Abstract: A double level gate layer with an undercut lower gate layer can be formed by using the etching rate difference between the upper gate layer and the lower gate layer in a polycrystalline Si type TFT LCD that has P-channel TFTs and N-channel TFTs. An LDD structure can be easily formed by using an upper gate layer as ion implant mask during the N-type ion implantation. LDD size is decided by the skew size between the upper gate layer and the lower gate layer. Furthermore, a photolithography step necessary for masking the ion implantation can be skipped.

Abstract: The present invention relates to a thin film transistor-liquid crystal display (hereinafter referred to as a TFT-LCD) and a manufacturing method thereof. An amorphous silicon is deposited on a substrate. The amorphous silicon is transformed into a poly silicon by method of solid phase crystallization, and the first poly silicon layer pattern is formed by etching. An amorphous silicon is deposited on the first poly silicon layer pattern. The amorphous silicon is transformed into a second poly silicon layer by method of solid phase crystallization.

Abstract: A double level gate layer with an undercut lower gate layer can be formed by using the etching rate difference between the upper gate layer and the lower gate layer in a polycrystalline Si type TFT LCD that has P-channel TFTs and N-channel TFTs. An LDD structure can be easily formed by using an upper gate layer as ion implant mask during the N-type ion implantation. LDD size is decided by the skew size between the upper gate layer and the lower gate layer. Furthermore, a photolithography step necessary for masking the ion implantation can be skipped.

Abstract: The present invention relates to a thin film transistor-liquid crystal display (hereinafter referred to as a TFT-LCD) and a manufacturing method thereof.An amorphous silicon is deposited on a substrate. The amorphous silicon is transformed into a poly silicon by method of solid phase crystallization, and the first poly silicon layer pattern is formed by etching. An amorphous silicon is deposited on the first poly silicon layer pattern. The amorphous silicon is transformed into a second poly silicon layer by method of solid phase crystallization.

Abstract: A liquid crystal display including a driving circuit is provided. The LCD in which one gate line is driven by both left and right gate drivers includes a couple of switching means which are placed between the gate driver and gate line, the couple of switching means being activated and deactivated by switching control signals to switch the output of the gate driver. When one of the gate drivers does not operate, the output of the gate driver having the operational problem is prevented from being applied to the gate lines, by a switching operation. Therefore, even when only one of gate drivers operates, the display panel can function properly, thereby preventing the lowering of picture quality and improving product yield.

Abstract: A method of manufacturing a semiconductor device having enhanced hydrogenation effect using a refractory metal capping layer formed over a plasma nitride layer, whereby hydrogen from the plasma nitride layer is diffused into a semiconductor transistor structure under heat treatment.