Patents by Inventor Bruce D. Terris

Bruce D. Terris has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10553647
    Abstract: An apparatus is provided that includes a bit line above a substrate, a word line above the substrate, and a non-volatile memory cell between the bit line and the word line. The non-volatile memory cell includes a reversible resistance-switching memory element coupled in series with an isolation element. The isolation element includes a first selector element coupled in series with a second selector element. The first selector element includes a first snapback current, and the second selector element includes a second snapback current lower than the first snapback current.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: February 4, 2020
    Assignee: SanDisk Technologies LLC
    Inventors: Michael K. Grobis, Derek Stewart, Bruce D. Terris
  • Publication number: 20200006432
    Abstract: An apparatus is provided that includes a bit line above a substrate, a word line above the substrate, and a non-volatile memory cell between the bit line and the word line. The non-volatile memory cell includes a reversible resistance-switching memory element coupled in series with an isolation element. The isolation element includes a first selector element coupled in series with a second selector element. The first selector element includes a first snapback current, and the second selector element includes a second snapback current lower than the first snapback current.
    Type: Application
    Filed: June 28, 2018
    Publication date: January 2, 2020
    Applicant: SANDISK TECHNOLOGIES LLC
    Inventors: Michael K. Grobis, Derek Stewart, Bruce D. Terris
  • Patent number: 10355049
    Abstract: An apparatus is provided that includes a bit line above a substrate, a word line above the substrate, and a non-volatile memory cell between the bit line and the word line. The non-volatile memory cell includes a reversible resistance-switching memory element coupled in series with an isolation element. The isolation element includes a first selector element coupled in series with a second selector element.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: July 16, 2019
    Assignee: SanDisk Technologies LLC
    Inventors: Michael K. Grobis, Derek Stewart, Bruce D. Terris
  • Patent number: 10014045
    Abstract: Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. The data storage layers are each formed from a multi-layer structure. At ambient temperatures, the multi-layer structures exhibit an antiparallel coupling state with a near zero net magnetic moment. At higher transition temperatures, the multi-layer structures transition from the antiparallel coupling state to a parallel coupling state with a net magnetic moment. At yet higher temperatures, the multi-layer structure transitions from the antiparallel coupling state to a receiving state where the coercivity of the multi-layer structures drops below a particular level so that magnetic fields from write elements or neighboring data storage layers may imprint data into the data storage layer.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: July 3, 2018
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Olav Hellwig, Bruce D. Terris, Jan-Ulrich Thiele
  • Patent number: 9552837
    Abstract: In one general embodiment, a magnetic medium includes a recording layer having at least three exchange control layers each having a magnetic moment less than 100 emu/cc, and four magnetic layers separated from one another by the exchange control layers. An uppermost of the magnetic layers is doped with oxygen. In another general embodiment, a magnetic medium includes a recording layer having at least three exchange control layers and four magnetic layers separated from one another by the exchange control layers. An uppermost of the magnetic layers has an oxygen content of greater than 0.5 vol %. An average pitch of magnetic grains in a lowermost of the magnetic layers is 9 nm or less. A lowermost of the magnetic layers has an oxide content of at least 20 vol %.
    Type: Grant
    Filed: November 1, 2013
    Date of Patent: January 24, 2017
    Assignee: HGST Netherlands B.V.
    Inventors: Hoa V. Do, Sylvia H. Florez, Yoshihiro Ikeda, Kentaro Takano, Bruce D. Terris, Qing Zhu
  • Publication number: 20150124350
    Abstract: In one general embodiment, a magnetic medium includes a recording layer having at least three exchange control layers each having a magnetic moment less than 100 emu/cc, and four magnetic layers separated from one another by the exchange control layers. An uppermost of the magnetic layers is doped with oxygen. In another general embodiment, a magnetic medium includes a recording layer having at least three exchange control layers and four magnetic layers separated from one another by the exchange control layers. An uppermost of the magnetic layers has an oxygen content of greater than 0.5 vol %. An average pitch of magnetic grains in a lowermost of the magnetic layers is 9 nm or less. A lowermost of the magnetic layers has an oxide content of at least 20 vol %.
    Type: Application
    Filed: November 1, 2013
    Publication date: May 7, 2015
    Applicant: HGST Netherlands B.V.
    Inventors: Hoa V. Do, Sylvia H. Florez, Yoshihiro Ikeda, Kentaro Takano, Bruce D. Terris, Qing Zhu
  • Publication number: 20150078074
    Abstract: Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. The data storage layers are each formed from a multi-layer structure. At ambient temperatures, the multi-layer structures exhibit an antiparallel coupling state with a near zero net magnetic moment. At higher transition temperatures, the multi-layer structures transition from the antiparallel coupling state to a parallel coupling state with a net magnetic moment. At yet higher temperatures, the multi-layer structure transitions from the antiparallel coupling state to a receiving state where the coercivity of the multi-layer structures drops below a particular level so that magnetic fields from write elements or neighboring data storage layers may imprint data into the data storage layer.
