Abstract: A thermal sensor device (100) comprises an integrated circuit die (104) having a first mating side (126) and an external side (128) opposite the mating side (126). A sensor-containing die (102) is disposed in spaced relation with the integrated circuit die (104) so that the first mating side (126) faces a second mating side (114), a portion (144) of the sensor-containing die (102) overhanging the integrated circuit die (104). An electrically conductive circuit path (132, 146, 120, 122) extends from a first opposing surface (134) of the first mating side (126) to a second opposing surface of the second mating side (114) and extends further to the overhanging portion (144) so that a portion of the electrically conductive circuit path (132, 146, 120, 122) also overhangs the integrated circuit die (104).

Abstract: A method of manufacturing a thermal sensor (106) comprises providing a first part (102) of a body of the sensor (106), the first part (102) of the body being configured to define a first part (114) of a chamber (310). A second part (104) of the body of the sensor (106) is also provided, the second part (104) of the body being configured to define a second part (118) of the chamber (310). A getter material (112) is disposed in the first part (114) of the body of the sensor (106), and the first part (102) and the second part (104) of the body of the sensor (106) are brought together so that the first and second parts (102, 104) of the chamber (310) define the chamber (310). The chamber (310) is backfilled with a gas to a pressure greater than 10 mbar, and the first part (102) of the body is bonded to the second part (104) of the body so as to seal hermetically the chamber (310).

Abstract: A sealed sensor device (104) comprising: an internal atmosphere comprising a gas pressurised to a predetermined pressure, the predetermined pressure being below atmospheric pressure when the internal atmosphere is hermetically sealed from ambient. A sensor cavity (214) is also provided having a periphery and is in fluid communication with the internal atmosphere, thereby comprising the gas and the gas having a mean free path at the predetermined pressure associated therewith. A thermopile (256) is disposed in the sensor cavity (214) for detecting a change in pressure of the internal atmosphere and detecting failure of the hermetic seal. A membrane structure (234) disposed within the cavity comprises the thermopile (256). The membrane structure (234) also comprises a heating element, and a shortest distance from substantially any point on the membrane structure (234) to the periphery of the sensor cavity (214) is less than the mean free path of the gas at the predetermined pressure.

Abstract: A method and a circuit for measuring an absolute voltage signal, such that the circuit comprises: an A/D convertor, and a controller adapted for: a) obtaining a first digital reference value for a first reference signal having a positive temperature coefficient; b) obtaining a second digital reference value for a second reference signal having a negative temperature coefficient; c) obtaining a raw digital signal value for the signal to be measured, while applying a same reference voltage for step a) to c); and d) calculating the absolute voltage value in the digital domain using a mathematical function of the first and second digital reference value, and the raw digital signal value.

Abstract: A method and a circuit for measuring an absolute voltage signal, such that the circuit comprises: an A/D convertor, and a controller adapted for: a) obtaining a first digital reference value for a first reference signal having a positive temperature coefficient; b) obtaining a second digital reference value for a second reference signal having a negative temperature coefficient; c) obtaining a raw digital signal value for the signal to be measured, while applying a same reference voltage for step a) to c); and d) calculating the absolute voltage value in the digital domain using a mathematical function of the first and second digital reference value, and the raw digital signal value.

Abstract: An infrared sensor assembly for sensing infrared radiation comprises infrared sensing elements and the infrared sensing compensation elements that are different so that, for a same flux on the infrared sensing elements and the infrared sensing compensation elements, the radiation responsive element of the infrared sensing elements absorbs more radiation than the radiation responsive element of the infrared sensing compensation elements, as to receive substantially more radiation than the radiation responsive element of the infrared sensing compensation elements. An output of the sensor array is a subtractive function of a sum of the signals of the plurality of infrared sensing elements and a sum of the signals of the plurality of the infrared sensing compensation elements such that at least linear and/or non-linear parasitic thermal fluxes are at least partly compensated for.

