Abstract: Some embodiments include apparatuses and methods having a memory element included in a non-volatile memory cell, a transistor, an access line coupled to a gate to the transistor, a first conductive line, and a second conductive line. The memory element can include a conductive oxide material located over a substrate and between the first and second conductive lines. The memory element includes a portion coupled to a drain of the transistor and another portion coupled to the second conductive line. The first conductive line is coupled to a source of the transistor and can be located between the access line and the memory element. The access line has a length extending in a first direction and can be located between the substrate and the memory element. The first and second conductive lines have lengths extending in a second direction.

Abstract: The present disclosure relates to the fabrication of spin transfer torque memory devices, wherein a magnetic tunnel junction of the spin transfer torque memory device is formed with Heusler alloys as the fixed and free magnetic layers and a tunnel barrier layer disposed between and abutting the fixed Heusler magnetic layer and the free Heusler magnetic layer, wherein the tunnel barrier layer is lattice matched to the free Heusler magnetic layer. In one embodiment, the tunnel barrier layer may be a strontium titanate layer.

Abstract: A solid oxide fuel cell capable of directly utilizing hydrocarbons as a fuel source at operating temperatures between 200° C. and 500° C. The anode, electrolyte, and cathode of the solid oxide fuel cell can include technologies for improved operation at temperatures between 200° C. and 500° C. The anode can include technologies for improved direct utilization of hydrocarbon fuel sources.

Abstract: A welding-type system includes a power supply configured to control preheating of an electrode wire. A controller is configured to receive a plurality of power values corresponding to a power output of the power supply and calculate an arc power value corresponding to an arc condition at the preheated electrode wire based on a rate of change of the plurality of power values. A target power output value is determined based on the calculated arc power value, and the power output is adjusted based on the determined target power value.

Abstract: A system comprises an article comprising one or more fabric layers, a plurality of electronic devices, each being incorporated into or onto one of the one or more fabric layers, and one or more communication links between two or more of the plurality of electronic devices. Each of the plurality of electronic devices can comprise a flexible substrate coupled to the fabric layer, one or more metallization layers deposited on the flexible substrate, and one or more electronic components electrically coupled to the one or more metallization layers.

Abstract: The present disclosure generally discloses a testing capability related to service testing in a communication network. The testing capability may be configured to support debugging of failures identified during service validation testing of a service in a communication network. The testing capability may be configured to support debugging of failures (e.g., transmission failures or the like) associated with a failed service validation test (e.g., a transmission verification test or the like). The testing capability may be configured to support debugging of failures identified during service validation testing of an Ethernet service. The testing capability may be configured to support debugging of failures (e.g., frame loss or the like) identified during service validation testing of an Ethernet service where the service validation testing of the Ethernet service is performed based on International Telecommunication Union (ITU)—Standardization (ITU-T) Y.

Abstract: Some embodiments include apparatuses and methods having a memory element included in a non-volatile memory cell, a transistor, an access line coupled to a gate to the transistor, a first conductive line, and a second conductive line. The memory element can include a conductive oxide material located over a substrate and between the first and second conductive lines. The memory element includes a portion coupled to a drain of the transistor and another portion coupled to the second conductive line. The first conductive line is coupled to a source of the transistor and can be located between the access line and the memory element. The access line has a length extending in a first direction and can be located between the substrate and the memory element. The first and second conductive lines have lengths extending in a second direction.

Abstract: A cable stripping tool for use with electrical cables comprising an inner core and at least one outer sheath. The cable stripper includes a body including a cable retaining portion having a rotational axis defined therethrough. The cable retaining portion is configured to receive a cable such that its longitudinal axis is coaxial with the rotational axis. The cable stripper also includes first and second cutting blades movable transversely relative to the rotational axis between a retracted position and a cutting position, the cutting blades each having a blade edge. The blade edges of the first and second blades are axially spaced from each other relative to the rotational axis and are arranged such that in the cutting position the first cutting blade is spaced a first radial distance from the rotational axis and the second blade is spaced a second radial distance from the rotational axis that is greater than the first radial distance.

Abstract: Some embodiments include apparatuses and methods having a memory element included in a non-volatile memory cell, a transistor, an access line coupled to a gate to the transistor, a first conductive line, and a second conductive line. The memory element can include a conductive oxide material located over a substrate and between the first and second conductive lines. The memory element includes a portion coupled to a drain of the transistor and another portion coupled to the second conductive line. The first conductive line is coupled to a source of the transistor and can be located between the access line and the memory element. The access line has a length extending in a first direction and can be located between the substrate and the memory element. The first and second conductive lines have lengths extending in a second direction.

