Abstract: A method of forming a nitride semiconductor through ion implantation and an electronic device including the same are disclosed. In the method, an ion implantation region composed of a line/space pattern is formed on a substrate at an ion implantation dose of more than 1E17 ions/cm2 to 5E18 ions/cm2 or less and an ion implantation energy of 30˜50 keV, and a metal nitride thin film is grown on the substrate by epitaxial lateral overgrowth, thereby decreasing lattice defects in the metal nitride thin film. Thus, the electronic device has improved efficiency.

Abstract: The present invention relates to a batroxobin-encoding nucleotide sequence and/or a mutated ?-factor secretion signal sequence, and a vector and a transformant using the same. The batroxobin-encoding nucleotide sequence of this invention exhibits an excellent expression efficiency in yeast, particular Pichia pastoris and the recombinant batroxobin is obtained at 4-13 fold higher yield than natural-occurring batroxobin-encoding sequences. The protein expression system which uses the batroxobin-encoding nucleotide sequence as well as mutated ?-factor secretion signal peptide sequence of this invention obtains the recombinant batroxobin at about 20-fold higher yield than natural-occurring batroxobin-encoding sequences. In addition, the recombinant batroxobin prepared using the sequence of this invention has a significantly plausible activity and stability compared with natural-occurring batroxobin.

Abstract: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

Abstract: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

Abstract: The present invention relates to a pair of primers specific to mycobacterial species, a polynucleotide of an hsp 65 gene fragment, and a method for the identification of mycobacterial species by using the same. More specifically, the 604-bp hsp 65 gene fragment can be applied to identification methods of mycobacteria such as the comparative sequence analysis method, the probe hybridization method, and PCR-RFLP, which can resolve the problems of a conventional identification method based on bio-chemical characteristics, where the genus mycobacterium covers various species and has a low growth rate, and of the problems of 16s rDNA. Thus, according to the identification method of the present invention, the mycobacterial species can be identified simply, economically, and accurately.

Abstract: A method of forming a nitride semiconductor through ion implantation and an electronic device including the same are disclosed. In the method, an ion implantation region composed of a line/space pattern is formed on a substrate at an ion implantation dose of more than 1E17 ions/cm2 to 5E18 ions/cm2 or less and an ion implantation energy of 30˜50 keV, and a metal nitride thin film is grown on the substrate by epitaxial lateral overgrowth, thereby decreasing lattice defects in the metal nitride thin film. Thus, the electronic device has improved efficiency.

Abstract: A high quality white light emitting device suitable for miniaturization. The white light emitting device according to the present invention includes a substrate and a light emitting structure composed of an n-semiconductor layer, an active layer and a p-semiconductor layer. The light emission structure emits first emission light. The white light emitting device also includes a wavelength-converting film for absorbing and converting the first emission light to second emission light of another wavelength. The wavelength-converting film is made of europium-silicate.

Abstract: An apparatus and a method of driving a backlight unit and a display apparatus employing the same. Wherein a driving current, which is divided in a step-by-step fashion, is sequentially changed and output according to a current control signal. The current control signal is divided into low levels and high levels that are consecutively and repeatedly applied to a backlight controller. The driving current is reduced from a reference current corresponding to a number of the high levels during a time period that starts when the low level is applied for at least a first reference time interval and ends when the high level is applied for at least a second reference time interval.

Abstract: A compressor having a casing to which a gas suction pipe is connected; a driving motor provided in the casing; a cylinder; a valve supporting plate (210) covering the cylinder (300), the valve supporting plate (210) having a suction hole (212) for sucking gas into the cylinder (300) and two discharge holes (211) for discharging gas compressed in the cylinder (300); a piston (100) having two protrusions (101) at a pressure surface in correspondence to the two discharge holes (211) of the valve supporting plate (210), the protrusions (101) having different sized cross-sections, the piston being linearly reciprocal in the cylinder (300) by receiving a driving force of the driving motor; a suction valve coupled to the valve supporting plate (210) to open and close the suction hole (212); a discharge valve coupled to the valve supporting plate to open and close the two discharge holes (211).

Abstract: A detachable connecting rod includes a first member (410)a large end portion (411) having a trough hole (H1), and a first connection rod portion (412) extending from the large end portion (411), the first connection rod portion (412) having a pair of spaced apart arms defining a coupling groove (413) extending in the same direction as an axial direction of the through hole (H1); a second member (420) including a small end portion having a through hole (H2), and second connection rod portion (422) extending from the small end portion, the second connection rod (422) portion being inserted into the coupling groove (413) and a coupling unit for coupling the first connection rod portion (412) to the second connection rod portion inserted (412) into the coupling groove (413) of the first member (410). The detachable connecting rod is useable in a compressor.

Abstract: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

Abstract: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

Abstract: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

Abstract: The invention provides a method for fabricating a superlattice semiconductor structure capable of achieving excellent interfacial properties and uniformity. For the superlattice semiconductor structure according to the invention, a substrate is mounted on a susceptor within a process chamber. First and second source gases are supplied simultaneously to two different areas on the susceptor within the chamber to form first and second source gas areas separate from each other. The susceptor is rotated to revolve the substrate through the first and second source gas areas.

Abstract: Disclosed is a method for identifying Streptomyces species using groEL2 gene that can compensate for drawbacks of conventional methods of morphologic classification and 16S rDNA identification being time-consuming, unfaithful, and expensive, thus enabling to efficiently identify Streptomyces species.

Abstract: A display device includes a display panel having a resolution of a regular square and a plurality of pixels, a signal processor which stores first image signals corresponding to a first image of one frame and outputs second image signals corresponding to a second image having a display type changed with respect to the first image, and a data driver which converts the second image signals to data voltages to supply to the plurality of pixels.

Abstract: A capacitor assembly includes a first electrode, a second electrode, a dielectric portion, a body and a conductive cover. The second electrode overlaps the first electrode. The dielectric portion is interposed between the first and second electrodes. The body surrounds an outer surface of the dielectric portion, the first electrode and the second electrode, and partially exposes end portions of the first and second electrodes. The conductive cover covers a side surface of the body, and has a greater width than a width of each of the end portions of the first and second electrodes. Therefore, yield of the capacitor assembly is increased, and defects are decreased.

Abstract: The present invention relates to a liquid crystal display (“LCD”) including a display panel assembly having a liquid crystal layer, a driving voltage generator generating driving voltages for the display panel assembly, and a driving unit driving the display panel assembly based on the driving voltages. The driving voltage generator receives information about the display panel assembly from the display panel assembly or from an external device and generates the driving voltages based on the information. Thus, regardless of the characteristics of the display panel, one driving chip is commonly used for various LCDs.

Abstract: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

Abstract: A display apparatus includes first and second display panels, and first and second driver circuit parts. The first display panel includes first pixels. Each of the first pixels includes a switching element electrically connected to a gate line and a source line, and a first liquid crystal capacitor electrically connected to the switching element. The second display panel includes second pixels. Each of the second pixels includes a second liquid crystal capacitor formed by a scan electrode and a segment electrode. The segment electrode is extended along a direction crossing a longitudinal direction of the scan electrode. The first driver circuit part drives the first display panel by using first driving voltages. The second driver circuit part drives the second display panel by using second driving voltages generated by adjusting the first driving voltages.