Patents by Inventor Butch Berney
Butch Berney has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230131233Abstract: Apparatuses and methods are described. An apparatus may include a processing chamber including chamber walls, a chamber heater configured to heat the walls, a pedestal positioned within the chamber and including a substrate heater having a plurality of light emitting diodes (LEDs) configured to emit light with wavelengths in the range of 400 nanometers (nm) and 800 nm, a window positioned above the heater and having a material transparent to light with wavelengths in the range of 400 nm and 800 nm, and three or more substrate supports, each having a substrate support surface vertically offset from the window and configured to support a substrate such that the window and the substrate are offset by a nonzero distance.Type: ApplicationFiled: March 23, 2021Publication date: April 27, 2023Inventors: Nathan Lavdovsky, Butch Berney, Mark Naoshi Kawaguchi, Ji Zhu, Hongbo Si
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Publication number: 20220308462Abstract: Systems and techniques for dry deposition of extreme ultra-violet-sensitive (EUV-sensitive) photoresist layers are discussed. In some such systems, a processing chamber may be provided that features a multi-plenum showerhead that is configured to receive a vaporized organometallic precursor in one plenum and a vaporized counter-reactant thereof in another plenum. The two vaporized reactants may be delivered to a reaction space within the processing chamber and over a wafer support that supports the substrate.Type: ApplicationFiled: June 22, 2020Publication date: September 29, 2022Inventors: Butch Berney, Alan M. Schoepp, Timothy William Weidman, Kevin Li Gu, Chenghao Wu, Katie Lynn Nardi, Boris Volosskiy, Clint Edward Thomas, Thad Nicholson
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Publication number: 20210366738Abstract: A vapor delivery head for wet treatment of a substrate includes a body including an upper surface, a lower surface, an upper plenum and a lower plenum. A first bore is arranged on the upper surface of the body and fluidly connected to the upper plenum to supply heated fluid. A second bore is arranged on the upper surface of the body and connected to the upper plenum to remove heated fluid. A third bore is arranged on the upper surface of the body and connected to the lower plenum to receive a gas mixture. A plurality of through holes through the lower surface of the body are in fluid communication with the lower plenum.Type: ApplicationFiled: August 21, 2019Publication date: November 25, 2021Inventors: Bhaskar BANDARAPU, David MUI, Karl-Heinz HOHENWARTER, Butch BERNEY, Nathan LAVDOVSKY, Christian PUTZI, Hongbo SI, Robert JOHNSON, Michael KLEMM, Bernhard LOIDL
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Patent number: 10861719Abstract: An apparatus for processing wafer-shaped articles comprises a rotary chuck and a heating assembly that faces a wafer-shaped article when positioned on the rotary chuck. A liquid dispenser positioned so as to dispense liquid onto a surface of a wafer-shaped article that faces away from the rotary chuck when positioned on the rotary chuck. The heating assembly comprises an array of radiant heating elements distributed among at least five individually controllable groups. The liquid dispenser comprises one or more dispensing orifices configured to move a discharge point from a more central region of the rotary chuck to a more peripheral region of the rotary chuck. A controller controls power supplied to each of the at least five individually controllable groups of radiant heating elements based on a position of the discharge point of the liquid dispenser.Type: GrantFiled: March 26, 2020Date of Patent: December 8, 2020Assignee: Lam Research AGInventors: David Mui, Butch Berney, Alois Goller, Michael Ravkin
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Patent number: 10720343Abstract: An apparatus for processing wafer-shaped articles comprises a rotary chuck and a heating assembly that faces a wafer-shaped article when positioned on the rotary chuck. A liquid dispenser positioned so as to dispense liquid onto a surface of a wafer-shaped article that faces away from the rotary chuck when positioned on the rotary chuck. The heating assembly comprises an array of radiant heating elements distributed among at least five individually controllable groups. The liquid dispenser comprises one or more dispensing orifices configured to move a discharge point from a more central region of the rotary chuck to a more peripheral region of the rotary chuck. A controller controls power supplied to each of the at least five individually controllable groups of radiant heating elements based on a position of the discharge point of the liquid dispenser.Type: GrantFiled: May 31, 2016Date of Patent: July 21, 2020Assignee: Lam Research AGInventors: David Mui, Butch Berney, Alois Goller, Mike Ravkin