    Type: Application
    Filed: November 26, 2014
    Publication date: March 19, 2015
    Inventors: Olav Hellwig, Bruce D. Terris, Jan-Ulrich Thiele
  • Patent number: 8920948
    Abstract: According to one embodiment, a patterned magnetic storage medium is disclosed herein. The magnetic storage medium includes a pattern formed on a substrate. The pattern includes at least a first and second feature and an edge defined between the first and second features. Additionally, the magnetic storage medium includes a magnetic layer formed on the pattern. The magnetic layer includes grains separated by a non-magnetic segregant boundary. The segregant boundary is positioned above the edge of the pattern.
    Type: Grant
    Filed: December 31, 2011
    Date of Patent: December 30, 2014
    Assignee: HGST Netherlands B.V.
    Inventors: Liesl Folks, Michael K. Grobis, Dan S. Kercher, Ricardo Ruiz, Kentaro Takano, Bruce D. Terris, Qing Zhu
  • Patent number: 8911888
    Abstract: Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. The data storage layers are each formed from a multi-layer structure. At ambient temperatures, the multi-layer structures exhibit an antiparallel coupling state with a near zero net magnetic moment. At higher transition temperatures, the multi-layer structures transition from the antiparallel coupling state to a parallel coupling state with a net magnetic moment. At yet higher temperatures, the multi-layer structure transitions from the antiparallel coupling state to a receiving state where the coercivity of the multi-layer structures drops below a particular level so that magnetic fields from write elements or neighboring data storage layers may imprint data into the data storage layer.
    Type: Grant
    Filed: December 16, 2007
    Date of Patent: December 16, 2014
    Assignee: HGST Netherlands B.V.
    Inventors: Olav Hellwig, Bruce D. Terris, Jan-Ulrich Thiele
  • Publication number: 20130170065
    Abstract: According to one embodiment, a patterned magnetic storage medium is disclosed herein. The magnetic storage medium includes a pattern formed on a substrate. The pattern includes at least a first and second feature and an edge defined between the first and second features. Additionally, the magnetic storage medium includes a magnetic layer formed on the pattern. The magnetic layer includes grains separated by a non-magnetic segregant boundary. The segregant boundary is positioned above the edge of the pattern.
    Type: Application
    Filed: December 31, 2011
    Publication date: July 4, 2013
    Inventors: Liesl Folks, Michael K. Grobis, Dan S. Kercher, Ricardo Ruiz, Kentaro Takano, Bruce D. Terris, Qing Zhu
  • Patent number: 8199553
    Abstract: A three-dimensional nonvolatile memory array device includes a plurality of memory elements and a memory controller. The plurality of memory elements each have a stack of a plurality of bits, which in turn each include a magnetic free layer, a magnetic pinned layer, and a non-magnetic layer. The magnetic free layer is configured to alternate its magnetization orientation based on a radio frequency current being at a resonant frequency of the magnetic free layer and on a magnetic field being applied to the magnetic free layer. The magnetic pinned layer has a specific magnetization orientation. The non-magnetic layer is located in between the magnetic free layer and the magnetic pinned layer. The memory controller is in communication with each of the plurality of memory elements, and configured to write data to and read data from the plurality of bits in the memory elements.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: June 12, 2012
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Wenyu Chen, Sylvia H. Florez Marino, Liesl Folks, Bruce D. Terris
  • Patent number: 8164940
    Abstract: Read/write structures for three-dimensional memories are disclosed. In one embodiment, a three-dimensional memory includes a plurality of data storage layers fabricated in parallel on top of one another to form a three-dimensional structure. Each data storage layer is able to store bits of data in the form of magnetic domains. The memory further includes a column of write elements that is operable to write a column of magnetic domains to the first data storage layer representing a column of bits. The first data storage layer is patterned into a plurality of magnetic conductors aligned transverse to the column of write elements. A control system may inject spin-polarized current pulses in the magnetic conductors to transfer the column of magnetic domains laterally within the first data storage layer. The control system may transfer of the column of magnetic domains perpendicularly from the first data storage layer to another data storage layer.
