Patents by Inventor Byung-Jun Park

Byung-Jun Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SELF-PIERCING RIVET
    Publication number: 20130094924
    Abstract: A self-piercing rivet is disclosed. The self-piercing rivet integrally joins an upper plate member and a lower plate member overlapped with each other. The self-piercing rivet includes: a head portion; and a shank portion integrally connected to the head portion and provided with more than two slits.
    Type: Application
    Filed: December 14, 2011
    Publication date: April 18, 2013
    Applicant: SUNGWOO HITECH CO., LTD.
    Inventors: Mun-Yong Lee, Byung-Jun Park
  • METHOD OF MANUFACTURING IMAGE SENSOR HAVING BACKSIDE ILLUMINATION STRUCTURE
    Publication number: 20130017646
    Abstract: A method of manufacturing an image sensor having a backside illumination (BSI) structure includes forming a wiring unit on a front side of a semiconductor substrate, forming an anti-reflective layer in an active pixel sensor (APS) region on a back side of the semiconductor substrate, a photodiode being between the back and front sides of the semiconductor substrate, forming an etch stopping layer on the anti-reflective layer, forming an interlayer insulating layer on the etch stopping layer, the interlayer insulating layer having an etch selectivity with respect to the etch stopping layer, and etching the interlayer insulating layer in the APS region using the etch stopping layer as an etch stopping point.
    Type: Application
    Filed: May 22, 2012
    Publication date: January 17, 2013
    Inventors: Sang-hoon KIM, Byung-jun PARK, Hee-chul AN
  • DIFFUSER STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20130008005
    Abstract: A diffuser structure and a manufacturing method thereof are disclosed. The diffuser structure includes a substrate, a plurality of throughholes, and a glue layer. The throughholes are perpendicularly formed in the substrate. Each throughhole includes a gas-in part, a gas-out part, and a connecting part for connecting the gas-in part to the gas-out part. The glue layer is formed on a side wall of each gas-out part, and a thickness of the glue layer is between 1 ?m and 11 ?m. The present invention can solve a problem that particles are periodically generated after a periodic self-cleaning function is implemented in a plasma-enhanced chemical vapor deposition system.
    Type: Application
    Filed: September 11, 2012
    Publication date: January 10, 2013
    Applicant: Global Material Science Co., LTD.
    Inventors: Byung-jun Park, Jin-jong Su, Fang-yu Liu
  • IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
    Publication number: 20120238051
    Abstract: The image sensor includes a substrate; a wiring structure formed on a front side of the substrate and including a plurality of wiring layers and a plurality of insulating films; a first well formed within the substrate and having a first conductivity type; and a first metal wiring layer directly contacting a backside of the substrate and configured to apply a first well bias to the first well.
    Type: Application
    Filed: June 4, 2012
    Publication date: September 20, 2012
    Applicant: Samsung Electronics Co., Ltd.
    Inventor: Byung Jun PARK
  • CMOS IMAGE SENSORS AND RELATED DEVICES AND FABRICATION METHODS
    Publication number: 20120175720
    Abstract: An image sensor device includes a substrate including a light sensing region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed.
    Type: Application
    Filed: March 9, 2012
    Publication date: July 12, 2012
    Inventor: Byung-Jun PARK
  • Image sensor and method of fabricating the same
    Patent number: 8217484
    Abstract: The image sensor includes a substrate; a wiring structure formed on a front side of the substrate and including a plurality of wiring layers and a plurality of insulating films; a first well formed within the substrate and having a first conductivity type; and a first metal wiring layer directly contacting a backside of the substrate and configured to apply a first well bias to the first well.
    Type: Grant
    Filed: March 26, 2010
    Date of Patent: July 10, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Byung Jun Park
  • Image sensor, substrate for the same, image sensing device including the image sensor, and associated methods
    Patent number: 8207590
    Abstract: A method of fabricating a CMOS image sensor includes forming a substrate structure that includes a first substrate, a second substrate, and an index matching layer containing nitrogen and an oxide layer between the first and second substrates, and, forming at least one light-sensing device in the second substrate, and after forming the substrate structure, forming a metal interconnection structure on a first surface of the second substrate, the first surface facing away from the first substrate, such that the at least one light sensing device is between the metal interconnection structure and the index matching layer and the oxide layer, the metal interconnection structure being electrically connected to the at least one light-sensing device.
    Type: Grant
    Filed: June 29, 2009
    Date of Patent: June 26, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-Jun Park, Sang-Hee Kim
  • Apparatus and method of setting multi-channels in network system
    Patent number: 8170568
    Abstract: An apparatus of setting multi-channels in a network system includes a mobile station transmitting at least one piece of channel information on a request message, wherein the request message requests to set a connection identifier for a communication service; and a control station calculating a bandwidth according to number of channels using the request message received from the mobile station and setting the calculated bandwidth as a service bandwidth of the connection identifier. The control station such as an ACR supports multi-channels through one frame structure (i.e., a communication structure of a connection identifier) and thus radio resources (e.g., bandwidth) to be provided to the mobile station are reduced.
