Patents by Inventor Bruce Davies

Bruce Davies has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9865590
    Abstract: A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a control electrode coupled to a control electrode interconnection region overlying the first major surface, and a second electrode coupled to a second electrode interconnection region overlying a second major surface. Each transistor cell has an approximately constant doping concentration in the channel region. A dielectric platform is used as an edge termination of an epitaxial layer to maintain substantially planar equipotential lines therein. The power transistor finds particular utility in radio frequency applications operating at a frequency greater than 500 megahertz and dissipating more than 5 watts of power. The semiconductor die and package are designed so that the power transistor can efficiently operate under such severe conditions.
    Type: Grant
    Filed: July 20, 2016
    Date of Patent: January 9, 2018
    Assignee: XENOGENIC DEVELOPMENT LIMITED LIABILITY COMPANY
    Inventor: Robert Bruce Davies
  • Patent number: 9799627
    Abstract: In one embodiment, a semiconductor package structure includes a substrate having a well region extending from a major surface. An interposer structure is attached to the substrate within the well region. The interposer structure has a major surface that is substantially co-planar with the major surface of the substrate. An electrical device is directly attached to the substrate and the interposer structure. The interposer structure can be an active device, such as a gate driver integrated circuit, or passive device structure, such as an impedance matching network.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: October 24, 2017
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Bishnu Prasanna Gogoi, Robert Bruce Davies, Phuong Le, Alexander J. Elliott
  • Publication number: 20160329320
    Abstract: A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a control electrode coupled to a control electrode interconnection region overlying the first major surface, and a second electrode coupled to a second electrode interconnection region overlying a second major surface. Each transistor cell has an approximately constant doping concentration in the channel region. A dielectric platform is used as an edge termination of an epitaxial layer to maintain substantially planar equipotential lines therein. The power transistor finds particular utility in radio frequency applications operating at a frequency greater than 500 megahertz and dissipating more than 5 watts of power. The semiconductor die and package are designed so that the power transistor can efficiently operate under such severe conditions.
    Type: Application
    Filed: July 20, 2016
    Publication date: November 10, 2016
    Inventor: Robert Bruce Davies
  • Publication number: 20160195360
    Abstract: A rifle with an upper receiver and a barrel attached to the upper receiver and including a bolt carrier, and operating, buffer, and cooling systems. The operating system includes a cylinder and a piston coupled to receive propelling gases from the barrel. As the piston moves between retracted and extended positions the bolt carrier is moved between closed and open positions. The bolt carrier includes a weight movable within a guide frame between rearward and forward limits. The buffer system includes a compression spring in a tube attached to the upper receiver in abutting engagement with the bolt carrier. A partially fluid filled cylinder is attached to a coil of the spring and includes a piston and shaft. The piston is formed so that fluid in the cylinder restricts movement in one direction and allows free movement in a second direction.
    Type: Application
    Filed: January 21, 2016
    Publication date: July 7, 2016
    Applicant: Davies Innovations Inc.
    Inventor: Robert Bruce Davies
  • Publication number: 20160056084
    Abstract: A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a control electrode coupled to a control electrode interconnection region overlying the first major surface, and a second electrode coupled to a second electrode interconnection region overlying a second major surface. Each transistor cell has an approximately constant doping concentration in the channel region. A dielectric platform is used as an edge termination of an epitaxial layer to maintain substantially planar equipotential lines therein. The power transistor finds particular utility in radio frequency applications operating at a frequency greater than 500 megahertz and dissipating more than 5 watts of power. The semiconductor die and package are designed so that the power transistor can efficiently operate under such severe conditions.
    Type: Application
    Filed: November 2, 2015
    Publication date: February 25, 2016
    Inventor: Robert Bruce Davies
  • Patent number: 9177866
    Abstract: A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a control electrode coupled to a control electrode interconnection region overlying the first major surface, and a second electrode coupled to a second electrode interconnection region overlying a second major surface. Each transistor cell has an approximately constant doping concentration in the channel region. A dielectric platform is used as an edge termination of an epitaxial layer to maintain substantially planar equipotential lines therein. The power transistor finds particular utility in radio frequency applications operating at a frequency greater than 500 megahertz and dissipating more than 5 watts of power. The semiconductor die and package are designed so that the power transistor can efficiently operate under such severe conditions.
