Abstract: Provided is a sapphire single crystal heat treatment method comprising the steps of: charging a sapphire single crystal into a chamber; raising the temperature in the chamber to a target temperature by heating the chamber; holding the temperature in the chamber at a constant temperature; and cooling the inside of the chamber to room temperature, wherein the temperature raising step comprises: a first temperature raising step of raising the temperature to a first set temperature at a temperature raising rate of 4° C./min to 5° C./min; and a second temperature raising step of raising the temperature to a second set temperature at a temperature raising rate of 1° C./min or less after the first temperature raising step has been completed. The temperature raising process is executed in a multi-stage, to reduce the temperature raising time and prevent a sapphire single crystal from being affected by heat.

Abstract: Provided is a sapphire single crystal heat treatment method comprising the steps of: charging a sapphire single crystal into a chamber; raising the temperature in the chamber to a target temperature by heating the chamber; holding the temperature in the chamber at a constant temperature; and cooling the inside of the chamber to room temperature, wherein the temperature raising step comprises: a first temperature raising step of raising the temperature to a first set temperature at a temperature raising rate of 4° C./min to 5° C./min; and a second temperature raising step of raising the temperature to a second set temperature at a temperature raising rate of 1° C./min or less after the first temperature raising step has been completed. The temperature raising process is executed in a multi-stage, to reduce the temperature raising time and prevent a sapphire single crystal from being affected by heat.