Abstract: An open loop process and temperature independent bias circuit for stacked device amplifiers is disclosed herein. In one or more embodiments, a method for biasing a stacked high-voltage signal amplifier with a voltage divider bias module comprises generating, by the voltage divider bias module from a power supply voltage (VDD), a plurality of control voltage biases, which comprise a plurality of voltage references plus an offset voltage term (Vtemp). In one or more embodiments, the plurality of voltage references are each proportional to a division of the power supply voltage (VDD), and the offset voltage term (Vtemp) is proportional to temperature and is a function of process variation. The method further comprises biasing, a plurality of devices of the stacked high-voltage signal amplifier, with the control voltage biases.

Abstract: An amplifier with stacked transconducting cells in “current mode combining” is disclosed herein. In one or more embodiments, a method for operation of a high-voltage signal amplifier comprises inputting, into each transconducting cell of a plurality of transconducting cells, a direct current (DC) supply current (Idc), an alternating current (AC) radio frequency (RF) input current (IRF_IN), and an RF input signal (RFIN). The method further comprises outputting, by each of the transconducting cells of the plurality of transconducting cells, the DC supply current (Idc) and an AC RF output current (IRF_OUT). In one or more embodiments, the transconducting cells are connected together in cascode for the DC supply current, and are connected together in cascade for the AC RF input and output currents.

Abstract: An amplifier with stacked transconducting cells in parallel and/or cascade “current mode” combining is disclosed herein. In one or more embodiments, a method for operation of a high-voltage signal amplifier comprises inputting, into each transconducting cell of a plurality of transconducting cells, a direct current (DC) supply current (Idc), an alternating current (AC) radio frequency (RF) input current (IRF_IN), and an RF input signal (RFIN). The method further comprises outputting, by each of the transconducting cells of the plurality of transconducting cells, the DC supply current (Idc) and an AC RF output current (IRF_OUT). In one or more embodiments, the transconducting cells are connected together in cascode for the DC supply current (Idc), are connected together in parallel (or in cascade) for the RF input signal (RFIN), and are connected together in parallel (or in cascade) for the AC RF output currents (IRF_OUT).

Abstract: An antenna array includes a plurality of power amplifiers, each having a signal input, a signal output coupled to a cell of the antenna array, and a power input. The antenna array includes a plurality of power supplies, each power supply individually and separately coupled to a corresponding one of the plurality of power amplifiers at a respective power input. The antenna array further includes single a pre-distortion linearizer with a linearizer input that receives a signal and a linearizer output that is coupled to each signal input of each of the plurality of power amplifiers. Each power amplifier is operated in gain compression by setting its operating voltage according to a power output of the power amplifier.

Abstract: An antenna array includes a plurality of power amplifiers, each having a signal input, a signal output coupled to a cell of the antenna array, and a power input. The antenna array includes a plurality of power supplies, each power supply individually and separately coupled to a corresponding one of the plurality of power amplifiers at a respective power input. The antenna array further includes single a pre-distortion linearizer with a linearizer input that receives a signal and a linearizer output that is coupled to each signal input of each of the plurality of power amplifiers. Each power amplifier is operated in gain compression by setting its operating voltage according to a power output of the power amplifier.

Abstract: A method of detecting small changes to a complex integrated circuit measuring RF/microwave scattering parameters between every pin over a wide frequency range. The data from a characterization of a known good integrated circuit is stored and compared to each subsequent integrated circuit of unknown background.

Abstract: An antenna and power amplifier element assembly may include an antenna assembly and a quasi-optic power amplifier. The quasi-optic power amplifier may include an output transistor coupled to the antenna assembly. A harmonic trap may be coupled to the quasi-optic power amplifier.

Abstract: A method of detecting small changes to a complex integrated circuit measuring RF/microwave scattering parameters between every pin over a wide frequency range. The data from a characterization of a known good integrated circuit is stored and compared to each subsequent integrated circuit of unknown background.

