Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) a silica abrasive; (b) an oxidizing agent; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 2 or less. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising a boron-doped polysilicon layer on a surface of the substrate, using said composition.

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) a silica abrasive, (b) a surfactant, (c) an iron cation, (d) optionally a ligand, and (e) water, wherein the silica abrasive has a negative zeta potential in the chemical-mechanical polishing composition. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising a carbon-based film, using said composition.

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) ceria abrasive particles; (b) a cationic polymer; (c) a conductivity adjust selected from an ammonium salt, a potassium salt, and a combination thereof; and (d) water, wherein the polishing composition has a pH of about 3 to about 6. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide, silicon nitride, and polysilicon, using the inventive polishing composition.

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) ceria abrasive particles; (b) a cationic polymer; (c) a buffer; and (d) water, wherein the polishing composition has a pH of about 6 to about 9. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide, silicon nitride, and polysilicon, using the inventive polishing composition.

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) an anionic polymer having a weight average molecular weight of about 400 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity of at least about 1 cPs, a ratio of viscosity (cPs) to wt. % of silica abrasive of about 0.2 cPs/wt. % to about 1.5 cPs/wt. %, and a pH of about 9 to about 12. The invention additional provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) a nonionicpolymer having a weight average molecular weight of about 300 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity of at least about 2 cPs, and a pH of about 9 to about 12.

Abstract: A chemical mechanical polishing composition for polishing a substrate including a silicon carbonitride layer, the composition comprising, consisting essentially of, or consisting of a water based liquid carrier, anionic colloidal silica particles dispersed in the liquid carrier, a topography control agent, and having a pH in a range from about 2 to about 7.

Abstract: The invention provides a method of chemically mechanically polishing a substrate, especially a substrate comprising boron-doped polysilicon, comprising contacting the substrate with a chemical-mechanical polishing composition comprising an abrasive selected from ?-alumina, silica, and a combination thereof, ferric ion, an organic acid, or a combination thereof, and water. The invention also provides a chemical-mechanical polishing composition comprising ?-alumina, a nitrogen-containing compound selected from a zwitterionic homopolymer at, a monomeric ammonium salt, and a combination thereof, an organic acid, and water. The invention further provides a chemical-mechanical polishing composition comprising silica, an organic acid, ferric ion, and water.

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) a silica abrasive, (b) a surfactant, (c) an iron cation, (d) optionally a ligand, and (e) water, wherein the silica abrasive has a negative zeta potential in the chemical-mechanical polishing composition. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising a carbon-based film, using said composition.

Abstract: A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material includes a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and an organic diacid.

Abstract: A chemical mechanical polishing composition for polishing a substrate having a polysilicon layer includes a water based liquid carrier, a silica abrasive, an amino acid or guanidine derivative containing polysilicon polishing accelerator, and an alkali metal salt. The composition includes less than about 500 ppm tetraalkylammonium salt and has a pH in a range from about 10 to about 11.

Abstract: The invention provides a chemical-mechanical polishing composition including wet-process ceria particles having a median particle size of about 25 nm to about 150 nm and a particle size distribution of about 300 nm or more, and an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon layer, with the polishing composition.

Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a sapphire substrate. The composition contains a diamond abrasive and a pH adjuster. The method involves contacting the substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

Abstract: The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate, especially a substrate comprising a silicon oxide layer, with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 75 nm to about 200 nm, and are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. % a functionalized heterocycle, a cationic polymer selected from a quaternary amine, is cationic polyvinyl alcohol, and a cationic cellulose, optionally a carboxylic acid, a pH-adjusting agent, and an aqueous carrier, and have a pH of about 1 to about 6.

Abstract: The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increases the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.

Abstract: The invention provides a chemical-mechanical polishing composition comprising, consisting essentially of, or consisting of (a) about 0.01 wt. % to about 1 wt. % of wet-process ceria, (b) about 10 ppm to about 200 ppm of a cationic polymer comprising quaternary amino groups, (c) about 10 ppm to about 2000 ppm of a non-fluorinated nonionic surfactant, (d) an amino acid, and (e) water, wherein the polishing composition has a pH of about 3 to about 8. The invention further provides a method of polishing a substrate with the polishing composition.

Abstract: The invention provides a chemical-mechanical polishing composition comprising, consisting essentially of, or consisting of (a) about 0.01 wt. % to about 1 wt. % of wet-process ceria, (b) about 10 ppm to about 200 ppm of a cationic polymer comprising quaternary amino groups, (c) about 10 ppm to about 2000 ppm of a non-fluorinated nonionic surfactant, (d) an amino acid, and (e) water, wherein the polishing composition has a pH of about 3 to about 8. The invention further provides a method of polishing a substrate with the polishing composition.

Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

Abstract: A system for controlling bicycle tire air pressure on the go is provided. The system has a wheel mounted portion and a control unit in communication with one another. The wheel mounted portion attached to each wheel has a gas source, manifold, regulator to control air flow into and out of the tire, and a communication device. The control unit monitors air pressure in each tire, and has a user interface allowing input of a higher or lower tire pressure. Based on user input, the control unit instructs operation of the wheel mounted portion, controlling pressure within the tire.