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Publication number: 20200227284Abstract: An apparatus for processing wafer-shaped articles comprises a rotary chuck and a heating assembly that faces a wafer-shaped article when positioned on the rotary chuck. A liquid dispenser positioned so as to dispense liquid onto a surface of a wafer-shaped article that faces away from the rotary chuck when positioned on the rotary chuck. The heating assembly comprises an array of radiant heating elements distributed among at least five individually controllable groups. The liquid dispenser comprises one or more dispensing orifices configured to move a discharge point from a more central region of the rotary chuck to a more peripheral region of the rotary chuck. A controller controls power supplied to each of the at least five individually controllable groups of radiant heating elements based on a position of the discharge point of the liquid dispenser.Type: ApplicationFiled: March 26, 2020Publication date: July 16, 2020Inventors: David Mui, Butch Berney, Alois Goller, Mike Ravkin
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Patent number: 10679871Abstract: An apparatus for processing wafer-shaped articles comprises a rotary chuck and a heating assembly that faces a wafer-shaped article when positioned on the rotary chuck. A liquid dispenser positioned so as to dispense liquid onto a surface of a wafer-shaped article that faces away from the rotary chuck when positioned on the rotary chuck. The heating assembly comprises an array of radiant heating elements distributed among at least five individually controllable groups. The liquid dispenser comprises one or more dispensing orifices configured to move a discharge point from a more central region of the rotary chuck to a more peripheral region of the rotary chuck. A controller controls power supplied to each of the at least five individually controllable groups of radiant heating elements based on a position of the discharge point of the liquid dispenser.Type: GrantFiled: May 31, 2016Date of Patent: June 9, 2020Assignee: Lam Research AGInventors: David Mui, Butch Berney, Alois Goller, Mike Ravkin
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Patent number: 10312117Abstract: An apparatus for processing wafer-shaped articles includes a rotary chuck adapted to hold a wafer-shaped article of a predetermined diameter thereon. A radiant heating plate faces a wafer-shaped article when positioned on the rotary chuck. The radiant heating plate includes radiant heating elements, but a central region of the radiant heating plate is free of radiant heating elements. The radiant heating plate further includes at least one refraction element that refracts radiation emitted by the radiant heating elements and passed through the at least one refraction element, toward the central region of the radiant heating plate.Type: GrantFiled: August 10, 2016Date of Patent: June 4, 2019Assignee: LAM RESEARCH AGInventors: Hongbo Si, Bridget Hill, Butch Berney, Daniel Brien
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Publication number: 20180047596Abstract: An apparatus for processing wafer-shaped articles includes a rotary chuck adapted to hold a wafer-shaped article of a predetermined diameter thereon. A radiant heating plate faces a wafer-shaped article when positioned on the rotary chuck. The radiant heating plate includes radiant heating elements, but a central region of the radiant heating plate is free of radiant heating elements. The radiant heating plate further includes at least one refraction element that refracts radiation emitted by the radiant heating elements and passed through the at least one refraction element, toward the central region of the radiant heating plate.Type: ApplicationFiled: August 10, 2016Publication date: February 15, 2018Inventors: Hongbo SI, Bridget HILL, Butch BERNEY, Daniel BRIEN
