Patents by Inventor Bonnie A. Baumgratz

Bonnie A. Baumgratz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5581084
    Abstract: An array of dual-band HgCdTe radiation detectors (10) wherein individual detectors include a first layer (14) having a first type of electrical conductivity and a bandgap selected for absorbing radiation within a first spectral band. The radiation detectors also each include a second layer (16) overlying the first layer. The second layer has a second type of electrical conductivity that is opposite the first type of electrical conductivity. Each radiation detector further includes a third layer (18) overlying the second layer, the third layer having the first type of electrical conductivity and a bandgap selected for absorbing radiation within a second spectral band. The first and second spectral bands are selected from SWIR, MWIR, LWIR, and VLWIR. The first, second and third layers are contained within at least one mesa structure (10a, 10b) that supports on a top surface thereof a first electrical contact (24) to the first layer and a second electrical contact (28) to the third layer.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: December 3, 1996
    Assignee: Santa Barbara Research Center
    Inventors: George R. Chapman, Bonnie A. Baumgratz, Michael Ray
  • Patent number: 5559336
    Abstract: A radiation detector (1) unit cell (10) includes an n-p+ LWIR photodiode that is vertically integrated with a p+-n MWIR photodiode in a n-p+-n structure. Electrical contact is made separately to each of these layers in order to simultaneously detect both the LWIR and MWIR bands. The electrical contact is made via indium bump interconnections (23, 25, 27) enabling the unit cell to be subsequently hybridized with a topside mounted electronic readout integrated circuit (30). The n-p+-n structure in a given pixel of an array of radiation detector pixels is electrically isolated from all neighboring pixels by a trench (28) that is etched into an underlying substrate (12). To compensate for a reduction in the optically sensitive area due to the placement of the electrical contacts and the presence of the pixel isolation trench, a microlens (34) may be provided within, upon, or adjacent to the backside, radiation receiving surface of the substrate in registration with the unit cell.
    Type: Grant
    Filed: July 5, 1994
    Date of Patent: September 24, 1996
    Assignee: Santa Barbara Research Center
    Inventors: Kenneth Kosai, Jerry A. Wilson, Bonnie A. Baumgratz
  • Patent number: 5086328
    Abstract: A method is disclosed for passivating infrared detector arrays 50. A wafer 48 of indium antimonide (InSb) is subjected an anodization process while being illuminated by a bright incandescent lamp 66. In one embodiment, the photo-anodized layer 72 is used in an array 50 to passivate implanted diode regions 76,78 on the front side thereof, while employing an antireflective coating 74 on the backside anodized surface 70.
    Type: Grant
    Filed: February 2, 1990
    Date of Patent: February 4, 1992
    Assignee: Santa Barbara Research Center
    Inventors: Ichiro Kasai, Richard M. Wallach, Bonnie A. Baumgratz, Michael E. Boyd