Abstract: A semiconductor device structure, for example a 3D structure, and a method for fabricating a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for manufacturing thereof, that comprise interposer, interlayer, and/or heat dissipater configurations that provide for low cost, increased manufacturability, and high reliability.

Abstract: A semiconductor package is provided. The semiconductor package may include a substrate, a chip stack disposed on the substrate, the chip stack including a plurality of semiconductor chips, a plurality of bonding wires electrically connecting the substrate to the plurality of semiconductor chips, a reinforcement layer disposed on the chip stack, and a molding layer surrounding side surfaces of the chip stack and the bonding wires and contacting side surfaces of the reinforcement layer. The reinforcement layer may include a lower layer including an adhesive, an intermediate layer disposed on the lower layer, and an upper layer disposed on the intermediate layer. The intermediate layer may have elongation in a range of 5% to 70%. The upper layer may have elongation less than 5%.

Abstract: A semiconductor device structure, for example a 3D structure, and a method for fabricating a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for manufacturing thereof, that comprise interposer, interlayer, and/or heat dissipater configurations that provide for low cost, increased manufacturability, and high reliability.

Abstract: A semiconductor package is provided. The semiconductor package may include a substrate, a chip stack disposed on the substrate, the chip stack including a plurality of semiconductor chips, a plurality of bonding wires electrically connecting the substrate to the plurality of semiconductor chips, a reinforcement layer disposed on the chip stack, and a molding layer surrounding side surfaces of the chip stack and the bonding wires and contacting side surfaces of the reinforcement layer. The reinforcement layer may include a lower layer including an adhesive, an intermediate layer disposed on the lower layer, and an upper layer disposed on the intermediate layer. The intermediate layer may have elongation in a range of 5% to 70%. The upper layer may have elongation less than 5%.

Abstract: A semiconductor device structure, for example a 3D structure, and a method for fabricating a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for manufacturing thereof, that comprise interposer, interlayer, and/or heat dissipater configurations that provide for low cost, increased manufacturability, and high reliability.

Abstract: A semiconductor device structure, for example a 3D structure, and a method for fabricating a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for manufacturing thereof, that comprise interposer, interlayer, and/or heat dissipater configurations that provide for low cost, increased manufacturability, and high reliability.

Abstract: A semiconductor device structure, for example a 3D structure, and a method for fabricating a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for manufacturing thereof, that comprise interposer, interlayer, and/or heat dissipater configurations that provide for low cost, increased manufacturability, and high reliability.

Abstract: A semiconductor device structure, for example a 3D structure, and a method for fabricating a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for manufacturing thereof, that comprise interposer, interlayer, and/or heat dissipater configurations that provide for low cost, increased manufacturability, and high reliability.

Abstract: A semiconductor device structure, for example a 3D structure, and a method for fabricating a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for manufacturing thereof, that comprise interposer, interlayer, and/or heat dissipater configurations that provide for low cost, increased manufacturability, and high reliability.

Abstract: A semiconductor device structure, for example a 3D structure, and a method for fabricating a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for manufacturing thereof, that comprise interposer, interlayer, and/or heat dissipater configurations that provide for low cost, increased manufacturability, and high reliability.

Abstract: A singulated substrate for a semiconductor device may include a singulated unit substrate comprising circuit patterns on a top surface and a bottom surface of the singulated unit substrate. A semiconductor die may be bonded to the top surface of the singulated unit substrate. An encapsulation layer may encapsulate the semiconductor die and cover the top surface of the singulated unit substrate. The side surfaces of the singulated unit substrate between the top surface and bottom surface of the singulated unit substrate may be coplanar with side surfaces of the encapsulation layer. The semiconductor die may be electrically coupled to the singulated unit substrate utilizing solder bumps. Solder balls may be formed on the circuit patterns on the bottom surface of the singulated unit substrate. An underfill material may be formed between the semiconductor die and the top surface of the singulated unit substrate.