Patents by Inventor Byoung Hoon Lee

Byoung Hoon Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11510144
    Abstract: An electronic system electronic device includes: an internal battery, an external battery, a memory and a plurality of function modules. The internal battery is configured to generate a first power signal. The external battery is configured to be separated from the electronic device, and to generate a second power signal. The memory is configured to operate based on the first power signal. The plurality of function modules are configured to operate based on the second power signal.
    Type: Grant
    Filed: January 25, 2021
    Date of Patent: November 22, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-taek Hong, Kwan-yong Jin, Byoung-sul Kim, Sang-hoon Lee
  • Patent number: 11498516
    Abstract: A locking apparatus of a buckle of a seat belt for vehicles includes a sector gear bracket configured to be integrally coupled to a rear pipe which is coupled to a seat cushion frame, wherein the sector gear bracket has: an arc-shaped locking hole; and a sector gear arranged along the locking hole as an internal gear; a pole bracket located at one side of the sector gear bracket, wherein the pole bracket has a shaft part which is configured to pass through the locking hole and the seat cushion frame and then be integrally coupled to a lower end of the buckle; and a lock gear arranged on the pole bracket as an external gear.
    Type: Grant
    Filed: February 23, 2021
    Date of Patent: November 15, 2022
    Assignees: HYUNDAI MOTOR COMPANY, KIA MOTORS CORPORATION, DAEWON PRECISION INDUSTRIAL CO., LTD.
    Inventors: Byeong Seon Son, Tae Hoon Lee, Sang Ho Kim, Ji Hwan Kim, Sang Hoon Park, Seon Chae Na, Byoung Tae Seo
  • Publication number: 20220348616
    Abstract: The present disclosure relates to a novel protein variant having an activity of exporting 5?-inosine monophosphate, a microorganism comprising the protein variant, and a method for preparing 5?-inosine monophosphate using the microorganism.
    Type: Application
    Filed: June 6, 2022
    Publication date: November 3, 2022
    Inventors: Jin Ah RHO, Byoung Hoon YOON, So-jung PARK, Min Ji BAEK, Ji Hye LEE
  • Publication number: 20220340940
    Abstract: The present application relates to a novel promoter and a method for producing a desired substance using the same.
    Type: Application
    Filed: September 1, 2020
    Publication date: October 27, 2022
    Inventors: Byoung Hoon YOON, Jin Sook CHANG, Seon Hye KIM, Ji Hye LEE, Sun Hyoung CHOI, Kyungrim KIM, Hyung Joon KIM
  • Patent number: 11469133
    Abstract: A bonding apparatus includes a body part; a vacuum hole disposed in the body part; a first protruding part protruding in a first direction from a first surface of the body part; a second protruding part protruding from the first surface of the body part in the first direction and spaced farther apart from a center of the first surface of the body part than the first protruding part in a second direction intersecting with the first direction; and a trench defined by the first surface of the body part and second surfaces of the first protruding part, the second surfaces protruding in the first direction from the first surface of the body part, and the trench being connected to the vacuum hole, wherein the second protruding part protrudes farther from the first surface of the body part in the first direction than the first protruding part.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: October 11, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seok Geun Ahn, Min Keun Kwak, Ji Won Shin, Sang Hoon Lee, Byoung Wook Jang
  • Patent number: 11469439
    Abstract: Various embodiments of the present invention relate to a secondary battery. The technical problem to be solved is to provide the secondary battery which can improve the insulation strength of first and second multi-tabs, by forming the first and second multi-tabs of first and second electrode assemblies symmetrically with respect to each other, and also can improve the insulation strength of the first and second multi-tabs by forming an insulating layer on the first and second multi-tabs of the first and second electrode assemblies.
