Patents by Inventor Bruce David Terris

Bruce David Terris has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9601145
    Abstract: A heat-assisted magnetic recording (HAMR) disk has multiple independent data layers, each data layer being a continuous non-patterned layer of magnetizable material. Each data layer can store data independent and not related to the data stored in the other data layers. The data layers are separated by a nonmagnetic spacer layer (SL) and each data layer is formed of high-anisotropy (Ku) material so that the coercivities of lower and upper data layers (RL1 and RL2) are greater than the magnetic write field. At a high laser power both RL1 and RL2 are heated to above their respective Curie temperatures and data is recorded in both RL1 and RL2. At low laser power only upper RL2 is heated to above its Curie temperature and data is recorded only in RL2. The SL prevents lower RL1 from being heated to above its Curie temperature at low laser power.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: March 21, 2017
    Assignee: HGST Netherlands B.V.
    Inventors: Michael Konrad Grobis, Virat Vasav Mehta, Gregory John Parker, Hal Jervis Rosen, Bruce David Terris
  • Patent number: 9530445
    Abstract: A heat-assisted magnetic recording medium has a heat-sink layer, a chemically-ordered FePt alloy magnetic layer and a perovskite oxide intermediate layer between the heat-sink layer and the magnetic layer. The perovskite oxide intermediate layer may function as both a seed layer for the magnetic layer and a thermal barrier layer, as just a seed layer for the magnetic layer, or as just a thermal barrier layer. The intermediate layer is formed of a material selected from a ABO3 perovskite oxide (where A is selected from one or more of Ba, Sr and Ca and B is selected from one or more of Zr, Ce, Hf, Sn, Ir, and Nb), and a A2REBO6 rare earth double perovskite oxide (where RE is a rare earth element, A is selected from Ba, Sr and Ca, and B is selected from Nb and Ta).
    Type: Grant
    Filed: January 21, 2016
    Date of Patent: December 27, 2016
    Assignee: HGST Netherlands B.V.
    Inventors: Michael Konrad Grobis, Olav Hellwig, Bruce David Terris, Sung Hun Wee
  • Publication number: 20150001655
    Abstract: A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure.
    Type: Application
    Filed: September 15, 2014
    Publication date: January 1, 2015
    Inventors: Jonathan Sun, Rolf Allenspach, Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Bruce David Terris
  • Patent number: 8860105
    Abstract: A spin-current switched magnetic memory element includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers. The plurality of magnetic layers includes at least one composite layer.
    Type: Grant
    Filed: September 4, 2013
    Date of Patent: October 14, 2014
    Assignee: International Business Machines Corporation
    Inventors: Jonathan Zanhong Sun, Rolf Allenspach, Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Bruce David Terris
  • Publication number: 20140008743
    Abstract: A spin-current switched magnetic memory element includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers. The plurality of magnetic layers includes at least one composite layer.
    Type: Application
    Filed: September 4, 2013
    Publication date: January 9, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jonathan Zanhong Sun, Rolf Allenspach, Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Bruce David Terris
  • Patent number: 8558332
    Abstract: A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, in which the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: October 15, 2013
    Assignee: International Business Machines Corporation
    Inventors: Jonathan Zanhong Sun, Rolf Allenspach, Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Bruce David Terris
  • Patent number: 8422284
    Abstract: One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: April 16, 2013
    Assignee: HGST Netherlands B.V.
    Inventors: Liesl Folks, Bruce David Terris
  • Patent number: 8379495
    Abstract: A laser, such as a horizontal cavity surface emitting laser, with internal polarization rotation may be used in thermally assisted recording in hard disk drives. The desired polarization of the laser may be accomplished with two beam reflections off of facets within the laser. The facets may be formed in a single ion beam etching step. The laser may be used on a thermally assisted recording head to produce a polarized beam that is aligned with a track direction of the disk.
    Type: Grant
    Filed: April 5, 2012
    Date of Patent: February 19, 2013
    Assignee: HGST Netherlands B.V.
    Inventors: Thomas Dudley Boone, Jr., Timothy Carl Strand, Bruce David Terris
  • Publication number: 20120195341
    Abstract: A laser, such as a horizontal cavity surface emitting laser, with internal polarization rotation may be used in thermally assisted recording in hard disk drives. The desired polarization of the laser may be accomplished with two beam reflections off of facets within the laser. The facets may be formed in a single ion beam etching step. The laser may be used on a thermally assisted recording head to produce a polarized beam that is aligned with a track direction of the disk.
    Type: Application
    Filed: April 5, 2012
    Publication date: August 2, 2012
    Applicant: Hitachi Global Storage Technologies Netherlands B. V.
    Inventors: Thomas Dudley Boone, JR., Timothy Carl Strand, Bruce David Terris
  • Patent number: 8213271
    Abstract: A horizontal cavity, surface emitting laser (HCSEL) with internal polarization rotation is used in thermally assisted recording in hard disk drives. The desired polarization of the laser is accomplished with two beam reflections off of facets within the diode. The facets are formed in a single ion beam etching step. This device can be used in a thermally assisted recording head to produce polarization incident on the disk aligned with the direction of the tracks on the disk.
