Abstract: An array of electrochemical detectors includes an array of electrodes that provide current responsive to oxidation events. Each electrode is coupled to a transistor, an amplifier coupled to an input of the transistor and having a feedback loop coupled to the electrode and providing a bias voltage to the electrode, an integrating capacitor coupled to the transistor operable to integrate charge from the electrode, and a reset switch coupled to the integrating capacitor. The amplifier may have a shared stage with other detectors. A shared buffer circuit may also provide a sampled output from multiple detectors.

Abstract: An array of electrochemical detectors includes an array of electrodes that provide current responsive to oxidation events. Each electrode is coupled to a transistor, an amplifier coupled to an input of the transistor and having a feedback loop coupled to the electrode and providing a bias voltage to the electrode, an integrating capacitor coupled to the transistor operable to integrate charge from the electrode, and a reset switch coupled to the integrating capacitor. The amplifier may have a shared stage with other detectors. A shared buffer circuit may also provide a sampled output from multiple detectors.

Abstract: A field effect transistor has a floating gate with an extended portion. A selectively chemoreceptive finger or layer is electrostatically coupled to the extended portion of the floating gate, and induces a voltage on the gate in response to selected chemicals or other conditions affecting the finger. The voltage on the gate modulates current flowing between a source and a drain of the transistor, effectively sensing the presence of the selected chemicals or conditions. In one embodiment, multiple chemoreceptive fingers are electrostatically coupled to the extended portion of the floating gate. In a further embodiment, an array of such field effect transistors provide a sensor for multiple conditions.

Abstract: A field effect transistor has a floating gate with an extended portion. A selectively chemoreceptive finger or layer is electrostatically coupled to the extended portion of the floating gate, and induces a voltage on the gate in response to selected chemicals or other conditions affecting the finger. The voltage on the gate modulates current flowing between a source and a drain of the transistor, effectively sensing the presence of the selected chemicals or conditions. In one embodiment, multiple chemoreceptive fingers are electrostatically coupled to the extended portion of the floating gate. In a further embodiment, an array of such field effect transistors provide a sensor for multiple conditions.

Abstract: A field effect transistor has a floating gate with an extended portion. A selectively chemoreceptive finger or layer is electrostatically coupled to the extended portion of the floating gate, and induces a voltage on the gate in response to selected chemicals or other conditions affecting the finger. The voltage on the gate modulates current flowing between a source and a drain of the transistor, effectively sensing the presence of the selected chemicals or conditions. In one embodiment, multiple chemoreceptive fingers are electrostatically coupled to the extended portion of the floating gate. In a further embodiment, an array of such field effect transistors provide a sensor for multiple conditions.

Abstract: A floating-gate MOS differential pair amplifier has a regulating feedback voltage whose swing is folded up into the same range over which the input and output voltages swing. In one embodiment, output currents are mirror copies of differential pair currents whose sum is regulated. In a further embodiment, feedback that regulates the sum of the currents is provided to an extra control gate connected to the floating gates. The control gate comprises a capacitive voltage divider in one embodiment that is coupled to gates in the differential pair and in the current mirror.

Abstract: A floating-gate MOS differential pair amplifier has a regulating feedback voltage whose swing is folded up into the same range over which the input and output voltages swing. In one embodiment, output currents are mirror copies of differential pair currents whose sum is regulated. In a further embodiment, feedback that regulates the sum of the currents is provided to an extra control gate connected to the floating gates. The control gate comprises a capacitive voltage divider in one embodiment that is coupled to gates in the differential pair and in the current mirror.

Abstract: Hot-electron injection driven by a hole impact ionization mechanism at the channel-drain junction provides a new method of hot electron injection. Using this mechanism, a four-terminal pFET floating-gate silicon MOS transistor for analog learning applications provides nonvolatile memory storage. Electron tunneling permits bidirectional memory updates. Because these updates depend on both the stored memory value and the transistor terminal voltages, the synapses can implement a learning function. The synapse learning follows a simple power law. Unlike conventional EEPROMs, the synapses allow simultaneous memory reading and writing. Synapse transistor arrays can therefore compute both the array output, and local memory updates, in parallel. Synaptic arrays employing these devices enjoy write and erase isolation between array synapses is better than 0.01% because the tunneling and injection processes are exponential in the transistor terminal voltages.

Abstract: An autozeroing floating-gate amplifier (AFGA) is an integrated continuous-time filter that is intrinsically autozeroing. It can achieve a highpass characteristic at frequencies well below 1 Hz. In contrast with conventional autozeroing amplifiers that eliminate their input offset, the AFGA nulls its output offset. The AFGA is a continuous-time filter; it does not require any clocking. The AFGA includes at least one floating-gate MOS transistor that is capable of hot-electron injection of electrons onto the floating gate of the MOS transistor. Electrons are continuously removed from the floating gate(s), for example, via Fowler-Nordheim tunneling. The AFGA has a stable equilibrium for which this tunneling current is balanced by an injection current of equal magnitude.

Abstract: A three-terminal silicon MOS transistor with a time-varying transfer function is provided which may operate both as a single transistor analog learning device and as a single transistor non-volatile analog memory. The time-varying transfer function is achieved by adding or removing electrons from the fully insulated floating gate of an N-type MOS floating gate transistor. The transistor has a control gate capacitively coupled to the floating gate; it is from the perspective of this control gate that the transfer function of the transistor is modified. Electrons are removed from the floating gate via Fowler-Nordheim tunneling. Electrons are added to the floating gate via hot-electron injection.

Abstract: An autozeroing floating-gate amplifier (AFGA) is an integrated continuous-time filter that is intrinsically autozeroing. It can achieve a highpass characteristic at frequencies well below 1 Hz. In contrast with conventional autozeroing amplifiers that eliminate their input offset, the AFGA nulls its output offset. The AFGA is a continuous-time filter; it does not require any clocking. The AFGA includes at least one floating-gate MOS transistor that is capable of hot-electron injection of electrons onto the floating gate of the MOS transistor. Electrons are continuously removed from the floating gate(s), for example, via Fowler-Nordheim tunneling. The AFGA has a stable equilibrium for which this tunneling current is balanced by an injection current of equal magnitude.

Abstract: A three-terminal silicon MOS transistor with a time-varying transfer function is provided which may operate both as a single transistor analog learning device and as a single transistor non-volatile analog memory. The time-varying transfer function is achieved by adding or removing electrons from the fully insulated floating gate of an N-type MOS floating gate transistor. The transistor has a control gate capacitively coupled to the floating gate; it is from the perspective of this control gate that the transfer function of the transistor is modified. Electrons are removed from the floating gate via Fowler-Nordheim tunneling. Electrons are added to the floating gate via hot-electron injection.

Abstract: A silicon MOS transistor with a time-varying transfer function is provided which may operate both as a single transistor analog learning device and as a single transistor non-volatile analog memory. The time-varying transfer function is achieved by adding or removing electrons from the fully insulated floating gate of an N-type MOS floating gate transistor. The transistor has a control gate capacitively coupled to the floating gate; it is from the perspective of this control gate that the transfer function of the transistor is modified. Electrons are removed from the floating gate via Fowler-Nordheim tunneling. Electrons are added to the floating gate via hot-electron injection.