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: October 11, 2022
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Byoung Kuk Kim, Dong Hyun Lee, Hyung Sik Kim, Jun Yong Lee, Kwang Soo Kim, Sung Hoon Kim, Won Sub Seo
  • Publication number: 20220267912
    Abstract: A catalyst for producing hydrogen peroxide and a preparation method therefor are provided. The catalyst for producing hydrogen peroxide according to the embodiments of the present invention comprises a carbon-based support and a catalyst moiety that is bonded to the carbon-based support and comprises an M1-N bonding structure (M1 represents a transition metal atom). The method for preparing a catalyst for producing hydrogen peroxide according to the embodiments of the present invention comprises comprises preparing a carbon-based support, providing a transition metal atom (M1) to the carbon-based support, and doping nitrogen into the carbon-based support.
    Type: Application
    Filed: July 21, 2020
    Publication date: August 25, 2022
    Inventors: Taeghwan HYEON, Yung-Eun SUNG, Heejong SHIN, Byoung-Hoon LEE, Euiyeon JUNG
  • Patent number: 11421200
    Abstract: The present disclosure relates to a microorganism of the genus Corynebacterium producing a purine nucleotide and a method for producing a purine nucleotide using the same.
    Type: Grant
    Filed: January 25, 2019
    Date of Patent: August 23, 2022
    Assignee: CJ CHEILJEDANG CORPORATION
    Inventors: Hee Ju Kim, Bo Ram Lim, Byoung Hoon Yoon, Min Ji Baek, Ji Hye Lee
  • Publication number: 20220254884
    Abstract: A semiconductor device includes an active pattern disposed on a substrate. A gate insulating film is disposed on the active pattern and extends along the active pattern. A work function adjustment pattern is disposed on the gate insulating film and extends along the gate insulating film. A gate electrode is disposed on the work function adjustment pattern. The work function adjustment pattern includes a first work function adjustment film, a second work function adjustment film that includes aluminum and wraps the first work function adjustment film, and a barrier film including titanium silicon nitride (TiSiN). A silicon concentration of the barrier film is in a range of about 30 at % or less.
    Type: Application
    Filed: October 18, 2021
    Publication date: August 11, 2022
    Inventors: Jae-Jung KIM, Sang Yong KIM, Byoung Hoon LEE, Chan Hyeong LEE
  • Patent number: 11384124
    Abstract: The present disclosure relates to a novel protein variant having an activity of exporting 5?-inosine monophosphate, a microorganism comprising the protein variant, and a method for preparing 5?-inosine monophosphate using the microorganism.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: July 12, 2022
    Assignee: CJ CHEILJEDANG CORPORATION
    Inventors: Jin Ah Rho, Byoung Hoon Yoon, So-jung Park, Min Ji Baek, Ji Hye Lee
  • Patent number: 11378108
    Abstract: Method for diagnosing a pneumatic control valve by using a positioner model includes: establishing relational expression for outputting valve stem displacement according to control pressure, the relational expression including parameters for the characteristics of a positioner, an actuator, and a valve, determining initial parameter value by adjusting the values of the parameters until the difference between a measured value for a normal operation of the pneumatic control valve and output value obtained by the relational expression is smaller than predetermined error limit, determining diagnostic parameter value by adjusting the values of the parameters until the difference between a measured value for a diagnostic operation of the pneumatic control valve and an output value obtained by the relational expression is smaller than a predetermined error limit, and comparing the initial parameter value and the diagnostic parameter value so as to determine whether the pneumatic control valve has abnormality.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: July 5, 2022
    Assignee: KOREA HYDRO & NUCLEAR POWER CO., LTD
    Inventors: Yang Seok Kim, Dae Woong Kim, Bum Nyun Kim, Young Sheop Park, Chi Yong Park, Jong Seog Kim, Hyoung Kyun Kim, Byoung Oh Lee, Ji In Kim, Nam Woo Choi, Yong Hoon Park, Hee Seung Chang, You Soo Shin
  • Publication number: 20220165861
    Abstract: A semiconductor device is provided. The semiconductor device comprising a multi-channel active pattern on a substrate, a high dielectric constant insulating layer formed along the multi-channel active pattern on the multi-channel active pattern, wherein the high dielectric constant insulating layer comprises a metal, a silicon nitride layer formed along the high dielectric constant insulating layer on the high dielectric constant insulating layer and a gate electrode on the silicon nitride layer.
