Abstract: Methods of manufacturing a semiconductor chip are provided. The methods may include providing a semiconductor substrate including integrated circuit regions and a cut region. The cut region may be between the integrated circuit regions. The methods may also include forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region, polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer, and separating the integrated circuit regions along the crack. The cut region may include a plurality of multilayer metal patterns on an active surface of the semiconductor substrate, which is opposite to the inactive surface of the semiconductor substrate. The plurality of multilayer metal patterns may form a pyramid structure when viewed in cross section.

Abstract: A display device includes a substrate and a plurality of unit pixels disposed on the substrate. Each unit pixel includes a plurality of sub-pixels, a plurality of light sensing pixels, and a plurality of partition wall members. Each of the sub-pixels includes a light emitting element that emits light and a light emitting area from which the light is emitted. Each of the light sensing pixels includes a light receiving element that outputs a sensing signal corresponding to the light and a light receiving area that receives the light. In a plan view, each of the partition wall members surrounds the corresponding light receiving area and overlaps at least some of the sub-pixels.

Abstract: Disclosed herein is an apparatus and method for detecting an emotional change through facial expression analysis. The apparatus for detecting an emotional change through facial expression analysis includes a memory having at least one program recorded thereon, and a processor configured to execute the program, wherein the program includes a camera image acquisition unit configured to acquire a moving image including at least one person, a preprocessing unit configured to extract a face image of a user from the moving image and preprocess the extracted face image, a facial expression analysis unit configured to extract a facial expression vector from the face image of the user and cumulatively store the facial expression vector, and an emotional change analysis unit configured to detect a temporal location of a sudden emotional change by analyzing an emotion signal extracted based on cumulatively stored facial expression vector values.

Abstract: A three-dimensional semiconductor integrated circuit device including an inter-die interface is provided. The device includes a top die including a plurality of micro cells provided on a top surface of the top die, a plurality of micro bumps provided on a bottom surface of the top die, and wiring patterns connecting the plurality of micro cells to the plurality of micro bumps; and a bottom die including a plurality of macro cells provided on a top surface thereof, wherein the plurality of macro cells are electrically connected to the plurality of micro bumps, respectively, wherein a size of a region in which the plurality of micro cells are provided is smaller than a size of a region in which the plurality of micro bumps are provided.

Abstract: The present disclosure relates to a novel cell-penetrating multifunctional peptide, a composition including the same.

Abstract: A vacuum blender having a foreign body catching member mounted thereon, the foreign body catching member disposed outside a container cover such that one end is communicatably coupled to a discharge hole formed in the container cover, and the other end is communicatably coupled to a communication path enabling a vacuum pump to communicate with the container cover. When the vacuum pump is operated in a state where the two ends of the foreign body catching member are communicating with the discharge hole and the communication path, respectively, air inside a crushing container is discharged to the outside by passing through the vacuum pump via the discharge hole, the foreign body catching member, and the communication path, and, by means of moving relative to the container cover, the foreign body catching member disposed outside the container cover has the one end communicate with or be blocked from the discharge hole.

Abstract: An air conditioning device for a vehicle includes: a housing having an inside divided into an inflow space, a heat exchange space, and an outflow space, which are straightly arranged, and having a plurality of discharge ports, which communicates with an interior, at the inflow space; a blowing unit disposed at the inflow space of the housing and configured to blow air; a heat exchange unit disposed at the heat exchange space of the housing and configured to adjust a temperature of conditioned air by exchanging heat with air; and an opening-closing door disposed at the outflow space of the housing and configured to open and close the plurality of discharge ports such that conditioned air at an adjusted temperature selectively flows to the plurality of discharge ports. The air conditioning device adjusts the temperature of conditioned air for respective modes and reduces a flow resistance of air.

Abstract: A method of evaluating quality of graphene using a confocal laser scanning microscope, the method comprising steps of: irradiating with laser light a graphene layer formed on a catalyst layer; detecting a signal of light reflected from the graphene layer; forming a planar image of the graphene layer using the detected optical signal; and analyzing a contrast between graphene and the catalyst layer in the planar image, wherein the graphene layer is continuously formed on the catalyst layer by a roll-to-roll process.

Abstract: The present disclosure relates to an ultraviolet light-blocking composition containing a centipede grass extract and a cosmetic composition and, more specifically, to an ultraviolet light-blocking composition comprising a centipede grass (Eremochloa ophiuroides) leaf extract as an active ingredient; and a cosmetic composition containing the ultraviolet light-blocking composition.