Abstract: A semiconductor device for measuring IR radiation comprising: at least one sensor pixel; at least one reference pixel shielded from said IR radiation comprising a heater; a controller adapted for: measuring a responsivity by applying power to the heater, while not heating the sensor pixel; measuring a first output signal of an unheated pixel and a first reference output signal of the heated pixel, obtaining the responsivity as a function of a measure of the applied power to the heater and of the difference between the first output signal and the first reference output signal; applying a period of cooling down until the temperature of the reference pixel and the sensor pixel are substantially the same; generating the output signal indicative of the IR radiation, based on the difference between the sensor and the reference output signal, by converting this difference using the responsivity.

Abstract: A semiconductor device for measuring IR radiation comprising: at least one sensor pixel; at least one reference pixel shielded from said IR radiation comprising a heater; a controller adapted for: measuring a responsivity by applying power to the heater, while not heating the sensor pixel; measuring a first output signal of an unheated pixel and a first reference output signal of the heated pixel, obtaining the responsivity as a function of a measure of the applied power to the heater and of the difference between the first output signal and the first reference output signal; applying a period of cooling down until the temperature of the reference pixel and the sensor pixel are substantially the same; generating the output signal indicative of the IR radiation, based on the difference between the sensor and the reference output signal, by converting this difference using the responsivity.

Abstract: A packaged semiconductor device comprising a stack including a die comprising a functional circuit, and a cap which is wafer bonded to the die for protecting the functional circuit as well as a mold component for packaging the stack. At least the cap and/or the die comprises at least one groove at least partially in contact with the mold component, for increasing adhesion of the mold component to the stack. A corresponding method for manufacturing such a packaged device also is described.

Abstract: Method of encapsulating a semiconductor structure comprising providing a semiconductor structure comprising an opto-electric element located in a cavity formed between a substrate and a cap layer, the cap layer being made of a material transparent to light, and having a flat upper surface; forming at least one protrusion on the cap layer; bringing the at least one protrusion of the cap layer in contact with a tool having a flat surface region, and applying a opaque material to the semiconductor structure where it is not in contact with the tool; and removing the tool thereby providing an encapsulated optical semiconductor device having a transparent window integrally formed with the cap layer.

Abstract: A chip for radiation measurements, the chip comprising a first substrate comprising a first sensor and a second sensor. The chip moreover comprises a second substrate comprising a first cavity and a second cavity both with oblique walls. An internal layer is present on the inside of the second cavity. The second substrate is sealed to the first substrate with the cavities on the inside such that the first cavity is above the first sensor and the second cavity is above the second sensor.

Abstract: An infrared sensor assembly for sensing infrared radiation comprises infrared sensing elements and the infrared sensing compensation elements that are different so that, for a same flux on the infrared sensing elements and the infrared sensing compensation elements, the radiation responsive element of the infrared sensing elements absorbs more radiation than the radiation responsive element of the infrared sensing compensation elements, as to receive substantially more radiation than the radiation responsive element of the infrared sensing compensation elements. An output of the sensor array is a subtractive function of a sum of the signals of the plurality of infrared sensing elements and a sum of the signals of the plurality of the infrared sensing compensation elements such that at least linear and/or non-linear parasitic thermal fluxes are at least partly compensated for.

Abstract: An infrared sensor assembly for sensing infrared radiation from an object is disclosed. The infrared sensor assembly comprises a sensor array comprising a plurality of sensing elements, provided on or embedded in a substrate extending in a substrate plane. The sensor array comprises at least two infrared sensing elements, each infrared sensing element having a radiation responsive element providing a proportionate electrical signal in response to infrared radiation incident thereto and at least two blind sensing elements, at least one blind sensing element being interspersed among the at least two sensing elements, each blind sensing element being shielded from incident infrared radiation from the object and providing a proportionate electrical signal in response to parasitic thermal fluxes. The output of the sensor array is a function of the infrared sensing elements and of the blind sensing elements such that parasitic thermal fluxes are at least partly compensated for.

