Patents by Inventor Byung-Du Ahn

Byung-Du Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10409126
    Abstract: A thin film transistor includes a gate electrode, a first insulating layer disposed to cover the gate electrode, a semiconductor layer disposed on the first insulating layer that includes a first side surface portion, a source electrode disposed on the semiconductor layer, and a drain electrode disposed on the first insulating layer that includes a second side surface portion. The first side surface portion makes contact with the second side surface portion.
    Type: Grant
    Filed: March 1, 2013
    Date of Patent: September 10, 2019
    Assignees: SAMSUNG DISPLAY CO., LTD., KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION
    Inventors: Jihun Lim, Byung Du Ahn, Gun Hee Kim, Junhyun Park, Jehun Lee, Jaewoo Park, Dae Hwan Kim, Hyunkwang Jung, Jaehyeong Kim
  • Publication number: 20190206978
    Abstract: A display device includes a substrate including a first pixel region, a second pixel region having an area smaller than that of the first pixel region, and a peripheral region surrounding the first pixel region and the second pixel region, a second pixel provided in the second pixel region, a second line connected to the second pixel, an extension line extended to the peripheral region, a dummy part located in the peripheral region to overlap with the extension line, a power line connected to the first and second pixel regions, and a connection line located in the peripheral region to be connected to the dummy part, the connection line being electrically connected to a portion of the second pixel region, wherein the second pixel region includes a first sub-pixel region connected to the connection line and a second sub-pixel region except the first sub-pixel region.
    Type: Application
    Filed: March 11, 2019
    Publication date: July 4, 2019
    Inventors: Keon Woo KIM, Ji Hyun KA, Tae Hoon KWON, Ho Kyoon KWON, Min Ku LEE, Zail LHEE, Jin Tae JEONG, Seung Ji CHA, Byung Du AHN, Jeong Ho LEE
  • Patent number: 10319745
    Abstract: A display panel comprises a substrate, a gate line, a data line insulated from the gate line, a thin film transistor electrically connected to the gate line and the data line, wherein the thin film transistor comprises a gate electrode group formed on the substrate, a gate insulating film formed on the gate electrode group, an active layer formed on the gate insulating film to at least partially overlap the gate electrode group and a source electrode and a drain electrode formed on the active layer so as to be spaced apart from each other, wherein the gate electrode group includes a first gate electrode formed on the substrate, a second gate electrode formed on the first gate electrode, and an insulating layer between the first gate electrode and the second gate electrode, and wherein the first gate electrode has reflectivity higher than that of the second gate electrode.
    Type: Grant
    Filed: July 30, 2015
    Date of Patent: June 11, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Dae Young Lee, Byung Du Ahn, Jung Gun Nam, Gug Rae Jo
  • Patent number: 10256091
    Abstract: The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])?0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>0.5. [In]/([In]+[Zn]+[Sn])?0.3??(1), [In]/([In]+[Zn]+[Sn])?1.4×{[Zn]/([Zn]+[Sn])}?0.5??(2), [Zn]/([In]+[Zn]+[Sn])?0.83??(3), and 0.1?[In]/([In]+[Zn]+[Sn])??(4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.
    Type: Grant
    Filed: October 11, 2016
    Date of Patent: April 9, 2019
    Assignees: Kobe Steel, Ltd., Samsung Display Co., Ltd.