    Type: Grant
    Filed: December 15, 2009
    Date of Patent: April 24, 2012
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Ozhan Ozatay, Bruce D. Terris
  • Patent number: 8018765
    Abstract: Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
    Type: Grant
    Filed: September 3, 2009
    Date of Patent: September 13, 2011
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Robert E. Fontana, Jr., Andreas Moser, Hal J. Rosen, Bruce D. Terris, Ching Hwa Tsang
  • Publication number: 20110149632
    Abstract: A three-dimensional nonvolatile memory array device includes a plurality of memory elements and a memory controller. The plurality of memory elements each have a stack of a plurality of bits, which in turn each include a magnetic free layer, a magnetic pinned layer, and a non-magnetic layer. The magnetic free layer is configured to alternate its magnetization orientation based on a radio frequency current being at a resonant frequency of the magnetic free layer and on a magnetic field being applied to the magnetic free layer. The magnetic pinned layer has a specific magnetization orientation. The non-magnetic layer is located in between the magnetic free layer and the magnetic pinned layer. The memory controller is in communication with each of the plurality of memory elements, and configured to write data to and read data from the plurality of bits in the memory elements.
    Type: Application
    Filed: December 17, 2009
    Publication date: June 23, 2011
    Inventors: Wenyu Chen, Sylvia H. Florez Marino, Liesl Folks, Bruce D. Terris
  • Publication number: 20110141792
    Abstract: Read/write structures for three-dimensional memories are disclosed. In one embodiment, a three-dimensional memory includes a plurality of data storage layers fabricated in parallel on top of one another to form a three-dimensional structure. Each data storage layer is able to store bits of data in the form of magnetic domains. The memory further includes a column of write elements that is operable to write a column of magnetic domains to the first data storage layer representing a column of bits. The first data storage layer is patterned into a plurality of magnetic conductors aligned transverse to the column of write elements. A control system may inject spin-polarized current pulses in the magnetic conductors to transfer the column of magnetic domains laterally within the first data storage layer. The control system may transfer of the column of magnetic domains perpendicularly from the first data storage layer to another data storage layer.
    Type: Application
    Filed: December 15, 2009
    Publication date: June 16, 2011
    Inventors: Ozhan Ozatay, Bruce D. Terris
  • Patent number: 7821822
    Abstract: Read/write elements for three-dimensional magnetic memories are disclosed. One embodiment describes an array of integrated read/write elements. The array includes read conductors formed proximate to one of the layers (i.e., storage stacks) of the three-dimensional magnetic memory. The array also includes flux caps formed proximate to the read conductors, and read sensors formed proximate to the flux caps. The array also includes a magnetic pole having a first end contacting the read sensor and a second end opposite the first end. First write conductors are fabricated between the magnetic poles, and second write conductors are also fabricated between the magnetic poles orthogonal to the first write conductors. The first write conductors and the second write conductors form current loops around the magnetic poles.
    Type: Grant
    Filed: August 14, 2008
    Date of Patent: October 26, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Robert E. Fontana, Jr., Jordan A. Katine, Ching Hwa Tsang, Barry Stipe, Bruce D. Terris
  • Publication number: 20100039849
    Abstract: Read/write elements for three-dimensional magnetic memories are disclosed. One embodiment describes an array of integrated read/write elements. The array includes read conductors formed proximate to one of the layers (i.e., storage stacks) of the three-dimensional magnetic memory. The array also includes flux caps formed proximate to the read conductors, and read sensors formed proximate to the flux caps. The array also includes a magnetic pole having a first end contacting the read sensor and a second end opposite the first end. First write conductors are fabricated between the magnetic poles, and second write conductors are also fabricated between the magnetic poles orthogonal to the first write conductors. The first write conductors and the second write conductors form current loops around the magnetic poles.
    Type: Application
    Filed: August 14, 2008
    Publication date: February 18, 2010
    Inventors: Robert E. Fontana, JR., Jordan A. Katine, Ching Hwa Tsang, Barry Stipe, Bruce D. Terris
  • Publication number: 20100002487
    Abstract: Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
    Type: Application
    Filed: September 3, 2009
    Publication date: January 7, 2010
    Inventors: Robert E. Fontana, JR., Andreas Moser, Hal J. Rosen, Bruce D. Terris, Ching Hwa Tsang
  • Patent number: 7606065
    Abstract: Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
    Type: Grant
    Filed: May 6, 2008
    Date of Patent: October 20, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Robert E. Fontana, Jr., Andreas Moser, Hal J. Rosen, Bruce D. Terris, Ching Hwa Tsang
  • Publication number: 20090154219
    Abstract: Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. The data storage layers are each formed from a multi-layer structure. At ambient temperatures, the multi-layer structures exhibit an antiparallel coupling state with a near zero net magnetic moment. At higher transition temperatures, the multi-layer structures transition from the antiparallel coupling state to a parallel coupling state with a net magnetic moment. At yet higher temperatures, the multi-layer structure transitions from the antiparallel coupling state to a receiving state where the coercivity of the multi-layer structures drops below a particular level so that magnetic fields from write elements or neighboring data storage layers may imprint data into the data storage layer.
    Type: Application
    Filed: December 16, 2007
    Publication date: June 18, 2009
    Inventors: Olav Hellwig, Bruce D. Terris, Jan-Ulrich Thiele