Abstract: An infrared thermal sensor for sensing infrared radiation is disclosed. The infrared thermal sensor comprises a substrate and a cap structure together forming a sealed cavity, a membrane arranged in said cavity for receiving infrared radiation (IR) through a window or aperture and a plurality of beams for suspending the membrane. At least one beam has a thermocouple arranged therein or thereon for measuring a temperature difference (?T) between the membrane and the substrate, the plurality of beams. Furthermore at least one beam is mechanically supporting the membrane without a thermocouple being present therein or thereon.

Abstract: An infrared thermal sensor for detecting infrared radiation, comprising a substrate and a cap structure together forming a sealed cavity, the cavity comprising a gas at a predefined pressure; a membrane arranged in said cavity for receiving infrared radiation; a plurality of beams for suspending the membrane; a plurality of thermocouples for measuring a temperature difference between the membrane and the substrate; wherein the ratio of the thermal resistance between the membrane and the substrate through the thermocouples, and the thermal resistance between the membrane and the substrate through the beams and through the gas is a value in the range of 0.8 to 1.2. A method of designing such a sensor, and a method of producing such a sensor is also disclosed.

Abstract: An infrared thermal sensor for detecting infrared radiation is described. It comprises a substrate and a cap structure together forming a sealed cavity. A membrane is suspended therein by a plurality of beams, each beam comprising at least one thermocouple arranged therein or thereon for measuring a temperature difference between the membrane and the substrate. At least two beams have a different length and each of the thermocouples have a substantially same constant width to length ratio such that the thermal resistance measured between the membrane and the substrate is substantially constant for each beam, and such that the electrical resistance measured between the membrane and the substrate is substantially constant for each beam. The beams may be linear, and be oriented in a non-radial direction.

Abstract: Method of encapsulating a semiconductor structure comprising providing a semiconductor structure comprising an opto-electric element located in a cavity formed between a substrate and a cap layer, the cap layer being made of a material transparent to light, and having a flat upper surface; forming at least one protrusion on the cap layer; bringing the at least one protrusion of the cap layer in contact with a tool having a flat surface region, and applying a opaque material to the semiconductor structure where it is not in contact with the tool; and removing the tool thereby providing an encapsulated optical semiconductor device having a transparent window integrally formed with the cap layer.

Abstract: Method of encapsulating a semiconductor structure comprising providing a semiconductor structure comprising an opto-electric element located in a cavity formed between a substrate and a cap layer, the cap layer being made of a material transparent to light, and having a flat upper surface; forming at least one protrusion on the cap layer; bringing the at least one protrusion of the cap layer in contact with a tool having a flat surface region, and applying a opaque material to the semiconductor structure where it is not in contact with the tool; and removing the tool thereby providing an encapsulated optical semiconductor device having a transparent window integrally formed with the cap layer.

Abstract: An infrared sensor assembly for sensing infrared radiation from an object is disclosed. The infrared sensor assembly comprises a sensor array comprising a plurality of sensing elements, provided on or embedded in a substrate extending in a substrate plane. The sensor array comprises at least two infrared sensing elements, each infrared sensing element having a radiation responsive element providing a proportionate electrical signal in response to infrared radiation incident thereto and at least two blind sensing elements, at least one blind sensing element being interspersed among the at least two sensing elements, each blind sensing element being shielded from incident infrared radiation from the object and providing a proportionate electrical signal in response to parasitic thermal fluxes. The output of the sensor array is a function of the infrared sensing elements and of the blind sensing elements such that parasitic thermal fluxes are at least partly compensated for.

Abstract: An infrared thermal sensor for sensing infrared radiation is disclosed. The infrared thermal sensor comprises a substrate and a cap structure together forming a sealed cavity, a membrane arranged in said cavity for receiving infrared radiation (IR) through a window or aperture and a plurality of beams for suspending the membrane. At least one beam has a thermocouple arranged therein or thereon for measuring a temperature difference (?T) between the membrane and the substrate, the plurality of beams. Furthermore at least one beam is mechanically supporting the membrane without a thermocouple being present therein or thereon.