    Type: Grant
    Filed: February 4, 2009
    Date of Patent: May 1, 2012
    Assignee: Samsung Electronics co., Ltd.
    Inventor: Byung-Jun Park
  • Semiconductor Devices Having Backside Illuminated Image Sensors
    Publication number: 20120091515
    Abstract: A semiconductor substrate includes a photodiode on a support substrate. An insulating layer is provided between the support substrate and the semiconductor substrate. A first conductive pattern is provided in the insulating layer. A first through electrode penetrates the support substrate to be in contact with the first conductive pattern.
    Type: Application
    Filed: July 12, 2011
    Publication date: April 19, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Gil-Sang Yoo, Chang-Rok Moon, Byung-Jun Park, Sang-Hoon Kim, Seung-Hun Shin
  • CMOS image sensors and related devices and fabrication methods
    Patent number: 8154062
    Abstract: An image sensor device includes a substrate including a light sensing, region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed.
    Type: Grant
    Filed: October 16, 2009
    Date of Patent: April 10, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Byung-Jun Park
  • Large capacity hollow-type flywheel energy storage device
    Patent number: 8134264
    Abstract: Disclosed is a large capacity hollow-type flywheel energy storage device. The energy storage device includes a hollow shaft, a vacuum chamber receiving the hollow shaft, a flywheel having a predetermined weight and disposed at an inner edge of the vacuum chamber, and a hub connecting the flywheel to the hollow shaft and disposed in the vacuum chamber to be rotatable together with the flywheel. A superconductive bearing and an electromagnet bearing are disposed inside and outside the hollow shaft, respectively, such that magnetic forces thereof can be shielded from each other. Thus, magnetic interference between the superconductive bearing and the electromagnet bearing is shielded by the magnet shield interposed therebetween, thereby preventing rotation loss by stabilizing a structural mechanism during rotation while improving design adaptability.
    Type: Grant
    Filed: September 15, 2009
    Date of Patent: March 13, 2012
    Assignee: Korea Electric Power Corporation
    Inventors: Young Hee Han, Se Yong Jung, Jeong Phil Lee, Byung Jun Park, Byeong Cheol Park, Nyeon Ho Jeong, Tae Hyun Sung
  • Methods of manufacturing an image sensor having an air gap
    Patent number: 8119439
    Abstract: In an example embodiment, the method of manufacturing an image sensor includes forming an interlayer dielectric (ILD) on a substrate. The substrate may have a plurality of pixels arranged thereon and each of the pixels includes a photoelectric conversion device configured to sense external light and generate photo charges. Furthermore, the method may include forming a metal on the ILD and removing portions of the metal to form a reflection pattern. Additionally, the method may include removing the ILD to a depth to form a trench adjacent to the reflection pattern and forming an air gap in the trench by forming oxide over the substrate such that the reflection pattern and the upper portion of the trench are covered.
    Type: Grant
    Filed: February 4, 2010
    Date of Patent: February 21, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Byung-Jun Park
  • SHADOW FRAME AND MANUFACTURING METHOD THEREOF
    Publication number: 20110304086
    Abstract: A shadow frame and a method of manufacturing the shadow frame are disclosed. The shadow frame is utilized in photoelectrical semiconductor manufacturing processes and is utilized for fixing a glass substrate by combing with a support base used to carry the glass substrate. The shadow frame has a plurality of frame components and welding parts, and the frame components are adjoined at the welding parts to form the shadow frame. The provided shadow frame and its manufacturing method are capable of improving the utility rate of the substrate used to manufacture the shadow frame, avoiding a waste of the substrate, and thereby capable of reducing the manufacturing cost.
    Type: Application
    Filed: March 29, 2011
    Publication date: December 15, 2011
    Applicant: Global Material Science Co., Ltd.
    Inventors: FANG-YU LIU, Byung-jun Park, Jin-jong Su
  • Method of manufacturing a CMOS image sensor
    Patent number: 8043927
    Abstract: In a method of manufacturing a complementary metal-oxide semiconductor (CMOS) image sensor (CIS), an epitaxial layer may be formed on a first substrate including a chip area and a scribe lane area. A first impurity layer may be formed adjacent to the first substrate by implanting first impurities into the epitaxial layer. A photodiode may be formed in the epitaxial layer on the chip area. A circuit element electrically connected to the photodiode may be formed on the epitaxial layer. A protective layer protecting the circuit element may be formed on the epitaxial layer. A second substrate may be attached onto the protective layer. The first substrate may be removed to expose the epitaxial layer. A color filter layer may be formed on the exposed epitaxial layer using the first impurity layer as an alignment key. A microlens may be formed over the color filter layer.
