Abstract: An optical polarizer positioned before a light source for use in semiconductor wafer lithography including an array of aligned nanotubes. The array of aligned nanotubes cause light emitted from the light source and incident on the array of aligned nanotubes to be converted into polarized light for use in the semiconductor wafer lithography. The amount of polarization can be controlled by a voltage source coupled to the array of aligned nanotubes. Chromogenic material of a light filtering layer can vary the wavelength of the polarized light transmitted through the array of aligned nanotubes.

Abstract: According to one exemplary embodiment, a laser beam formatting module for use in a lithographic system to fabricate a semiconductor wafer comprises an aperture plate having, for example, a circular aperture and capable of being situated between a laser source and a target, and a lens assembly, in a light path between the aperture plate and the target. The laser beam formatting module can produce a substantially uniform laser beam intensity across a target during fabrication of a semiconductor wafer in a laser-produced plasma (LPP) lithographic process using, for example, extreme ultraviolet light (EUV). In one embodiment, a laser beam formatting module improves energy conversion efficiency, reduces out-of-band radiation emission, avoids heating of reflective optics, and eliminates the need for an out-of-band radiation filter.

Abstract: In one disclosed embodiment, the present method for determining resist suitability for semiconductor wafer fabrication comprises forming a layer of resist over a semiconductor wafer, exposing the layer of resist to patterned radiation, and determining resist suitability by using a scatterometry process prior to developing a lithographic pattern on the layer of resist. In one embodiment, the semiconductor wafer is heated in a post exposure bake process after scatterometry is performed. In one embodiment, the patterned radiation is provided by an extreme ultraviolet (EUV) light source in a lithographic process. In other embodiments, patterned radiation is provided by an electron beam, or ion beam, for example. In one embodiment, the present method determines out-gassing of a layer of resist during exposure to patterned radiation.

Abstract: A method of fabricating a semiconductor device using lithography. The method can include providing a wafer assembly having a layer to be processed disposed under a photo resist layer and illuminating the wafer assembly with an exposure dose transmitted through a birefringent material disposed between a final optical element of an imaging subsystem used to transmit the exposure dose and the photo resist layer. Also disclosed is a wafer assembly from which at least one semiconductor device can be fabricated. The wafer assembly can include a layer to be processed, a photo resist layer disposed over the layer to be processed and a contrast enhancing, birefringent top anti-reflecting coating (TARC).

Abstract: A process for fabricating a semiconductor device, including applying an immersion lithography medium to a surface of a semiconductor wafer; exposing a material on the surface of the semiconductor wafer to electromagnetic radiation having a selected wavelength; and applying supercritical carbon dioxide to the semiconductor wafer to remove the immersion lithography medium from the surface of the semiconductor wafer. In one embodiment, the process includes recovery of the immersion lithography medium.

Abstract: In one disclosed embodiment, the present method for determining resist suitability for semiconductor wafer fabrication comprises forming a layer of resist over a semiconductor wafer, exposing the layer of resist to patterned radiation, and determining resist suitability by using a scatterometry process prior to developing a lithographic pattern on the layer of resist. In one embodiment, the semiconductor wafer is heated in a post exposure bake process after scatterometry is performed. In one embodiment, the patterned radiation is provided by an extreme ultraviolet (EUV) light source in a lithographic process. In other embodiments, patterned radiation is provided by an electron beam, or ion beam, for example. In one embodiment, the present method determines out-gassing of a layer of resist during exposure to patterned radiation.

Abstract: According to one exemplary embodiment, an EUV (extreme ultraviolet) optical element in a light path between an EUV light source and a semiconductor wafer includes a reflective film having a number of bilayers. The reflective film includes a pattern, where the pattern causes a change in incident EUV light from the EUV light source, thereby controlling illumination at a pupil plane of an EUV projection optic to form a printed field on the semiconductor wafer. The EUV optical element can be utilized in an EUV lithographic process to fabricate a semiconductor die.

Abstract: According to one exemplary embodiment, a laser beam formatting module for use in a lithographic system to fabricate a semiconductor wafer comprises an aperture plate having, for example, a circular aperture and capable of being situated between a laser source and a target, and a lens assembly, in a light path between the aperture plate and the target. The laser beam formatting module can produce a substantially uniform laser beam intensity across a target during fabrication of a semiconductor wafer in a laser-produced plasma (LPP) lithographic process using, for example, extreme ultraviolet light (EUV). In one embodiment, a laser beam formatting module improves energy conversion efficiency, reduces out-of-band radiation emission, avoids heating of reflective optics, and eliminates the need for an out-of-band radiation filter.

Abstract: According to one exemplary embodiment, an optical polarizer positioned before a light source for use in semiconductor wafer lithography includes an array of aligned nanotubes. The array of aligned nanotubes cause light emitted from the light source and incident on the array of aligned nanotubes to be converted into polarized light for use in the semiconductor wafer lithography. The amount of polarization can be controlled by a voltage source coupled to the array of aligned nanotubes. Chromogenic material of a light filtering layer can vary the wavelength of the polarized light transmitted through the array of aligned nanotubes.