    Type: Application
    Filed: February 11, 2022
    Publication date: May 26, 2022
    Inventors: Byoung Hoon LEE, Wan Don KIM, Jong Ho PARK, Sang Jin HYUN
  • Patent number: 11282939
    Abstract: A semiconductor device is provided. The semiconductor device comprising a multi-channel active pattern on a substrate, a high dielectric constant insulating layer formed along the multi-channel active pattern on the multi-channel active pattern, wherein the high dielectric constant insulating layer comprises a metal, a silicon nitride layer formed along the high dielectric constant insulating layer on the high dielectric constant insulating layer and a gate electrode on the silicon nitride layer.
    Type: Grant
    Filed: February 7, 2019
    Date of Patent: March 22, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byoung Hoon Lee, Wan Don Kim, Jong Ho Park, Sang Jin Hyun
  • Patent number: 11177364
    Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.
    Type: Grant
    Filed: July 24, 2020
    Date of Patent: November 16, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byoung-Hoon Lee, Hoon-Joo Na, Sung-In Suh, Min-Woo Song, Chan-Hyeong Lee, Hu-Yong Lee, Sang-Jin Hyun
  • Publication number: 20210119058
    Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.
    Type: Application
    Filed: December 8, 2020
    Publication date: April 22, 2021
    Inventors: Jong Ho PARK, Wan Don KIM, Weon Hong KIM, Hyeon Jun BAEK, Byoung Hoon LEE, Jeong Hyuk YIM, Sang Jin HYUN
  • Patent number: 10879392
    Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: December 29, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong Ho Park, Wan Don Kim, Weon Hong Kim, Hyeon Jun Baek, Byoung Hoon Lee, Jeong Hyuk Yim, Sang Jin Hyun
  • Publication number: 20200365706
    Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.
    Type: Application
    Filed: July 24, 2020
    Publication date: November 19, 2020
    Inventors: Byoung-Hoon Lee, HOON-JOO NA, SUNG-IN SUH, MIN-WOO SONG, CHAN-HYEONG LEE, HU-YONG LEE, SANG-JIN HYUN
  • Patent number: 10770560
    Abstract: A semiconductor device according to an example embodiment of the present inventive concept includes a substrate having a first region and a second region horizontally separate from the first region; a first gate line in the first region, the first gate line including a first lower work function layer and a first upper work function layer disposed on the first lower work function layer; and a second gate line including a second lower work function layer in the second region, the second gate line having a width in a first, horizontal direction equal to or narrower than a width of the first gate line in the first direction, wherein an uppermost end of the first upper work function layer and an uppermost end of the second lower work function layer are each located at a vertical level higher than an uppermost end of the first lower work function layer with respect to a second direction perpendicular to the first direction.
    Type: Grant
    Filed: December 10, 2018
    Date of Patent: September 8, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jeong Hyuk Yim, Kug Hwan Kim, Wan Don Kim, Jung Min Park, Jong Ho Park, Byoung Hoon Lee, Yong Ho Ha, Sang Jin Hyun, Hye Ri Hong
  • Patent number: 10756195
    Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.
    Type: Grant
    Filed: November 2, 2018
    Date of Patent: August 25, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byoung-Hoon Lee, Hoon-Joo Na, Sung-In Suh, Min-Woo Song, Chan-Hyeong Lee, Hu-Yong Lee, Sang-Jin Hyun
  • Patent number: RE49159
    Abstract: A method and apparatus of transmitting a reference signal in a wireless communication system is provided. The method includes generating a precoded reference signal or a non-precoded reference signal in accordance with a rank, and transmitting the generated reference signal. Uplink transmission using multiple transmit antennas is supported through reference signal design and related control signaling.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: August 2, 2022
    Assignee: LG Electronics Inc.
    Inventors: Byoung-Hoon Kim, Dae Won Lee, Byeongwoo Kang, Bong Hoe Kim, Yujin Noh