Abstract: Systems and methods of a laser welding device are disclosed. The laser welding device includes a laser generator configured to generate welding-type lasing power. A lens focuses the welding-type lasing power at a focal point on a workpiece to generate a puddle during a welding-type operation. A wire feeder is configured to feed wire to the puddle generated by the laser generator. A laser scanner controls the lens to move the focal point of the welding-type lasing power in multiple dimensions over the workpiece during the welding-type operation. In some examples, the feed wire is used in an additive manufacturing process.

Abstract: Systems and methods of a laser welding device to weld aluminum are disclosed. The device includes a laser generator to generate welding-type lasing power and a lens to focus the welding-type lasing power at a focal point on an aluminum workpiece to generate a weld puddle. A laser scanner to control the lens to move the focal point of the welding-type lasing power in multiple dimensions over the aluminum workpiece during welding, the laser generator and the laser scanner to perform the welding without filler metal being added to the workpiece.

Abstract: The present disclosure generally discloses a testing capability related to service testing in a communication network. The testing capability may be configured to support debugging of failures identified during service validation testing of a service in a communication network. The testing capability may be configured to support debugging of failures (e.g., transmission failures or the like) associated with a failed service validation test (e.g., a transmission verification test or the like). The testing capability may be configured to support debugging of failures identified during service validation testing of an Ethernet service. The testing capability may be configured to support debugging of failures (e.g., frame loss or the like) identified during service validation testing of an Ethernet service where the service validation testing of the Ethernet service is performed based on International Telecommunication Union (ITU)-Standardization (ITU-T) Y.

Abstract: A system comprises an article comprising one or more fabric layers, a. plurality of electronic devices, each being incorporated into or onto one of the one or more fabric layers, and one or more communication links between two or more of the plurality of electronic devices. Each of the plurality of electronic devices can comprise a flexible substrate coupled to the fabric layer, one or more metallization layers deposited on the flexible substrate, and one or more electronic components electrically coupled to the one or more metallization layers.

Abstract: A system comprises an article comprising one or more fabric layers, a plurality of electronic devices, each being incorporated into or onto one of the one or more fabric layers, and one or more communication links between two or more of the plurality of electronic devices. Each of the plurality of electronic devices can comprise a flexible substrate coupled to the fabric layer, one or more metallization layers deposited on the flexible substrate, and one or more electronic components electrically coupled to the one or more metallization layers.

Abstract: A method for evaluating an online entity presence includes receiving a set of social media information for at least one entity and calculating a social media measurement where the social media measurement is associated with the set of social media information. The method further includes receiving a set of online profile information for the at least one entity, the set of online profile information being associated with one or more non-social media online profiles, and calculating an online profile measurement wherein the online profile measurement is associated with the set of online profile information. The method further includes calculating a reach value, the reach value being associated with the social media measurement and the online profile measurement and providing a reach score to a user where the reach score associated with the reach value.

Abstract: The invention pertains to the field of construction of buildings and structures. The invention relates to alignment guides for constructing building components, namely walls, ceilings and floors to be used in buildings and structures. This invention also relates to kits of specific alignment guides and methods of using alignment guides.

Abstract: Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.

Abstract: The invention pertains to the field of construction of buildings and structures. The invention relates to alignment guides for constructing building components, namely walls, ceilings and floors to be used in buildings and structures. This invention also relates to kits of specific alignment guides and methods of using alignment guides.

Abstract: The invention pertains to the field of construction of buildings and structures. The invention relates to alignment guides for constructing building components, namely walls, ceilings and floors to be used in buildings and structures. This invention also relates to kits of specific alignment guides and methods of using alignment guides.

Abstract: Methods and systems to read a logic value stored in a magnetic tunnel junction (MTJ)-based memory cell based on a pulsed read current, with time between pulses to permit the MTJ to relax towards the magnetization orientation between the pulses, which may reduce build-up of momentum within the MTJ, and which may reduce and/or eliminate inadvertent re-alignment of a magnetization orientation. A sequence of symmetric and/or non-symmetric pulses may be applied to a wordline (WL) to cause a pre-charged bit line (BL) capacitance to discharge a pulsed read current through the MTJ, resulting in a corresponding sequence of voltage changes on the BL. The BL voltage changes may be integrated over the sequence of read current pulses, and a stored logic value may be determined based on the integrated voltage changes. The pre-charged BL capacitance may also serve as the voltage integrator.