Patents by Inventor Bo-Yen Shen

Bo-Yen Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210005812
    Abstract: An RRAM structure and its manufacturing method are provided. The RRAM structure includes a bottom electrode layer, a resistance switching layer, and an implantation control layer sequentially formed on a substrate. The resistance switching layer includes a conductive filament confined region and an outer region surrounding the conductive filament confined region. The RRAM structure includes a protective layer and a top electrode layer. The protective layer conformally covers the bottom electrode layer, the resistance switching layer, and the implantation control layer and has a first opening. The top electrode layer is located on the implantation control layer, and a portion of the top electrode layer is filled into the first opening. The position of the top electrode layer corresponds to that of the conductive filament confined region, and the top surface of the top electrode layer is higher than that of the protective layer.
    Type: Application
    Filed: June 26, 2020
    Publication date: January 7, 2021
    Inventors: Bo-Lun WU, Po-Yen HSU, Ting-Ying SHEN, Meng-Hung LIN
  • Publication number: 20200381620
    Abstract: A resistive random access memory structure includes a semiconductor substrate, a transistor, a bottom electrode, a plurality of top electrodes, and a resistive-switching layer. The transistor is disposed over the semiconductor substrate. The bottom electrode is disposed over the semiconductor substrate and is electrically connected to a drain region of the transistor. The plurality of top electrodes is disposed along a sidewall of the bottom electrode. The resistance-switching layer is disposed between the bottom electrode and the plurality of top electrodes.
    Type: Application
    Filed: May 31, 2019
    Publication date: December 3, 2020
    Inventors: Bo-Lun WU, Yi-Hsiu CHEN, Ting-Ying SHEN, Po-Yen HSU
  • Publication number: 20200321521
    Abstract: A resistive random access memory (RRAM) and its manufacturing method are provided. The RRAM includes a substrate having an array region and a peripheral region. A plurality of memory cells and a gap-filling dielectric layer overlying the memory cells are located on the substrate and in the array region. A buffer layer only in the array region covers the gap-filling dielectric layer, and its material layer is different from that of the gap-filling dielectric layer. A first low-k dielectric layer is only located in the peripheral region, and its material is different from that of the buffer layer. A dielectric constant of the first low-k dielectric layer is less than 3. A top surface of the first low-k dielectric layer is coplanar with that of the buffer layer. A first conductive plug passes through the buffer layer and the gap-filling dielectric layer and contacts one of the memory cells.
    Type: Application
    Filed: April 3, 2020
    Publication date: October 8, 2020
    Inventors: Po-Yen HSU, Bo-Lun WU, Ting-Ying SHEN
  • Patent number: 10593877
    Abstract: A resistive random access memory is provided. The resistive random access memory includes a bottom electrode over a substrate, a top electrode, a resistance-switching layer, an oxygen exchange layer, and a sidewall protective layer. The top electrode is disposed over the bottom electrode. The resistance-switching layer is disposed between the bottom electrode and the top electrode. The oxygen exchange layer is disposed between the resistance-switching layer and the top electrode. The sidewall protective layer containing metal or semiconductor is disposed at sidewalls of the resistance-switching layer, and the sidewalls of the resistance-switching layer is doped with the metal or semiconductor from the sidewall protective layer.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: March 17, 2020
    Assignee: Winbond Electronics Corp.
    Inventors: Frederick Chen, Ping-Kun Wang, Shao-Ching Liao, Po-Yen Hsu, Yi-Hsiu Chen, Ting-Ying Shen, Bo-Lun Wu, Meng-Hung Lin, Chia-Hua Ho, Ming-Che Lin
  • Patent number: D849699
    Type: Grant
    Filed: May 21, 2018
    Date of Patent: May 28, 2019
    Assignee: TIMOTION TECHNOLOGY CO., LTD.
    Inventor: Bo-Yen Shen
  • Patent number: D851603
    Type: Grant
    Filed: April 5, 2018
    Date of Patent: June 18, 2019
    Assignee: TIMOTION TECHNOLOGY CO., LTD.
    Inventor: Bo-Yen Shen
  • Patent number: D852148
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: June 25, 2019
    Assignee: TIMOTION TECHNOLOGY CO., LTD.
    Inventor: Bo-Yen Shen
  • Patent number: D864268
    Type: Grant
    Filed: September 1, 2018
    Date of Patent: October 22, 2019
    Assignee: TIMOTION TECHNOLOGY CO., LTD.
    Inventor: Bo-Yen Shen
  • Patent number: D869403
    Type: Grant
    Filed: May 11, 2018
    Date of Patent: December 10, 2019
    Assignee: TIMOTION TECHNOLOGY CO., LTD.
    Inventor: Bo-Yen Shen
  • Patent number: D879054
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: March 24, 2020
    Assignee: TIMOTION TECHNOLOGY CO., LTD.
    Inventor: Bo-Yen Shen
  • Patent number: D879727
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: March 31, 2020
    Assignee: TIMOTION TECHNOLOGY CO., LTD.
    Inventor: Bo-Yen Shen
  • Patent number: D884686
    Type: Grant
    Filed: January 3, 2019
    Date of Patent: May 19, 2020
    Assignee: TIMOTION TECHNOLOGY CO., LTD.
    Inventor: Bo-Yen Shen
  • Patent number: D894843
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: September 1, 2020
    Assignee: TIMOTION TECHNOLOGY CO., LTD.
    Inventor: Bo-Yen Shen
  • Patent number: D899428
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: October 20, 2020
    Assignee: TIMOTION TECHNOLOGY CO., LTD.
    Inventor: Bo-Yen Shen