Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a package paddle having an upper hole below a paddle top side, the upper hole bounded by an upper non-horizontal side with a curve surface; forming a terminal adjacent the package paddle; mounting an integrated circuit on the paddle top side; and forming an encapsulation within the upper hole.

Abstract: A semiconductor wafer has a plurality of semiconductor die separated by a peripheral region. A trench is formed in the peripheral region of the wafer. A via is formed on the die. The trench extends to and is continuous with the via. A first conductive layer is deposited in the trench and via to form conductive TSV. The first conductive layer is conformally applied or completely fills the trench and via. The trench has a larger area than the vias which accelerates formation of the first conductive layer. A second conductive layer is deposited over a front surface of the die. The second conductive layer is electrically connected to the first conductive layer. The first and second conductive layers can be formed simultaneously. A portion of a back surface of the wafer is removed to expose the first conductive layer. The die can be electrically interconnected through the TSVs.

Abstract: An integrated circuit packaging system, and a method of manufacture therefor, including: electrical terminals; circuitry protective material around the electrical terminals and formed to have recessed pad volumes; routable circuitry on the top surface of the circuitry protective material; and an integrated circuit die electrically connected to the electrical terminals.

Abstract: A semiconductor device is made by providing a sacrificial substrate and depositing an adhesive layer over the sacrificial substrate. A first conductive layer is formed over the adhesive layer. A polymer pillar is formed over the first conductive layer. A second conductive layer is formed over the polymer pillar to create a conductive pillar with inner polymer core. A semiconductor die or component is mounted over the substrate. An encapsulant is deposited over the semiconductor die or component and around the conductive pillar. A first interconnect structure is formed over a first side of the encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The sacrificial substrate and adhesive layers are removed. A second interconnect structure is formed over a second side of the encapsulant opposite the first interconnect structure. The second interconnect structure is electrically connected to the conductive pillar.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a lead-frame having a metal connector mounted thereon and having a peripheral mounting region; forming an insulation cover on the lead-frame and on the metal connector; connecting an integrated circuit die over the insulation cover; forming a top encapsulation on the integrated circuit die with the peripheral mounting region exposed from the top encapsulation; forming a routing layer, having a conductive land, from the lead-frame; and forming a bottom encapsulation partially encapsulating the routing layer and the insulation cover.

Abstract: A semiconductor device is manufactured by, first, providing a wafer, designated with a saw street guide, and having a bond pad formed on an active surface of the wafer. The wafer is taped with a dicing tape. The wafer is singulated along the saw street guide into a plurality of dies having a plurality of gaps between each of the plurality of dies. The dicing tape is stretched to expand the plurality of gaps to a predetermined distance. An organic material is deposited into each of the plurality of gaps. A top surface of the organic material is substantially coplanar with a top surface of a first die of the plurality of dies. A redistribution layer is patterned over a portion of the organic material. An under bump metallization (UBM) is deposited over the organic material in electrical communication, through the redistribution layer, with the bond pad.

Abstract: A method of manufacture of an integrated circuit mounting system includes: providing a die paddle with a component side having a die mount area and a recess with more than one geometric shape; applying an adhesive on the die mount area and in a portion of the recess; and mounting an integrated circuit device with an inactive side directly on the adhesive.

Abstract: An integrated circuit package system includes an external interconnect having a lead tip and a lead body, including a recess in the lead body including a first recess segment, having an orientation substantially parallel to the lengthwise dimension of the lead body, and a second recess segment intersecting and perpendicular to the first recess segment along a lead body top surface of the lead body, the first recess segment at a bottom portion of the second recess segment; an internal interconnect between an integrated circuit die and the external interconnect; and an encapsulation to cover the external interconnect with the recess filled.

Abstract: An integrated circuit package system provides a leadframe having a short lead finger and a long lead finger, and the long lead finger and the short lead finger reside substantially within the same horizontal plane. A first die is placed in the leadframe. A second die is offset from the first die. The offset second die is attached over the first die and the long lead finger with an adhesive. The first die is electrically connected to the short lead finger. The second die is electrically connected to at least the long lead finger or the short lead finger. At least portions of the leadframe, the first die, and the second die are encapsulated in an encapsulant.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming an isolated contact having a contact protrusion, the contact protrusion having a lower protrusion surface, an upper protrusion surface, and a protrusion sidewall; forming a die paddle, adjacent to the isolated contact, having a die paddle protrusion, the die paddle protrusion having a lower die protrusion surface, an upper die protrusion surface, and a die protrusion sidewall; depositing a contact pad on the contact protrusion; depositing a die paddle pad on the die paddle protrusion; coupling an integrated circuit die to the contact protrusion; and molding an encapsulation on the integrated circuit die.

Abstract: System and method of manufacturing an integrated circuit packaging system using routable grid array lead frame. Method includes providing a lead frame having top metal connector and bottom contact, and treating the top metal connector with an additive, or the bottom contact with an additive, or both. Concomitant to the treatment process, insulation cover or bottom encapsulation can be formed about the top metal connector or the bottom contact with respective openings. Upon coupling the interconnects to the lead frame the interconnects do not exceed the metal contacts by more than about 60% due to the treatment process.