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Publication number: 20170345681Abstract: An apparatus for processing wafer-shaped articles comprises a rotary chuck and a heating assembly that faces a wafer-shaped article when positioned on the rotary chuck. A liquid dispenser positioned so as to dispense liquid onto a surface of a wafer-shaped article that faces away from the rotary chuck when positioned on the rotary chuck. The heating assembly comprises an array of radiant heating elements distributed among at least five individually controllable groups. The liquid dispenser comprises one or more dispensing orifices configured to move a discharge point from a more central region of the rotary chuck to a more peripheral region of the rotary chuck. A controller controls power supplied to each of the at least five individually controllable groups of radiant heating elements based on a position of the discharge point of the liquid dispenser.Type: ApplicationFiled: May 31, 2016Publication date: November 30, 2017Inventors: David MUI, Butch BERNEY, Alois GOLLER, Mike RAVKIN
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Patent number: 7611640Abstract: A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.Type: GrantFiled: March 30, 2006Date of Patent: November 3, 2009Assignee: Lam Research CorporationInventors: Arthur M Howald, Andras Kuthi, Andrew D. Bailey, III, Butch Berney
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Patent number: 7086347Abstract: A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.Type: GrantFiled: May 6, 2002Date of Patent: August 8, 2006Assignee: Lam Research CorporationInventors: Arthur M. Howald, Andras Kuthi, Andrew D. Bailey, III, Butch Berney
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Publication number: 20040149223Abstract: A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate.Type: ApplicationFiled: December 18, 2003Publication date: August 5, 2004Applicant: Lam Research CorporationInventors: Wenli Z. Collison, Michael S. Barnes, Tuqiang Q. Ni, Butch Berney, Wayne W. Vereb, Brian K. McMillin
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Patent number: 6692649Abstract: A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate.Type: GrantFiled: January 18, 2001Date of Patent: February 17, 2004Assignee: Lam Research CorporationInventors: Wenli Z. Collison, Michael S. Barnes, Tuqiang O. Ni, Butch Berney, Wayne W. Vereb, Brian K. McMillin
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Publication number: 20030205327Abstract: A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.Type: ApplicationFiled: May 6, 2002Publication date: November 6, 2003Inventors: Arthur M. Howald, Andras Kuthi, Andrew D. Bailey, Butch Berney
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Publication number: 20010023741Abstract: A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate.Type: ApplicationFiled: January 18, 2001Publication date: September 27, 2001Inventors: Wenli Z. Collison, Michael S. Barnes, Tuqiang O. Ni, Butch Berney, Wayne W. Vereb, Brian K. McMillin
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Publication number: 20010019903Abstract: A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.Type: ApplicationFiled: February 5, 2001Publication date: September 6, 2001Inventors: Paul Kevin Shufflebotham, Brian McMillin, Alex Demos, Huong Nguyen, Butch Berney, Monique Ben-Dor
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Patent number: 6270862Abstract: A plasma processing system for processes such as chemical vapor deposition includes a plasma processing chamber, a substrate holder for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate holder, the dielectric member forming a wall of the processing chamber a gas supply for supplying gas to the chamber, directed towards the substrate, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The gas supply may comprise a primary gas ring and a secondary gas ring for supplying gases or gas mixtures into the chamber. The gas supply may further include injectors attached to the primary gas ring which inject gas into the chamber, directed toward the substrate. The plasma processing system may also include a cooling mechanism for cooling the primary gas ring during processing.Type: GrantFiled: July 26, 1999Date of Patent: August 7, 2001Assignee: Lam Research CorporationInventors: Brian McMillin, Huong Nguyen, Michael Barnes, Butch Berney
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Patent number: 6203657Abstract: A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate.Type: GrantFiled: March 31, 1998Date of Patent: March 20, 2001Assignee: Lam Research CorporationInventors: Wenli Z. Collison, Michael S. Barnes, Tuqiang Q. Ni, Butch Berney, Wayne W. Vereb, Brian K. McMillin
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Patent number: 6184158Abstract: A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.Type: GrantFiled: December 23, 1996Date of Patent: February 6, 2001Assignee: Lam Research CorporationInventors: Paul Kevin Shufflebotham, Brian McMillin, Alex Demos, Huong Nguyen, Butch Berney, Monique Ben-Dor