Abstract: Provided is a dispatching method in a factory based on reinforcement learning. The dispatching method in a factory based on reinforcement learning may comprise: constructing a Markov decision process (MDP) for dispatching actions of a dispatcher in the factory and resulting rewards and states of the factory; performing learning by applying reinforcement learning (RL) to the constructed MDP; and as a result of said RL, selecting a job that maximizes a weighted sum of a plurality of scored dispatching rules.

Abstract: Provided is a method for resource planning in a factory based on simulations. The method for resource planning may comprise: modeling factory resources as capacity buckets; allocating a plurality of demands to the modeled capacity buckets; and, constructing factory resource planning by performing capacity bucket simulations (CBSs) based on the factory resources to which the plurality of demands are allocated.

Abstract: Provided is a dispatching method in a factory based on reinforcement learning. The dispatching method in a factory based on reinforcement learning may comprise: constructing a Markov decision process (MDP) for dispatching actions of a dispatcher in the factory and resulting rewards and states of the factory; performing learning by applying reinforcement learning (RL) to the constructed MDP; and as a result of said RL, selecting a job that maximizes a weighted sum of a plurality of scored dispatching rules.

Abstract: A semiconductor device includes an element layer, a plurality of first interconnect lines on the element layer, a first insulation layer including carbon having a uniform concentration distribution between the first interconnect lines, a plurality of second interconnect lines spaced from the first interconnect lines, and a second insulation layer between the second interconnect lines. An air spacing is included between the second interconnect lines.

Abstract: A semiconductor device includes a first interlayer dielectric film on a substrate, first and second wires respectively extending in a first direction within the first interlayer dielectric film, the first and second wires being adjacent to each other in a second direction different from the first direction, a hard mask pattern on the first interlayer dielectric film, the hard mask pattern including an opening, and an air gap within the first interlayer dielectric film, the air gap including a first portion overlapping vertically with the opening and a second portion not overlapping with the opening in the first direction.

Abstract: A semiconductor device includes a first insulating interlayer on a first region of a substrate and a second insulating interlayer on a second region of the substrate, a plurality of first wiring structures on the first insulating interlayer, the first wiring structures being spaced apart from each other, a plurality of second wiring structures filling a plurality of trenches on the second insulating interlayer, respectively, an insulation capping structure selectively on a surface of the first insulating interlayer between the first wiring structures and on a sidewall and an upper surface of each of the first wiring structures, the insulation capping structure including an insulating material, a third insulating interlayer on the first and second wiring structures, and an air gap among the first wiring structures under the third insulating interlayer.

Abstract: A semiconductor device includes a first interlayer dielectric film on a substrate, first and second wires respectively extending in a first direction within the first interlayer dielectric film, the first and second wires being adjacent to each other in a second direction different from the first direction, a hard mask pattern on the first interlayer dielectric film, the hard mask pattern including an opening, and an air gap within the first interlayer dielectric film, the air gap including a first portion overlapping vertically with the opening and a second portion not overlapping with the opening in the first direction.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a first interlayer insulating layer including a first trench, on a substrate a first liner layer formed along a side wall and a bottom surface of the first trench and including noble metal, the noble metal belonging to one of a fifth period and a sixth period of a periodic chart that follows numbering of International Union of Pure and Applied Chemistry (IUPAC) and belonging to one of eighth to tenth groups of the periodic chart, and a first metal wire filling the first trench on the first liner layer, a top surface of the first metal wire having a convex shape toward a bottom surface of the first trench.

Abstract: Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.

Abstract: A semiconductor device includes a first interlayer dielectric film on a substrate, first and second wires respectively extending in a first direction within the first interlayer dielectric film, the first and second wires being adjacent to each other in a second direction different from the first direction, a hard mask pattern on the first interlayer dielectric film, the hard mask pattern including an opening, and an air gap within the first interlayer dielectric film, the air gap including a first portion overlapping vertically with the opening and a second portion not overlapping with the opening in the first direction.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including an opening, a barrier conductive film extending along a sidewall of the opening and a bottom surface exposed by the opening, a first film disposed on the barrier conductive film and in the opening, and the first film including cobalt, and a conductive liner on the barrier conductive film, the conductive liner extending along a portion of a side all of the opening and including a metal other than cobalt.