Patents by Inventor Björn Muermann
Björn Muermann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230231080Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.Type: ApplicationFiled: March 17, 2023Publication date: July 20, 2023Inventors: Fabian Kopp, Attila Molnar, Bjoern Muermann, Franz Eberhard
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Patent number: 11631783Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer containing a dielectric material, wherein the insulation layer is arranged in pType: GrantFiled: September 21, 2021Date of Patent: April 18, 2023Assignee: OSRAM OLED GMBHInventors: Fabian Kopp, Attila Molnar, Bjoern Muermann, Franz Eberhard
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Patent number: 11367808Abstract: A radiation-emitting semiconductor chip includes a semiconductor body; a first contact layer having a first contact surface for external electrical contacting of the semiconductor chip and a first contact web structure connected to the first contact surface, wherein the first contact web structure is a region of the first contact layer that, compared to the first contact surface, has a comparatively small extent at least in a lateral direction; a second contact layer, wherein first and second contact web structures overlap in places in plan view of the semiconductor chip; a current distribution layer; and an insulation layer having a plurality of openings into which the current distribution layer extends.Type: GrantFiled: December 11, 2018Date of Patent: June 21, 2022Assignee: OSRAM OLED GmbHInventors: Fabian Kopp, Franz Eberhard, Björn Muermann, Attila Molnar
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Publication number: 20220005974Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer containing a dielectric material, wherein the insulation layer is arranged in pType: ApplicationFiled: September 21, 2021Publication date: January 6, 2022Inventors: Fabian Kopp, Attila Molnar, Bjoern Muermann, Franz Eberhard
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Patent number: 11164994Abstract: A radiation-emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor body configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening.Type: GrantFiled: June 26, 2017Date of Patent: November 2, 2021Assignee: OSRAM OLED GMBHInventors: Fabian Kopp, Attila Molnar, Bjoern Muermann, Franz Eberhard
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Publication number: 20190326471Abstract: A radiation-emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor body configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening.Type: ApplicationFiled: June 26, 2017Publication date: October 24, 2019Inventors: Fabian Kopp, Attila Molnar, Bjoern Muermann, Franz Eberhard
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Patent number: 10374131Abstract: The invention relates to an optoelectronic component. The component includes a semiconductor layer sequence having an active layer that is designed to emit electromagnetic radiation during operation of the component, at least one current-spreading layer on a radiation outlet surface of the semiconductor layer sequence, wherein the current-spreading layer is connected to a contact structure in an electrically conductive manner by means of an adhesion layer. The adhesion layer comprises a titanium oxide, wherein in the titanium oxide the oxygen has the oxidation state W0, with W0=?2, and the titanium has the oxidation state WT, with 0 <WT<+4.Type: GrantFiled: August 3, 2016Date of Patent: August 6, 2019Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Julian Ikonomov, Martin Lemberger, Bjoern Muermann
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Publication number: 20190181299Abstract: A radiation-emitting semiconductor chip includes a semiconductor body having an active region that generates radiation; a first contact layer having a first contact surface and a first contact web structure connected to the first contact surface; a second contact layer having a second contact surface and a second contact web structure connected to the second contact surface, wherein the first contact web structure and the second contact web structure overlap in places in plan view of the semiconductor chip; a current distribution layer through which the first semiconductor layer electrically conductively connects to the first contact layer; and an insulation layer containing a dielectric material, wherein the insulation layer is arranged between the first semiconductor layer and the current distribution layer and has a plurality of openings into which the current distribution layer extends, and a diameter of the openings is 1 ?m to 20 ?m.Type: ApplicationFiled: December 11, 2018Publication date: June 13, 2019Inventors: Fabian Kopp, Franz Eberhard, Björn Muermann, Attila Molnar
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Publication number: 20180219132Abstract: The invention relates to an optoelectronic component. The component comprises a semiconductor layer sequence having an active layer that is designed to emit electromagnetic radiation during operation of the component, at least one current-spreading layer on a radiation outlet surface of the semiconductor layer sequence, wherein the current-spreading layer is connected to a contact structure in an electrically conductive manner by means of an adhesion layer. The adhesion layer comprises a titanium oxide, wherein in the titanium oxide the oxygen has the oxidation state WO, with WO=?2, and the titanium has the oxidation state WT, with 0<WT<+4.Type: ApplicationFiled: August 3, 2016Publication date: August 2, 2018Inventors: Julian IKONOMOV, Martin LEMBERGER, Bjoern MUERMANN
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Patent number: 9917229Abstract: An electrical contact structure (10) for a semiconductor component (100) is specified, comprising a transparent electrically conductive contact layer (1), on which a first metallic contact layer (2) is applied, a second metallic contact layer (3), which completely covers the first metallic contact layer (2), and a separating layer (4), which is arranged between the transparent electrically conductive contact layer (1) and the second metallic contact layer (3) and which separates the second metallic contact layer (3) from the transparent electrically conductive contact layer (1). Furthermore, a semiconductor component (100) comprising a contact structure (10) is specified.Type: GrantFiled: May 22, 2015Date of Patent: March 13, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Korbinian Perzlmaier, Bjoern Muermann, Karl Engl, Christian Eichinger
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Patent number: 9859463Abstract: An optoelectronic semiconductor device has a semiconductor body including a semiconductor layer sequence with an active region that generates radiation, a semiconductor layer and a further semiconductor layer, wherein the active region is arranged between the semiconductor layer and the further semiconductor layer, a current spreading layer is arranged on a radiation exit face of the semiconductor body, the current spreading layer connects electrically conductively with a contact structure for external electrical contacting of the semiconductor layer, in a plan view of the semiconductor device the current spreading layer adjoins the semiconductor layer in a connection region, and the current spreading layer includes a patterning with a plurality of recesses through which radiation exits the semiconductor device during operation.Type: GrantFiled: May 29, 2015Date of Patent: January 2, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Korbinian Perzlmaier, Fabian Kopp, Christian Eichinger, Björn Muermann
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Publication number: 20170200860Abstract: An electrical contact structure (10) for a semiconductor component (100) is specified, comprising a transparent electrically conductive contact layer (1), on which a first metallic contact layer (2) is applied, a second metallic contact layer (3), which completely covers the first metallic contact layer (2), and a separating layer (4), which is arranged between the transparent electrically conductive contact layer (1) and the second metallic contact layer (3) and which separates the second metallic contact layer (3) from the transparent electrically conductive contact layer (1). Furthermore, a semiconductor component (100) comprising a contact structure (10) is specified.Type: ApplicationFiled: May 22, 2015Publication date: July 13, 2017Inventors: Korbinian PERZLMAIER, Bjoern MUERMANN, Karl ENGL, Christian EICHINGER
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Publication number: 20170092808Abstract: An optoelectronic semiconductor device has a semiconductor body including a semiconductor layer sequence with an active region that generates radiation, a semiconductor layer and a further semiconductor layer, wherein the active region is arranged between the semiconductor layer and the further semiconductor layer, a current spreading layer is arranged on a radiation exit face of the semiconductor body, the current spreading layer connects electrically conductively with a contact structure for external electrical contacting of the semiconductor layer, in a plan view of the semiconductor device the current spreading layer adjoins the semiconductor layer in a connection region, and the current spreading layer includes a patterning with a plurality of recesses through which radiation exits the semiconductor device during operation.Type: ApplicationFiled: May 29, 2015Publication date: March 30, 2017Inventors: Korbinian Perzlmaier, Fabian Kopp, Christian Eichinger, Björn Muermann