    Type: Grant
    Filed: June 22, 2009
    Date of Patent: October 25, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-Jun Park, Tae-Hun Lee, Seung-Hun Shin
  • CMOS image sensor and manufacturing method thereof
    Patent number: 7943976
    Abstract: A CMOS image sensor includes isolation regions and a photo diode region formed in a substrate, gate electrodes formed on the substrate, impurity injection regions formed in the substrate respectively positioned between the gate electrodes and the isolation regions, silicide regions formed on upper surfaces of the gate electrodes and the impurity injection regions, a first insulating layer formed on a surface of the photodiode region and sides of the gate electrodes, a second insulating layer formed on the first insulating layer, a third insulating layer formed on the second insulating layer, an interlayer insulating layer formed to cover the third insulating layer, and via plugs vertically passing through the interlayer insulating layer and connected to the silicide regions.
    Type: Grant
    Filed: October 15, 2009
    Date of Patent: May 17, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Byung-jun Park
  • DIFFUSER STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20110111128
    Abstract: A diffuser structure and a manufacturing method thereof are disclosed. The diffuser structure includes a substrate, a plurality of throughholes, and a glue layer. The throughholes are perpendicularly formed in the substrate. Each throughhole includes a gas-in part, a gas-out part, and a connecting part for connecting the gas-in part to the gas-out part. The glue layer is formed on a side wall of each gas-out part, and a thickness of the glue layer is between 1 ?m and 11 ?m. The present invention can solve a problem that particles are periodically generated after a periodic self-cleaning function is implemented in a plasma-enhanced chemical vapor deposition system.
    Type: Application
    Filed: April 18, 2010
    Publication date: May 12, 2011
    Applicant: Global Material Science CO., LTD.
    Inventors: BYUNG-JUN PARK, Jin-jong Su, Fang-yu Liu
  • STRESS-REDUCING TYPE ROTOR
    Publication number: 20110100156
    Abstract: A rotor reducing stress concentration generated by centrifugal force, the rotor having interference fit between a reinforcing ring and the external circumference of a rotor cylinder or rotor cylinder having a hole, wherein the rotor preliminarily rotates at high speed so that the rotor is plastic-deformed in advance, so that less plastic-deformation occurs even when the rotor rotates at high speed compared to the case where plastic deformation is not performed in advance.
    Type: Application
    Filed: March 16, 2010
    Publication date: May 5, 2011
    Applicant: Korea Electric Power Corporation
    Inventors: Se Yong Jung, Young Hee Han, Byung Jun Park, Sang Chul Han, Byeong Cheol Park, Jeong Phil Lee
  • Unit pixels, image sensor containing unit pixels, and method of fabricating unit pixels
    Patent number: 7928488
    Abstract: Example embodiments provide a unit pixel, an image sensor containing unit pixels, and a method of fabricating unit pixels. The unit pixel may include a semiconductor substrate, photoelectric transducers formed within the semiconductor substrate, multi-layered wiring layers formed on a frontside of the semiconductor substrate, inner lenses formed on a backside of the semiconductor substrate corresponding to the photoelectric transducers, and microlenses formed above the inner lenses.
    Type: Grant
    Filed: October 6, 2008
    Date of Patent: April 19, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Byung-Jun Park
  • Image sensor and method of fabricating the same
    Publication number: 20100244175
    Abstract: The image sensor includes a substrate; a wiring structure formed on a front side of the substrate and including a plurality of wiring layers and a plurality of insulating films; a first well formed within the substrate and having a first conductivity type; and a first metal wiring layer directly contacting a backside of the substrate and configured to apply a first well bias to the first well.
    Type: Application
    Filed: March 26, 2010
    Publication date: September 30, 2010
    Inventor: Byung Jun Park
  • Method of manufacturing image sensor
    Patent number: 7803653
    Abstract: A method of manufacturing an image sensor includes forming a device isolation region in an active pixel sensor area of a semiconductor substrate and alignment keys in a scribe lane area of the semiconductor substrate, such that the depth of the alignment keys is equal to or shallower than the depth of the device isolation region. The method further includes forming a photoelectric converter in the active pixel sensor area, polishing a rear surface of the semiconductor substrate and using the alignment keys to form a microlens at a position corresponding to the photoelectric converter on the polished rear surface of the semiconductor substrate.
    Type: Grant
    Filed: August 7, 2007
    Date of Patent: September 28, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Gil-sang Yoo, Byung-jun Park, Yun-ki Lee