Abstract: A method of reflective lithography includes directing an asymmetric radiation (light) beam onto a reticle of a reflective lithography system. The asymmetry in the shape of the radiation beam may be used to compensate for a non-zero (non-normal) angle of incidence of the incident radiation. The radiation source shape may be configured to produce a substantially-symmetric output from the reticle. The shape of the radiation source may be configurable by any of a variety of suitable methods, for example by use of a configurable reflective device such as a fly's eye mirror, or by use of one or more suitable mirrors, lenses, and/or slits.

Abstract: Process and system for detection of contamination in an imaging system, including providing an imaging system having one or more element having a surface for reflecting or refracting first incident radiation; mounting with respect to at least one of the one or more element one or more detector capable of sensing third radiation emitted or transmitted by one or more contaminant on the surface of the one or more element when second radiation is absorbed by the one or more contaminant; applying the first incident radiation and/or the second radiation to the at least one element; and detecting with the one or more detector the third radiation emitted or transmitted by the one or more contaminant.

Abstract: A method and device for determining reflection lens pupil transmission distribution in a photolithographic reflective imaging system, the device including an illumination source; a reticle supporting a reflective mask layer having a plurality of light-reflecting areas and non-reflecting areas thereon; a diffuser mounted with respect to the reflective mask layer; a lens system including one or more reflective elements; and an image plane, in which a pupil image corresponding to one or more of the plurality of light-reflecting areas in the reflective mask layer is formed at or near the image plane when light from the illumination source passes through the diffuser to the reflective mask layer, reflects from the light-reflecting areas and passes through the lens system, the pupil image having a reflection lens pupil transmission distribution. The method includes obtaining a pupil image with and without the diffuser in place in the device.

Abstract: A reflective reticle includes reflective regions of different phases, with one of the reflective regions being, for example, 180 degrees out of phase with another region. The reflective reticle also includes absorptive regions, which may be placed between reflective regions of opposite phases. The reticle may include a reflector, made up of multiple reflective layers, atop a substrate of absorptive material. The reflector may have some of the reflective areas removed in the phase-shift regions, and substantially all of the reflective layers removed in the absorptive regions. The reticle may allow for greater resolution extreme ultraviolet (EUV) lithography.

Abstract: A method of operating an immersion lithography system, including steps of immersing at least a portion of a wafer to be exposed in an immersion medium, wherein the immersion medium comprises at least one bubble; directing an ultrasonic wave through at least a portion of the immersion medium to disrupt and/or dissipate the at least one bubble; and exposing the wafer with an exposure pattern by passing electromagnetic radiation through the immersion medium subsequent to the directing. Also disclosed is a monitoring and control system for an immersion lithography system.

Abstract: An extreme ultraviolet (EUV) lithography mask blank. The mask blank can include a substrate having a reflector film disposed over an upper surface of the substrate. The mask blank is provided with structural features to facilitate indirect grounding of the reflector film.

Abstract: A method and device for determining projection lens pupil transmission distribution in a photolithographic imaging system, the device including an illumination source; a transmissive reticle; an aperture layer having an illumination source side and a light emission side and comprising a plurality of openings therethrough; a diffuser mounted on the illumination source side of the aperture layer; a projection lens system; and an image plane, in which a pupil image corresponding to each of the plurality of openings in the aperture layer is formed at the image plane when radiation from the illumination source passes through the reticle, the diffuser, the aperture layer and the projection lens system, the pupil image having a projection lens pupil transmission distribution.

Abstract: A method of reflective lithography includes placing an adjustable (configurable) multi-faceted mirror in a condenser that collects and redirects light from a source to a reticle, an imaging system, and finally a target to be patterned. The adjustable multi-faceted mirror has a plurality of separately adjustable mirror elements or facets. The orientation of the mirror elements may be adjusted to adjust the characteristics of the light reaching a reflective reticle in order to achieve certain imaging characteristics at the resist layer that is being exposed. For example, coherence, shape of the illumination at the pupil of the imaging system, and/or configuration of the light output may be changed. The method and a corresponding system may be employed in extreme ultraviolet light (EUVL) lithography.

Abstract: Disclosed are a method of and a system for monitoring extreme ultraviolet (EUV) lithography mask flatness. An EUV mask, which is chucked to a chuck, can be scanned with a capacitance probe that generates elevation data for the EUV mask. From the elevation data, a first flatness profile can be generated. In one embodiment, the EUV mask can be rotated and rescanned.

Abstract: In the present method of electrically testing the width of a line, a short pulse of laser energy is applied to the line to generate conductive electrons therein. An electrical potential is applied to the line to cause electrons to flow in the line, and current is measured to determine the width of the line.

Abstract: A reflective mask or reticle configured to reduce reflections from an absorptive layer during lithography at a wavelength shorter than in a deep ultraviolet (DUV) range is disclosed herein. The reflective mask or reticle is configured to generate additional reflections which have a desirable phase difference with respect to the reflections from the absorptive layer. The additional reflections reduce or eliminate the reflections from the absorptive layer by destructive interference.