    Inventors: Hiroaki Tao, Aya Miki, Shinya Morita, Satoshi Yasuno, Toshihiro Kugimiya, Jae Woo Park, Je Hun Lee, Byung Du Ahn, Gun Hee Kim
  • Patent number: 10229964
    Abstract: A display device includes a substrate including a first pixel region, a second pixel region having an area smaller than that of the first pixel region, and a peripheral region surrounding the first pixel region and the second pixel region, a second pixel provided in the second pixel region, a second line connected to the second pixel, an extension line extended to the peripheral region, a dummy part located in the peripheral region to overlap with the extension line, a power line connected to the first and second pixel regions, and a connection line located in the peripheral region to be connected to the dummy part, the connection line being electrically connected to a portion of the second pixel region, wherein the second pixel region includes a first sub-pixel region connected to the connection line and a second sub-pixel region except the first sub-pixel region.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: March 12, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Keon Woo Kim, Ji Hyun Ka, Tae Hoon Kwon, Ho Kyoon Kwon, Min Ku Lee, Zail Lhee, Jin Tae Jeong, Seung Ji Cha, Byung Du Ahn, Jeong Ho Lee
  • Publication number: 20180240856
    Abstract: A display device includes a substrate including a first pixel region, a second pixel region having an area smaller than that of the first pixel region, and a peripheral region surrounding the first pixel region and the second pixel region, a second pixel provided in the second pixel region, a second line connected to the second pixel, an extension line extended to the peripheral region, a dummy part located in the peripheral region to overlap with the extension line, a power line connected to the first and second pixel regions, and a connection line located in the peripheral region to be connected to the dummy part, the connection line being electrically connected to a portion of the second pixel region, wherein the second pixel region includes a first sub-pixel region connected to the connection line and a second sub-pixel region except the first sub-pixel region.
    Type: Application
    Filed: December 5, 2017
    Publication date: August 23, 2018
    Inventors: Keon Woo Kim, Ji Hyun Ka, Tae Hoon Kwon, Ho Kyoon Kwon, Min Ku Lee, Zail Lhee, Jin Tae Jeong, Seung Ji Cha, Byung Du Ahn, Jeong Ho Lee
  • Patent number: 10014172
    Abstract: A thin film transistor including a gate electrode; an active layer insulated from the gate electrode; a source electrode and a drain electrode that are insulated from the gate electrode and are electrically connected to the active layer; a first etch stopper layer that is formed of an insulation material and contacts a portion of the active layer located between areas of the active layer that are electrically connected to the source electrode and the drain electrode; a second etch stopper layer on the first etch stopper layer, the second etch stopper layer being formed of an insulation material of a same type as the insulation material used to form the first etch stopper layer, the second etch stopper layer having a higher density than the first etch stopper layer; and a third etch stopper layer on the second etch stopper layer.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: July 3, 2018
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Byung-Du Ahn, Tae-Young Kim, Yeon-Gon Mo
  • Patent number: 9685122
    Abstract: A pixel circuit and a display device having the pixel circuit are disclosed. One inventive aspect includes a switching thin-film TFT and a light sensing TFT. The switching thin-film TFT includes a first source electrode electrically connected to a data line. A first gate electrode of the switching thin-film TFT and a second source electrode of the light sensing TFT are electrically connected to a first gate line. A first drain electrode of the switching thin-film TFT and a second drain electrode of the light sensing TFT are electrically connected to a pixel electrode.
    Type: Grant
    Filed: November 19, 2014
    Date of Patent: June 20, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Ji-Hun Lim, Hyeon-Sik Kim, Yeon-Gon Mo, Byung-Du Ahn, Hyang-Shik Kong
  • Patent number: 9660089
    Abstract: A thin film transistor substrate includes a substrate, a data line disposed on the substrate and which extends substantially in a predetermined direction, a light blocking layer disposed on the substrate and including a metal oxide including zinc manganese oxide, zinc cadmium oxide, zinc phosphorus oxide or zinc tin oxide, a gate electrode disposed on the light blocking layer, a signal electrode including a source electrode and a drain electrode spaced apart from the source electrode, where the source electrode is connected to the data line, and a semiconductor pattern disposed between the source electrode and the drain electrode.
