Abstract: A semiconductor device is provided. The semiconductor device comprising a multi-channel active pattern on a substrate, a high dielectric constant insulating layer formed along the multi-channel active pattern on the multi-channel active pattern, wherein the high dielectric constant insulating layer comprises a metal, a silicon nitride layer formed along the high dielectric constant insulating layer on the high dielectric constant insulating layer and a gate electrode on the silicon nitride layer.

Abstract: Disclosed is an electrode assembly, a battery, and a battery pack and a vehicle including the same. In the electrode assembly, a first electrode, a second electrode, and a separator interposed therebetween are wound based on an axis to define a core and an outer circumference. The first electrode includes an uncoated portion at a long side end thereof and exposed out of the separator along a winding axis direction of the electrode assembly. A part of the uncoated portion is bent in a radial direction of the electrode assembly to form a bending surface region that includes overlapping layers of the uncoated portion, and in a partial region of the bending surface region, the number of stacked layers of the uncoated portion is 10 or more in the winding axis direction of the electrode assembly.

Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.

Abstract: The present invention relates to a pharmaceutical composition for diagnosing and treating prostate cancer, capable of targeting PSMA, and a compound provided by one aspect of the present invention has a glutamine-urea-lysine compound to which a radioactive metal-coupled chelator is structurally coupled and to which an aryl group that can additionally bind to PSMA protein is coupled. Coupling between the glutamine-urea-lysine compound and the chelator includes a polar spacer so as to serve the role of reducing in vivo nonspecific coupling and exhibit an effect of being rapidly removed from vital organs, but not from prostate cancer. These characteristics lower the radiation exposure, which is caused by a therapeutic radioisotope-coupled compound, to normal tissue and organs, and thus reduce side effects. In addition, a compound that contains a phenyl group having a coupling force with albumin has an increased residence time in the blood, thereby becoming more accumulated in prostate cancer.

Abstract: The present invention provides a dent-resistant cold-rolled steel sheet having excellent dent-resistance properties. According to one embodiment of the present invention, the dent-resistant cold-rolled steel sheet includes, by weight, carbon (C): 0.005% to 0.03%, manganese (Mn): 1.0% to 2.5%, aluminum (Al): 0.2% to 0.8%, sum of chromium (Cr) and molybdenum (Mo): 0.3% to 1.5%, sum of niobium (Nb) and titanium (Ti): 0.001% to 0.01%, phosphorus (P): greater than 0% to 0.02%, sulfur (S): greater than 0% to 0.01%, and the balance of iron (Fe) and other unavoidable impurities, wherein a yield strength (YP) of 195 MPa or greater, a tensile strength (ST) of 340 MPa or greater, elongation (El) of 33% or greater, and a bake hardening (BH) amount of 40 MPa or greater are satisfied.

Abstract: Disclosed is a cover including a receiving portion having a space defined for receiving an electronic device, a covering portion, and a hinge portion connecting the receiving portion and the covering portion and allowing the covering portion to pivot. The covering portion includes, in a state in which the covering portion is pivoted in a specified direction about the hinge portion to at least partially cover the space, a light guiding member disposed on the first surface for guiding light, and an outer cover layer disposed on a second surface opposite to the first surface. In addition, various embodiments understood through the specification are possible.

Abstract: Disclosed is a cover including a receiving portion having a space defined for receiving an electronic device, a covering portion, and a hinge portion connecting the receiving portion and the covering portion and allowing the covering portion to pivot. The covering portion includes, in a state in which the covering portion is pivoted in a specified direction about the hinge portion to at least partially cover the space, a light guiding member disposed on the first surface for guiding light, and an outer cover layer disposed on a second surface opposite to the first surface. In addition, various embodiments understood through the specification are possible.

Abstract: Disclosed are a memory system for a data swap and an operating method thereof. A memory system may include a plurality of layers coupled through at least one through silicon via (TSV) channel and a swap controller configured to generate a swap control command in response to a request received from an external host and to device swap data into a plurality of data units having a predetermined size to perform a swap operation between a first layer and a second layer among the plurality of layers, wherein the first layer and the second layer include at least one swap buffer and control a movement of the plurality of data units in response to the swap control command.