    Type: Grant
    Filed: April 14, 2015
    Date of Patent: November 3, 2015
    Assignee: ESTIVATION PROPERTIES LLC
    Inventor: Robert Bruce Davies
  • Publication number: 20150221558
    Abstract: A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a control electrode coupled to a control electrode interconnection region overlying the first major surface, and a second electrode coupled to a second electrode interconnection region overlying a second major surface. Each transistor cell has an approximately constant doping concentration in the channel region. A dielectric platform is used as an edge termination of an epitaxial layer to maintain substantially planar equipotential lines therein. The power transistor finds particular utility in radio frequency applications operating at a frequency greater than 500 megahertz and dissipating more than 5 watts of power. The semiconductor die and package are designed so that the power transistor can efficiently operate under such severe conditions.
    Type: Application
    Filed: April 14, 2015
    Publication date: August 6, 2015
    Inventor: Robert Bruce Davies
  • Patent number: 9093300
    Abstract: A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device. Increasing the trench depth moves a region of higher field strength from the tub region to a region along the trench. The region along the trench does not have a junction and may withstand the higher field strength.
    Type: Grant
    Filed: March 4, 2014
    Date of Patent: July 28, 2015
    Assignee: Estivation Properties LLC
    Inventor: Robert Bruce Davies
  • Patent number: 9029946
    Abstract: A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a control electrode coupled to a control electrode interconnection region overlying the first major surface, and a second electrode coupled to a second electrode interconnection region overlying a second major surface. Each transistor cell has an approximately constant doping concentration in the channel region. A dielectric platform is used as an edge termination of an epitaxial layer to maintain substantially planar equipotential lines therein. The power transistor finds particular utility in radio frequency applications operating at a frequency greater than 500 megahertz and dissipating more than 5 watts of power. The semiconductor die and package are designed so that the power transistor can efficiently operate under such severe conditions.
    Type: Grant
    Filed: May 28, 2013
    Date of Patent: May 12, 2015
    Assignee: Estivation Properties LLC
    Inventor: Robert Bruce Davies
  • Publication number: 20140183623
    Abstract: A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device. Increasing the trench depth moves a region of higher field strength from the tub region to a region along the trench. The region along the trench does not have a junction and may withstand the higher field strength.
    Type: Application
    Filed: March 4, 2014
    Publication date: July 3, 2014
    Applicant: ESTIVATION PROPERTIES LLC
    Inventor: Robert Bruce Davies
  • Patent number: 8707850
    Abstract: A rifle with an upper receiver and a barrel attached to the upper receiver and including a bolt carrier, and operating, buffer, and cooling systems. The operating system includes a cylinder and a piston coupled to receive propelling gases from the barrel. As the piston moves between retracted and extended positions the bolt carrier is moved between closed and open positions. The bolt carrier includes a weight movable within a guide frame between rearward and forward limits. The buffer system includes a compression spring in a tube attached to the upper receiver in abutting engagement with the bolt carrier. A partially fluid filled cylinder is attached to a coil of the spring and includes a piston and shaft. The piston is formed so that fluid in the cylinder restricts movement in one direction and allows free movement in a second direction.
    Type: Grant
    Filed: September 3, 2012
    Date of Patent: April 29, 2014
    Inventor: Robert Bruce Davies
  • Patent number: 8697556
    Abstract: A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device. Increasing the trench depth moves a region of higher field strength from the tub region to a region along the trench. The region along the trench does not have a junction and may withstand the higher field strength.
    Type: Grant
    Filed: June 28, 2012
    Date of Patent: April 15, 2014
    Assignee: Estivation Properties LLC
    Inventor: Robert Bruce Davies
  • Publication number: 20130328132
    Abstract: A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a control electrode coupled to a control electrode interconnection region overlying the first major surface, and a second electrode coupled to a second electrode interconnection region overlying a second major surface. Each transistor cell has an approximately constant doping concentration in the channel region. A dielectric platform is used as an edge termination of an epitaxial layer to maintain substantially planar equipotential lines therein. The power transistor finds particular utility in radio frequency applications operating at a frequency greater than 500 megahertz and dissipating more than 5 watts of power. The semiconductor die and package are designed so that the power transistor can efficiently operate under such severe conditions.
    Type: Application
    Filed: May 28, 2013
    Publication date: December 12, 2013
    Applicant: Estivation Properties LLC
    Inventor: Robert Bruce Davies
  • Patent number: 8530963
    Abstract: A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a control electrode coupled to a control electrode interconnection region overlying the first major surface, and a second electrode coupled to a second electrode interconnection region overlying a second major surface. Each transistor cell has an approximately constant doping concentration in the channel region. A dielectric platform is used as an edge termination of an epitaxial layer to maintain substantially planar equipotential lines therein. The power transistor finds particular utility in radio frequency applications operating at a frequency greater than 500 megahertz and dissipating more than 5 watts of power. The semiconductor die and package are designed so that the power transistor can efficiently operate under such severe conditions.
