Patents by Inventor Bon-Woong Koo

Bon-Woong Koo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11450504
    Abstract: A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam.
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: September 20, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Ajdin Sarajlic, Ronald Johnson, Nunzio V. Carbone, Peter Ewing, Mervyn Deegan
  • Patent number: 11424097
    Abstract: Provided herein are approaches for increasing efficiency of ion sources. In some embodiments, an apparatus, such as an ion source, may include a chamber housing having a first end wall and a second end wall, and an extraction plate coupled to at least one of the first end wall and the second end wall. The extraction plate may include an extraction aperture. The apparatus may further include a tubular cathode extending between the first end wall and the second end wall.
    Type: Grant
    Filed: July 8, 2020
    Date of Patent: August 23, 2022
    Assignee: APPLIED Materials, Inc.
    Inventors: Bon-Woong Koo, Svetlana Radovanov, Frank Sinclair, You Chia Li, Peter Ewing, Ajdin Sarajlic, Christopher A. Rowland, Nunzio Carbone
  • Publication number: 20220037114
    Abstract: A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.
    Type: Application
    Filed: June 18, 2021
    Publication date: February 3, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Thomas Stacy, Jay T. Scheuer, Eric D. Hermanson, Bon-Woong Koo, Tseh-Jen Hsieh
  • Publication number: 20210383995
    Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having an opening formed in a front half thereof nearest the extraction aperture, wherein a rear half of the tubular cathode furthest from the extraction aperture is closed.
    Type: Application
    Filed: August 20, 2021
    Publication date: December 9, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
  • Patent number: 11127557
    Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: September 21, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
  • Publication number: 20210287872
    Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.
    Type: Application
    Filed: March 12, 2020
    Publication date: September 16, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
  • Patent number: 11114277
    Abstract: An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.
    Type: Grant
    Filed: June 3, 2020
    Date of Patent: September 7, 2021
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Jun Lu, Frank Sinclair, Eric D. Hermanson, Joseph E. Pierro, Michael D. Johnson, Michael S. DeLucia, Antonella Cucchetti
  • Patent number: 11049691
    Abstract: A system and method for optimizing a ribbon ion beam in a beam line implantation system is disclosed. The system includes a mass resolving apparatus having a resolving aperture, in which the resolving aperture may be moved in the X and Z directions. Additionally, a controller is able to manipulate the mass analyzer and quadrupole lenses so that the crossover point of desired ions can also be moved in the X and Z directions. By manipulating the crossover point and the resolving aperture, the parameters of the ribbon ion beam may be manipulated to achieve a desired result. Movement of the crossover point in the X direction may affect the mean horizontal angle of the beamlets, while movement of the crossover point in the Z direction may affect the horizontal angular spread and beam current.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: June 29, 2021
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Robert C. Lindberg, Eric D. Hermanson, Frank Sinclair, Antonella Cucchetti, Randy Martin, Michael D. Johnson, Ana Samolov, Svetlana B. Radovanov
  • Publication number: 20210134569
    Abstract: An ion source having an electrically isolated extraction plate is disclosed. By isolating the extraction plate, a different voltage can be applied to the extraction plate than to the body of the arc chamber. By applying a more positive voltage to the extraction plate, more efficient ion source operation with higher plasma density can be achieved. In this mode the plasma potential is increased, and the electrostatic sheath reduces losses of electrons to the chamber walls. By applying a more negative voltage, an ion rich sheath adjacent to the extraction aperture can be created. In this mode, conditioning and cleaning of the extraction plate is achieved via ion bombardment. Further, in certain embodiments, the voltage applied to the extraction plate can be pulsed to allow ion extraction and cleaning to occur simultaneously.
    Type: Application
    Filed: January 15, 2021
    Publication date: May 6, 2021
    Inventors: Svetlana B. Radovanov, Bon-Woong Koo, Alexandre Likhanskii
  • Patent number: 10923309
    Abstract: A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam.
    Type: Grant
    Filed: November 1, 2018
    Date of Patent: February 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Ajdin Sarajlic, Ronald Johnson, Nunzio V. Carbone, Peter Ewing, Mervyn Deegan
  • Patent number: 10923306
    Abstract: An indirectly heated cathode ion source having an electrically isolated extraction plate is disclosed. By isolating the extraction plate, a different voltage can be applied to the extraction plate than to the body of the arc chamber. By applying a more positive voltage to the extraction plate, more efficient ion source operation with higher plasma density can be achieved. In this mode the plasma potential is increased, and the electrostatic sheath reduces losses of electrons to the chamber walls. By applying a more negative voltage, an ion rich sheath adjacent to the extraction aperture can be created. In this mode, conditioning and cleaning of the extraction plate is achieved via ion bombardment. Further, in certain embodiments, the voltage applied to the extraction plate can be pulsed to allow ion extraction and cleaning to occur simultaneously.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: February 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Svetlana B. Radovanov, Bon-Woong Koo, Alexandre Likhanskii
  • Publication number: 20210005416
    Abstract: A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam.