Abstract: System and method of manufacturing an integrated circuit packaging system using transferable trace lead frame. A lead frame is provided having lower metal contacts. A masking layer can be formed on an upper surface of the lead frame for protection and shielding purposes. Routing layer and conductive lands may subsequently be formed by shaping the lead frame, along with bottom encapsulation. The masking layer may subsequently be removed for additional processing steps including connecting an integrated circuit die to the upper surface of the lead frame.

Abstract: A semiconductor device is made by providing a sacrificial substrate and depositing an adhesive layer over the sacrificial substrate. A first conductive layer is formed over the adhesive layer. A polymer pillar is formed over the first conductive layer. A second conductive layer is formed over the polymer pillar to create a conductive pillar with inner polymer core. A semiconductor die or component is mounted over the substrate. An encapsulant is deposited over the semiconductor die or component and around the conductive pillar. A first interconnect structure is formed over a first side of the encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The sacrificial substrate and adhesive layers are removed. A second interconnect structure is formed over a second side of the encapsulant opposite the first interconnect structure. The second interconnect structure is electrically connected to the conductive pillar.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a terminal having a top with a depression; applying a dielectric material in the depression, the dielectric material having a gap formed therein and exposing a portion of the top therefrom; forming a trace within the gap and in direct contact with the top, the trace extending laterally over an upper surface of the dielectric material; and connecting an integrated circuit to the terminal through the trace.

Abstract: A semiconductor wafer has a plurality of semiconductor die separated by a peripheral region. A trench is formed in the peripheral region of the wafer. A via is formed on the die. The trench extends to and is continuous with the via. A first conductive layer is deposited in the trench and via to form conductive TSV. The first conductive layer is conformally applied or completely fills the trench and via. The trench has a larger area than the vias which accelerates formation of the first conductive layer. A second conductive layer is deposited over a front surface of the die. The second conductive layer is electrically connected to the first conductive layer. The first and second conductive layers can be formed simultaneously. A portion of a back surface of the wafer is removed to expose the first conductive layer. The die can be stacked and electrically interconnected through the TSVs.

Abstract: A semiconductor wafer is made by forming a first conductive layer over a sacrificial substrate, mounting a semiconductor die to the sacrificial substrate, depositing an insulating layer over the semiconductor die and first conductive layer, exposing the first conductive layer and contact pad on the semiconductor die, forming a second conductive layer over the insulating layer between the first conductive layer and contact pad, forming solder bumps on the second conductive layer, depositing an encapsulant over the semiconductor die, first conductive layer, and interconnect structure, and removing the sacrificial substrate after forming the encapsulant to expose the conductive layer and semiconductor die. A portion of the encapsulant is removed to expose a portion of the solder bumps. The solder bumps are sized so that each extends the same outside the encapsulant. The semiconductor die are stacked by electrically connecting the solder bumps.

Abstract: A semiconductor device is manufactured by, first, providing a wafer, designated with a saw street guide, and having a bond pad formed on an active surface of the wafer. The wafer is taped with a dicing tape. The wafer is singulated along the saw street guide into a plurality of dies having a plurality of gaps between each of the plurality of dies. The dicing tape is stretched to expand the plurality of gaps to a predetermined distance. An organic material is deposited into each of the plurality of gaps. A top surface of the organic material is substantially coplanar with a top surface of a first die of the plurality of dies. A redistribution layer is patterned over a portion of the organic material. An under bump metallization (UBM) is deposited over the organic material in electrical communication, through the redistribution layer, with the bond pad.

Abstract: A semiconductor wafer has an insulating layer formed over an active surface of the wafer. A conductive layer is formed over the insulating layer. A first via is formed from a back surface of the semiconductor wafer through the semiconductor wafer and insulating layer to the conductive layer. A conductive material is deposited in the first via to form a conductive TSV. An insulating material can be deposited in the first via to form an insulating core within the conductive via. After forming the conductive TSV, a second via is formed around the conductive TSV from the back surface of the semiconductor wafer through the semiconductor wafer and insulating layer to the conductive layer. An insulating material is deposited in the second via to form an insulating annular ring. The conductive via can be recessed within or extend above a surface of the semiconductor die.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a package paddle having a single integral structure with a paddle central portion surrounded by a paddle peripheral portion; forming a terminal adjacent the package paddle; mounting an integrated circuit over the paddle central portion; and forming an encapsulation over the integrated circuit and the terminal, the encapsulation free of delamination with the encapsulation directly on the paddle peripheral portion.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a die paddle having an internal portion with a trench along a perimeter of the die paddle; forming an interconnect having a concave indentation and an upper portion, the upper portion, opposite the concave indentation, aligned horizontally to the internal portion; attaching an integrated circuit device on the die paddle, the trench between the integrated circuit device and the perimeter; attaching an electrical connector to the integrated circuit device and to the upper portion; and applying an encapsulation over the integrated circuit device, the electrical connector, the die paddle, and the interconnect, the concave indentation exposed below the encapsulation.