    Type: Grant
    Filed: August 25, 2014
    Date of Patent: May 23, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD
    Inventors: Byung-Du Ahn, Ji-Hun Lim, Jin-Hyun Park, Hyun-Jae Kim
  • Patent number: 9583633
    Abstract: In an oxide for a semiconductor layer of a thin film transistor according to the present invention, wherein metal elements constituting the oxide are In, Zn, and Sn, an oxygen partial pressure is 15% by volume or more when depositing the oxide in the semiconductor layer of the thin film transistor, and a defect density of the oxide satisfies 7.5×1015cm?3 or less, and a mobility satisfies 15 cm2/Vs or more.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: February 28, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Byung Du Ahn, Gun Hee Kim, Yeon-Hong Kim, Jin Hyun Park, Shuji Kosaka, Kazushi Hayashi
  • Publication number: 20170053800
    Abstract: The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])?0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>0.5. [In]/([In]+[Zn]+[Sn])?0.3 - - - (1), [In]/([In]+[Zn]+[Sn])?1.4×{[Zn]/([Zn]+[Sn])}?0.5 - - - (2), [Zn]/([In]+[Zn]+[Sn])?0.83 - - - (3), and 0.1?[In]/([In]+[Zn]+[Sn]) - - - (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.
    Type: Application
    Filed: October 11, 2016
    Publication date: February 23, 2017
    Applicants: KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel, Ltd.), Samsung Display Co., Ltd.
    Inventors: Hiroaki TAO, Aya MIKI, Shinya MORITA, Satoshi YASUNO, Toshihiro KUGIMIYA, Jae Woo PARK, Je Hun LEE, Byung Du AHN, Gun Hee KIM
  • Patent number: 9570624
    Abstract: A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer, an oxide buffer layer, a protective layer, and source and drain electrodes. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate. The oxide semiconductor layer is formed on the gate insulating layer and includes a source, a channel and a drain region. The oxide buffer layer is formed on the oxide semiconductor layer, and has a carrier concentration lower than that of the oxide semiconductor layer. The protective layer is formed on the oxide buffer layer and the gate insulating layer, and has contact holes formed therein so that the oxide buffer layer in the source and drain regions are exposed therethrough. The source and drain electrodes are coupled with the oxide buffer layer in the source and drain regions through the contact holes.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: February 14, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Woong-Hee Jeong, Sun-Kwang Kim, Hyeon-Sik Kim, Byung-Du Ahn, Chaun-Gi Choi
  • Patent number: 9553201
    Abstract: The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.
    Type: Grant
    Filed: February 12, 2014
    Date of Patent: January 24, 2017
    Assignees: Samsung Display Co., Ltd., Kobe Steel, Ltd.
    Inventors: Byung Du Ahn, Ji Hun Lim, Gun Hee Kim, Kyoung Won Lee, Je Hun Lee, Hiroshi Goto, Aya Miki, Shinya Morita, Toshihiro Kugimiya, Yeon Hong Kim, Yeon Gon Mo, Kwang Suk Kim
  • Patent number: 9548034
    Abstract: A display device includes a first pixel coupled to a first scan line and a first data line. The first pixel includes a switching transistor including a control terminal connected to the first scan line and an input terminal connected to the first data line, and is turned on by an on-scan signal, a first transistor including a first control terminal connected to the first scan line, a first input terminal connected to the first data line, and a first output terminal connected to the first control terminal; and a second transistor including a second control terminal connected to the first output terminal, a second input terminal receiving a base voltage, and a second output terminal connected to the second control terminal. The first and second transistors respectively convert light into first and second currents outputted respectively to the first and second output terminals in response to an off-scan signal.
    Type: Grant
    Filed: May 18, 2015
    Date of Patent: January 17, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Ji Hun Lim, Hyun Jae Na, Dong Hwan Shim, Byung Du Ahn
  • Patent number: 9508856
    Abstract: Provided is a thin film transistor wherein the shape of a protrusion formed on the interface between an oxide semiconductor layer and a protection film is suitably controlled, and stable characteristics are achieved. This thin film transistor is characterized in that: the thin film transistor has an oxide semiconductor layer formed of an oxide containing at least In, Zn and Sn as metal elements, and a protection film directly in contact with the oxide semiconductor layer; and the maximum height of a protrusion formed on the oxide semiconductor layer surface directly in contact with the protection film is less than 5 nm.
