment comprises forming a trench and then lining the trench with a dielectric liner. Prior to etching the dielectric liner, an outgassing process is utilized to remove any residual precursor material that may be left over from the deposition of the dielectric liner. After the outgassing process, the dielectric liner may be etched, and the trench may be filled with a dielectric material.

Abstract: A method for fabricating a display panel is provided. The method includes steps of: disposing a seal on a first substrate, in which a first side of the seal connects in approximately perpendicular to a second side of the seal and has at least one liquid crystal inlet; forming at least one block on the first substrate and between the liquid crystal inlet and the connection of the first side and the second side of the seal, in which there is a space between the block and the first side of the seal when the block is formed; and pressing a second substrate against the first substrate having the seal and the block thereon, such that the block adjoins the first side of the seal after the second substrate is pressed.

Abstract: A liquid crystal display apparatus includes a liquid crystal panel and a panel driving device. The panel driving device includes a timing control circuit, a gate driving circuit, and a source driving circuit. The source driving circuit includes a low voltage differential signal (LVDS) receiver, a driving voltage generator, and a controller. The LVDS receiver includes a plurality of receive circuits and a power saving control circuit. Each of the receive circuit performs level conversion upon a data LVDS to generate a logic signal, and operates in a selected one of a normal energy consuming mode and a power saving mode. The power saving control circuit controls the receive circuits to operate in the power saving mode when the power saving control circuit does not receive a power adjustment signal from the controller.

Abstract: The present disclosure provides a method of chamber match. The method includes identifying a golden chamber designed operable to implement a semiconductor process; identifying a reference chamber designed operable for the semiconductor process; and extracting a matching index of a processing chamber relative to the golden chamber and the reference chamber using a dynamic variable analysis.

Abstract: A system and method for forming an isolation trench is provided. An embodiment comprises forming a trench and then lining the trench with a dielectric liner. Prior to etching the dielectric liner, an outgassing process is utilized to remove any residual precursor material that may be left over from the deposition of the dielectric liner. After the outgassing process, the dielectric liner may be etched, and the trench may be filled with a dielectric material.

Abstract: A method for fabricating a display panel is provided. The method includes steps of: disposing a seal on a first substrate, in which a first side of the seal connects in approximately perpendicular to a second side of the seal and has at least one liquid crystal inlet; forming at least one block on the first substrate and between the liquid crystal inlet and the connection of the first side and the second side of the seal, in which there is a space between the block and the first side of the seal when the block is formed; and pressing a second substrate against the first substrate having the seal and the block thereon, such that the block adjoins the first side of the seal after the second substrate is pressed.

Abstract: A display panel includes a first substrate, a second substrate, a seal and at least one block. The second substrate is disposed opposite to the first substrate. The seal is disposed between the first substrate and the second substrate and has a first side and a second side. The first side has at least one liquid crystal inlet and connects in approximately perpendicular to the second side. The block is disposed between the first substrate and the second substrate and adjoins the first side of the seal. The block is disposed between the liquid crystal inlet and the connection of the first side and the second side. A method for fabricating a display panel is also disclosed herein.

Abstract: The present disclosure provides a method of chamber match. The method includes identifying a golden chamber designed operable to implement a semiconductor process; identifying a reference chamber designed operable for the semiconductor process; and extracting a matching index of a processing chamber relative to the golden chamber and the reference chamber using a dynamic variable analysis.

Abstract: A method of determining a temperature in a deposition reactor includes the steps of depositing a first epitaxial layer of silicon germanium on a substrate, depositing a second epitaxial layer of silicon above the first epitaxial layer, measuring the thickness of the second epitaxial layer and determining the temperature in the deposition reactor using the measured thickness of the second epitaxial layer. The method may also include heating the deposition reactor to approximately a predetermined temperature using a heating device and a temperature measuring device and generating a signal indicative of a temperature within the deposition reactor. The method may also contain the steps of comparing the measured thickness with a predetermined thickness of the second epitaxial layer corresponding to the predetermined temperature and determining the temperature in the deposition reactor using the measured thickness of the second epitaxial layer and the predetermined thickness of the second epitaxial layer.

Abstract: A display panel includes a first substrate, a second substrate, a seal and at least one block. The second substrate is disposed opposite to the first substrate. The seal is disposed between the first substrate and the second substrate and has a first side and a second side. The first side has at least one liquid crystal inlet and connects in approximately perpendicular to the second side. The block is disposed between the first substrate and the second substrate and adjoins the first side of the seal. The block is disposed between the liquid crystal inlet and the connection of the first side and the second side.

Abstract: A semiconductor manufacturing information framework to operate a processing tool includes a data acquisition system (DAS), a virtual metrology (VM) system, a fault detection and classification (FDC) system and an advanced process control (APC) system. The DAS is operable to receive data related to the processing of a workpiece by the processing tool or sensors coupled on tool. The VM system is operable to receive the data from the DAS and predict results of the workpiece processed by the processing tool or sensors. The VM system generates at least one first output indicative of the results. The FDC system is operable to receive the data and generate at least one second output indicative of an operating status of the processing tool. The APC system is operable to receive the at least one first or second outputs, and, in response, generate at least one third output to control the processing tool.

Abstract: A continuous liquid delivery system which includes at least one primary filter and at least one secondary filter for alternatively receiving a liquid such as a CMP polishing slurry. A primary backwash circuit is provided in fluid communication with each primary filter for backwashing of the primary filter. At least one secondary backwash circuit is provided in fluid communication with each secondary filter for backwashing of the secondary filter. As the liquid is distributed through the primary filter or filters, the secondary filter or filters can be backwashed, and vice-versa to facilitate a continuous flow of the liquid from a source to a destination.

Abstract: A semiconductor device manufacturing system including a processing subsystem and a compensation thermal subsystem. The processing subsystem includes a process chamber and a thermal control subsystem having a processing subsystem heating element and configured to generate a process chamber temperature profile. The compensation thermal subsystem includes a temperature sensor configured to detect the process chamber temperature profile, a compensation thermal control unit (CTCU) configured to determine variation between the process chamber temperature profile and a desired temperature profile, and a compensation heating element configured to alter the process chamber temperature profile in response to the variation detected by the CTCU.

Abstract: Uniform spatial distribution of plasma over the face of a semiconductor wafer is achieved using a multi-zone electrode forming part of an electrostatic chuck used to hold the wafer in a processing chamber. The electrode includes a plurality of concentric electrode portions to which differing RF bias voltages may be applied to produce an electric field having a desired spatial distribution. Sensors are used to monitor either the spatial distribution of the plasma or the process effects of the plasma, and the sensed information is fed back to a controller that adjusts the bias voltage on the electrode portions in a manner to maintain the spatial uniformity of the plasma.

Abstract: A plasma generator comprises an ICP chamber and a surface wave conducting device. The upper wall of the ICP chamber is a quartz plate, and an electrode inside the lower ICP chamber is coupled with a RF bias supply. The ICP chamber is used to produce a first plasma. The surface wave conducting device is located on the quartz plate. The surface wave conducting device can make a microwave become a standing microwave, then a second plasma excited by the standing microwave is produced in the upper ICP chamber. Then, the first plasma and the second plasma are mixed in the ICP chamber.