Abstract: A method of detecting small changes to a complex integrated circuit measuring RF/microwave scattering parameters between every pin over a wide frequency range. The data from a characterization of a known good integrated circuit is stored and compared to each subsequent integrated circuit of unknown background.

Abstract: A method to improve characteristics of PIN diode switches, attenuators, and limiters via the control of nodal signal voltages by local impedance control.

Abstract: A method of detecting small changes to a complex integrated circuit measuring RF/microwave scattering parameters between every pin over a wide frequency range. The data from a characterization of a known good integrated circuit is stored and compared to each subsequent integrated circuit of unknown background.

Abstract: A method to improve characteristics of PIN diode switches, attenuators, and limiters via the control of nodal signal voltages by local impedance control.

Abstract: An ultra wideband, frequency dependent attenuator apparatus for providing a loss which can be matched with a physically longer, given delay line, but yet which provides a much shorter time delay than the physically longer, given delay line with constant group delay. The apparatus is formed by an ordinary microstrip transmission line placed in series with an engineered lossy microstrip transmission line, with both transmission lines being placed on a substrate to effectively form a hybrid microstrip transmission line. The lossy transmission line includes resistive material placed along the opposing longitudinal edges thereof. In one embodiment, spaced apart metal tracks are formed along each strip of resistive material to provide the lossy microstrip transmission line with a desired loss characteristic.

Abstract: An ultra wideband, frequency dependent attenuator apparatus for providing a loss which can be matched with a physically longer, given delay line, but yet which provides a much shorter time delay than the physically longer, given delay line with constant group delay. The apparatus is formed by an ordinary microstrip transmission line placed in series with an engineered lossy microstrip transmission line, with both transmission lines being placed on a substrate to effectively form a hybrid microstrip transmission line. The lossy transmission line includes resistive material placed along the opposing longitudinal edges thereof. In one embodiment, spaced apart metal tracks are formed along each strip of resistive material to provide the lossy microstrip transmission line with a desired loss characteristic.

Abstract: An ultra wideband, frequency dependent attenuator apparatus for providing a loss which can be matched with a physically longer, given delay line, but yet which provides a much shorter time delay than the physically longer, given delay line with constant group delay. The apparatus is formed by an ordinary microstrip transmission line placed in series with an engineered lossy microstrip transmission line, with both transmission lines being placed on a substrate to effectively form a hybrid microstrip transmission line. The lossy transmission line includes resistive material placed along the opposing longitudinal edges thereof. In one embodiment, spaced apart metal tracks are formed along each strip of resistive material to provide the lossy microstrip transmission line with a desired loss characteristic.

Abstract: An ultra wideband, frequency dependent attenuator apparatus for providing a loss which can be matched with a physically longer, given delay line, but yet which provides a much shorter time delay than the physically longer, given delay line with constant group delay. The apparatus is formed by an ordinary microstrip transmission line placed in series with an engineered lossy microstrip transmission line, with both transmission lines being placed on a substrate to effectively form a hybrid microstrip transmission line. The lossy transmission line includes resistive material placed along the opposing longitudinal edges thereof. In one embodiment, spaced apart metal tracks are formed along each strip of resistive material to provide the lossy microstrip transmission line with a desired loss characteristic.

Abstract: A simple continuous metal pattern in a single plane is suspended in a waveguide filled with dielectric material. Two conductive pins penetrate the backshort of the waveguide in an axial direction and are connected at corresponding locations at opposite sides of the metal pattern. The metal pattern forms a radiating element in the shape of a continuous ring, having two convex (with reference to the central axis of the waveguide) primary antenna segments, each of which has one end joined to the corresponding end of the other segment by a narrow bridge segment. The opposite ends of the primary antenna segments extend generally away from each other and are joined by a narrow feedback segment. Within a desired frequency range of operation, the continuous metal pattern is excitable to produce both dominant orthogonal modes of circular polarization with the 90 degree phase difference and in both RHCP and LHCP orientation.