    Type: Grant
    Filed: October 15, 2013
    Date of Patent: November 29, 2016
    Assignees: Kobe Steel, Ltd., Samsung Display Co., Ltd.
    Inventors: Hiroaki Tao, Takeaki Maeda, Aya Miki, Toshihiro Kugimiya, Byung Du Ahn, So Young Koo, Gun Hee Kim
  • Patent number: 9508857
    Abstract: A thin film transistor display panel a includes a transparent substrate; a gate electrode positioned on the substrate; a gate insulating layer positioned on the gate electrode; a semiconductor layer positioned on the gate insulating layer and including a channel region; a source electrode and a drain electrode positioned on the semiconductor layer and facing each other; and a passivation layer configured to cover the source electrode, the drain electrode, and the semiconductor layer, wherein the semiconductor layer includes a relatively thick first portion between the source electrode and the gate electrode and a relatively thinner second portion between the drain electrode and the gate electrode overlap, the relatively thick first portion being sufficiently thick to substantially reduce a charge trapping phenomenon that may otherwise occur at a gate electrode to gate dielectric interface if the first portion were as thin as the second portion.
    Type: Grant
    Filed: March 2, 2015
    Date of Patent: November 29, 2016
    Assignees: SAMSUNG DISPLAY CO., LTD., KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION
    Inventors: Byung Du Ahn, Ji Hun Lim, Jun Hyung Lim, Dae Hwan Kim, Jae Hyeong Kim, Je Hun Lee, Hyun Kwang Jung
  • Patent number: 9502246
    Abstract: A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: November 22, 2016
    Assignees: Samsung Display Co., Ltd., University-Industry Foundation (UIF), Yonsei University
    Inventors: Yeon-Hong Kim, Byung-Du Ahn, Hyeon-Sik Kim, Yeon-Gon Mo, Ji-Hun Lim, Hyun-Jae Kim
  • Patent number: 9470978
    Abstract: A passivation layer solution composition is provided. A passivation layer solution composition according to an exemplary embodiment of the present invention includes an organic siloxane resin represented by Chemical Formula 1 below. In Chemical Formula 1, R is at least one substituent selected from a saturated hydrocarbon or an unsaturated hydrocarbon having from 1 to about 25 carbon atoms, and x and y may each independently be from 1 to about 200, and wherein each wavy line indicates a bond to an H atom or to an x siloxane unit or a y siloxane unit, or a bond to an x siloxane unit or a y siloxane unit of another siloxane chain comprising x siloxane units or y siloxane units or a combination thereof.
    Type: Grant
    Filed: October 28, 2014
    Date of Patent: October 18, 2016
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Byung Du Ahn, Seung Ho Yeon, Sei-Yong Park, Mi-Hyae Park, Bu Sop Song, Tae Gweon Lee, Jun Hyun Park, Je Hun Lee, Jae Woo Park
  • Patent number: 9449990
    Abstract: Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower.
    Type: Grant
    Filed: August 30, 2013
    Date of Patent: September 20, 2016
    Assignees: KOBE STEEL, LTD., Samsung Display Co., Ltd.
    Inventors: Aya Miki, Shinya Morita, Hiroshi Goto, Hiroaki Tao, Toshihiro Kugimiya, Byung Du Ahn, Gun Hee Kim, Jin Hyun Park, Yeon Hong Kim
  • Publication number: 20160211384
    Abstract: In an oxide for a semiconductor layer of a thin film transistor according to the present invention, wherein metal elements constituting the oxide are In, Zn, and Sn, an oxygen partial pressure is 15% by volume or more when depositing the oxide in the semiconductor layer of the thin film transistor, and a defect density of the oxide satisfies 7.5×1015cm?3 or less, and a mobility satisfies 15 cm2/Vs or more.
    Type: Application
    Filed: February 27, 2014
    Publication date: July 21, 2016
    Inventors: BYUNG DU AHN, GUN HEE KIM, YEON-HONG KIM, JIN HYUN PARK, SHUJI KOSAKA, KAZUSHI HAYASHI