    Type: Grant
    Filed: December 31, 2008
    Date of Patent: July 3, 2012
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Thomas Dudley Boone, Jr., Timothy Carl Strand, Bruce David Terris
  • Publication number: 20110147866
    Abstract: A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, in which the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure.
    Type: Application
    Filed: March 4, 2011
    Publication date: June 23, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jonathan Zanhong Sun, Rolf Allenspach, Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Bruce David Terris
  • Patent number: 7943399
    Abstract: A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.
    Type: Grant
    Filed: August 27, 2009
    Date of Patent: May 17, 2011
    Assignee: International Business Machines Corporation
    Inventors: Jonathan Zanhong Sun, Rolf Allenspach, Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Bruce David Terris
  • Patent number: 7872905
    Abstract: A method and apparatus for write enable and write inhibit for high density spin torque three dimensional (3D) memory arrays.
    Type: Grant
    Filed: October 31, 2008
    Date of Patent: January 18, 2011
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Sylvia Helena Florez Marino, Liesl Folks, Bruce David Terris
  • Patent number: 7862912
    Abstract: A perpendicular magnetic recording medium, usable for either continuous or patterned media, has a recording layer structure (RLS) of first and second perpendicular magnetic layers (PM1, PM2) and an antiferromagnetically coupling (AFC) layer and a ferromagnetic switching layer (SWL) between PM1 and PM2. The magnetic recording system uses heat to assist in the reading and/or writing of data. The SWL is a Co/Ni multilayer with a Curie temperature (TC-SWL) less than the Curie temperatures of PM1 and PM2. At room temperature, there is ferromagnetic coupling between SWL and the upper ferromagnetic layer (PM2) so that the magnetizations of SWL and PM2 are parallel, and antiferromagnetic coupling between SWL and the lower ferromagnetic layer (PM1) across the AFC layer so that the magnetization of PM1 is aligned antiparallel to the magnetizations of SWL and PM2.
    Type: Grant
    Filed: March 4, 2008
    Date of Patent: January 4, 2011
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Olav Hellwig, Bruce David Terris, Jan-Ulrich Thiele
  • Publication number: 20100165801
    Abstract: A horizontal cavity, surface emitting laser (HCSEL) with internal polarization rotation is used in thermally assisted recording in hard disk drives. The desired polarization of the laser is accomplished with two beam reflections off of facets within the diode. The facets are formed in a single ion beam etching step. This device can be used in a thermally assisted recording head to produce polarization incident on the disk aligned with the direction of the tracks on the disk.
    Type: Application
    Filed: December 31, 2008
    Publication date: July 1, 2010
    Applicant: Hitachi Global Storage Technologies Netherlands BV
    Inventors: Thomas Dudley Boone, JR., Timothy Carl Strand, Bruce David Terris
  • Publication number: 20100118585
    Abstract: One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.
    Type: Application
    Filed: December 8, 2009
    Publication date: May 13, 2010
    Applicant: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
    Inventors: Liesl Folks, Bruce David Terris
  • Patent number: 7652915
    Abstract: One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.
    Type: Grant
    Filed: December 19, 2006
    Date of Patent: January 26, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Liesl Folks, Bruce David Terris
  • Publication number: 20090317923
    Abstract: A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.
    Type: Application
    Filed: August 27, 2009
    Publication date: December 24, 2009
    Applicant: International Business Machines Corporation
    Inventors: Jonathan Zanhong Sun, Rolf Allenspach, Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Bruce David Terris
  • Publication number: 20090258186
    Abstract: A process for forming a plurality of sliders for use in thermally-assisted recording (TAR) disk drives includes a wafer-level process for forming a plurality of aperture structures, and optionally abutting optical channels, on a wafer surface prior to cutting the wafer into individual sliders. The wafer has a generally planar surface arranged into a plurality of rectangularly-shaped regions. In each rectangular region a first metal layer is deposited on the wafer surface, followed by a layer of radiation-transmissive aperture material, which is then lithographically patterned to define the width of the aperture, the aperture width being parallel to the length of the rectangularly-shaped region. A second metal layer is deposited over the patterned layer of aperture material. The resulting structure is then lithographically patterned to define an aperture structure comprising aperture material surrounded by metal and having parallel radiation entrance and exit faces orthogonal to the wafer surface.
    Type: Application
    Filed: April 10, 2008
    Publication date: October 15, 2009
    Applicant: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B. V.
    Inventors: Robert E. Fontana, JR., Jordan Asher Katine, Neil Leslie Robertson, Barry Cushing Stipe, Timothy Carl Strand, Bruce David Terris
  • Patent number: 7602000
    Abstract: A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.
    Type: Grant
    Filed: November 19, 2003
    Date of Patent: October 13, 2009
    Assignee: International Business Machines Corporation
    Inventors: Jonathan Zanhong Sun, Rolf Allenspach, Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Bruce David Terris