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: September 10, 2013
    Assignee: Estivation Properties LLC
    Inventor: Robert Bruce Davies
  • Patent number: 8471378
    Abstract: A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a control electrode coupled to a control electrode interconnection region overlying the first major surface, and a second electrode coupled to a second electrode interconnection region overlying a second major surface. Each transistor cell has an approximately constant doping concentration in the channel region. A dielectric platform is used as an edge termination of an epitaxial layer to maintain substantially planar equipotential lines therein. The power transistor finds particular utility in radio frequency applications operating at a frequency greater than 500 megahertz and dissipating more than 5 watts of power. The semiconductor die and package are designed so that the power transistor can efficiently operate under such severe conditions.
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: June 25, 2013
    Assignee: Estivation Properties LLC
    Inventor: Robert Bruce Davies
  • Publication number: 20130034952
    Abstract: A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device. Increasing the trench depth moves a region of higher field strength from the tub region to a region along the trench. The region along the trench does not have a junction and may withstand the higher field strength.
    Type: Application
    Filed: June 28, 2012
    Publication date: February 7, 2013
    Inventor: Robert Bruce Davies
  • Publication number: 20120285317
    Abstract: A rifle with an upper receiver and a barrel attached to the upper receiver and including a bolt carrier, and operating, buffer, and cooling systems. The operating system includes a cylinder and a piston coupled to receive propelling gases from the barrel. As the piston moves between retracted and extended positions the bolt carrier is moved between closed and open positions. The bolt carrier includes a weight movable within a guide frame between rearward and forward limits. The buffer system includes a compression spring in a tube attached to the upper receiver in abutting engagement with the bolt carrier. A partially fluid filled cylinder is attached to a coil of the spring and includes a piston and shaft. The piston is formed so that fluid in the cylinder restricts movement in one direction and allows free movement in a second direction.
    Type: Application
    Filed: August 31, 2011
    Publication date: November 15, 2012
    Inventor: Robert Bruce Davies
  • Patent number: 8297175
    Abstract: A rifle with an upper receiver and a barrel attached to the upper receiver and including a bolt carrier, and operating, buffer, and cooling systems. The operating system includes a cylinder and a piston coupled to receive propelling gases from the barrel. As the piston moves between retracted and extended positions the bolt carrier is moved between closed and open positions. The bolt carrier includes a weight movable within a guide frame between rearward and forward limits. The buffer system includes a compression spring in a tube attached to the upper receiver in abutting engagement with the bolt carrier. A partially fluid filled cylinder is attached to a coil of the spring and includes a piston and shaft. The piston is formed so that fluid in the cylinder restricts movement in one direction and allows free movement in a second direction.
    Type: Grant
    Filed: August 31, 2011
    Date of Patent: October 30, 2012
    Inventor: Robert Bruce Davies
  • Patent number: 8230634
    Abstract: A two piece upper receiver for a firearm including a first piece having a front end, a rear end, a top, and a bottom, the first piece constructed to operatively carry a bolt carrier and bolt, and to have a barrel coupled to the front end. The bottom is constructed to have a lower receiver coupled thereto. The first piece includes a backbone extending along the top between the front end and the rear end, the back bone having upwardly directed indexing surfaces. A second piece overlies the backbone and includes mating surfaces engaging the indexing surfaces, aligning the second piece with the first piece. A receiving structure is opposite the mating surfaces for receiving accessory devices mounted thereon. Fasteners fixedly attach the second piece to the first piece to form a complete upper receiver.
    Type: Grant
    Filed: May 12, 2011
    Date of Patent: July 31, 2012
    Inventors: Robert Bruce Davies, Robert Lynch Hogan
  • Patent number: RE45185
    Abstract: A handguard system for use on a rifle having a barrel and a receiver, the hand guard system includes a barrel nut having an inner surface with a threaded portion adapted to threadably engage the receiver for securing the barrel to the receiver and an outer surface, and a tubular handguard having an end. The tubular handguard is receivable about the barrel and is received about the barrel nut, engaging the outer surface thereof. REEXAMINATION RESULTS The questions raised in reexamination proceeding No. 90/008,357, filed Dec. 1, 2006, have been considered, and the results thereof are reflected in this reissue patent which constitutes the reexamination certificate required by 35 U.S.C. 307 as provided in 37 CFR 1.570(e) for ex parte reexaminations, or the reexamination certificate required by 35 U.S.C. 316 as provided in 37 CFR 1.997(e) for inter partes reexaminations.
    Type: Grant
    Filed: February 23, 2006
    Date of Patent: October 14, 2014
    Inventor: Robert Bruce Davies