    Type: Application
    Filed: September 17, 2020
    Publication date: January 7, 2021
    Inventors: Bon-Woong Koo, Ajdin Sarajlic, Ronald Johnson, Nunzio V. Carbone, Peter Ewing, Mervyn Deegan
  • Patent number: 10825653
    Abstract: A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: November 3, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: John W. Graff, Bon-Woong Koo, John A. Frontiero, Nicholas P. T. Bateman, Timothy J. Miller, Vikram M. Bholse
  • Publication number: 20200343071
    Abstract: Provided herein are approaches for increasing efficiency of ion sources. In some embodiments, an apparatus, such as an ion source, may include a chamber housing having a first end wall and a second end wall, and an extraction plate coupled to at least one of the first end wall and the second end wall. The extraction plate may include an extraction aperture. The apparatus may further include a tubular cathode extending between the first end wall and the second end wall.
    Type: Application
    Filed: July 8, 2020
    Publication date: October 29, 2020
    Applicant: APPLIED Materials, Inc.
    Inventors: Bon-Woong Koo, Svetlana Radovanov, Frank Sinclair, You Chia Li, Peter Ewing, Ajdin Sarajlic, Christopher A. Rowland, Nunzio Carbone
  • Patent number: 10804075
    Abstract: A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane.
    Type: Grant
    Filed: November 14, 2016
    Date of Patent: October 13, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: John W. Graff, Bon-Woong Koo, John A. Frontiero, Nicholas P T Bateman, Timothy J. Miller, Vikram M. Bhosle
  • Publication number: 20200294765
    Abstract: An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.
    Type: Application
    Filed: June 3, 2020
    Publication date: September 17, 2020
    Inventors: Bon-Woong Koo, Jun Lu, Frank Sinclair, Eric D. Hermanson, Joseph E. Pierro, Michael D. Johnson, Michael S. DeLucia, Antonella Cucchetti
  • Publication number: 20200294750
    Abstract: An indirectly heated cathode ion source having an electrically isolated extraction plate is disclosed. By isolating the extraction plate, a different voltage can be applied to the extraction plate than to the body of the arc chamber. By applying a more positive voltage to the extraction plate, more efficient ion source operation with higher plasma density can be achieved. In this mode the plasma potential is increased, and the electrostatic sheath reduces losses of electrons to the chamber walls. By applying a more negative voltage, an ion rich sheath adjacent to the extraction aperture can be created. In this mode, conditioning and cleaning of the extraction plate is achieved via ion bombardment. Further, in certain embodiments, the voltage applied to the extraction plate can be pulsed to allow ion extraction and cleaning to occur simultaneously.
    Type: Application
    Filed: March 13, 2019
    Publication date: September 17, 2020
    Inventors: Svetlana B. Radovanov, Bon-Woong Koo, Alexandre Likhanskii
  • Patent number: 10748738
    Abstract: Provided herein are approaches for increasing efficiency of ion sources. In some embodiments, an apparatus, such as an ion source, may include a chamber housing having a first end wall and a second end wall, and an extraction plate coupled to at least one of the first end wall and the second end wall. The extraction plate may include an extraction aperture. The apparatus may further include a tubular cathode extending between the first end wall and the second end wall.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: August 18, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Svetlana Radovanov, Frank Sinclair, You Chia Li, Peter Ewing, Ajdin Sarajlic, Christopher A. Rowland, Nunzio Carbone
  • Patent number: 10741361
    Abstract: An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: August 11, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Jun Lu, Frank Sinclair, Eric D. Hermanson, Joseph E. Pierro, Michael D. Johnson, Michael S. DeLucia, Antonella Cucchetti
  • Publication number: 20200144018
    Abstract: A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam.
    Type: Application
    Filed: November 1, 2018
    Publication date: May 7, 2020
    Inventors: Bon-Woong Koo, Ajdin Sarajlic, Ronald Johnson, Nunzio V. Carbone, Peter Ewing, Mervyn Deegan