Patents by Inventor Carlos H. Diaz

Carlos H. Diaz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220149274
    Abstract: Provided are a memory cell and a method of forming the same. The memory cell includes a bottom electrode, an etching stop layer, a variable resistance layer, and a top electrode. The etching stop layer is disposed on the bottom electrode. The variable resistance layer is embedded in the etching stop layer and in contact with the bottom electrode. The top electrode is disposed on the variable resistance layer. A semiconductor device having the memory cell is also provided.
    Type: Application
    Filed: January 25, 2022
    Publication date: May 12, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Chao Lin, Carlos H. Diaz, Shao-Ming Yu, Tung-Ying Lee
  • Patent number: 11322577
    Abstract: A negative capacitance device includes a semiconductor layer. An interfacial layer is disposed over the semiconductor layer. An amorphous dielectric layer is disposed over the interfacial layer. A ferroelectric layer is disposed over the amorphous dielectric layer. A metal gate electrode is disposed over the ferroelectric layer. At least one of the following is true: the interfacial layer is doped; the amorphous dielectric layer has a nitridized outer surface; a diffusion-barrier layer is disposed between the amorphous dielectric layer and the ferroelectric layer; or a seed layer is disposed between the amorphous dielectric layer and the ferroelectric layer.
    Type: Grant
    Filed: August 3, 2020
    Date of Patent: May 3, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chieh Lu, Cheng-Yi Peng, Chien-Hsing Lee, Ling-Yen Yeh, Chih-Sheng Chang, Carlos H. Diaz
  • Publication number: 20220130435
    Abstract: Disclosed herein are related to a circuit and a method of reading or sensing multiple bits of data stored by a multi-level cell. In one aspect, a first reference circuit is selected from a first set of reference circuits, and a second reference circuit is selected from a second set of reference circuits. Based at least in part on the first reference circuit and the second reference circuit, one or more bits of multiple bits of data stored by a multi-level cell can be determined. According to the determined one or more bits, a third reference circuit from the first set of reference circuits and a fourth reference circuit from the second set of reference circuits can be selected. Based at least in part on the third reference circuit and the fourth reference circuit, additional one or more bits of the multiple bits of data stored by the multi-level cell can be determined.
    Type: Application
    Filed: January 7, 2022
    Publication date: April 28, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Qing Dong, Mahmut Sinangil, Yen-Ting Lin, Kerem Akarvardar, Carlos H. Diaz, Yih Wang
  • Patent number: 11302695
    Abstract: In a method for forming an integrated semiconductor device, a first transistor over is formed on a substrate; an inter-layer dielectric (ILD) layer is deposited over the first transistor; a gate conductive layer is deposited over the ILD layer; a gate dielectric layer is deposited over the gate conductive layer; the gate dielectric layer and the gate conductive layer are etched to form a gate stack; and a 2D material layer that has a first portion extending along a top surface and sidewalls of the gate stack and a second portion extending along a top surface of the ILD layer.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: April 12, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Yi Peng, Chun-Chieh Lu, Meng-Hsuan Hsiao, Ling-Yen Yeh, Carlos H. Diaz, Tung-Ying Lee
  • Patent number: 11302804
    Abstract: Devices, and methods of forming such devices, having a material that is semimetal when in bulk but is a semiconductor in the devices are described. An example structure includes a substrate, a first source/drain contact region, a channel structure, a gate dielectric, a gate electrode, and a second source/drain contact region. The substrate has an upper surface. The channel structure is connected to and over the first source/drain contact region, and the channel structure is over the upper surface of the substrate. The channel structure has a sidewall that extends above the first source/drain contact region. The channel structure comprises a bismuth-containing semiconductor material. The gate dielectric is along the sidewall of the channel structure. The gate electrode is along the gate dielectric. The second source/drain contact region is connected to and over the channel structure.
    Type: Grant
    Filed: October 26, 2020
    Date of Patent: April 12, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jean-Pierre Colinge, Carlos H Diaz, Yee-Chia Yeo
  • Patent number: 11276763
    Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: March 15, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Carlos H. Diaz, Chung-Cheng Wu, Chia-Hao Chang, Chih-Hao Wang, Jean-Pierre Colinge, Chun-Hsiung Lin, Wai-Yi Lien, Ying-Keung Leung
  • Patent number: 11245071
    Abstract: Provided are a memory cell and a method of forming the same. The memory cell includes a bottom electrode, an etching stop layer, a variable resistance layer, and a top electrode. The etching stop layer is disposed on the bottom electrode. The variable resistance layer is embedded in the etching stop layer and in contact with the bottom electrode. The top electrode is disposed on the variable resistance layer. A semiconductor device having the memory cell is also provided.
    Type: Grant
    Filed: January 8, 2020
    Date of Patent: February 8, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Chao Lin, Carlos H. Diaz, Shao-Ming Yu, Tung-Ying Lee
  • Patent number: 11245033
    Abstract: In a method of manufacturing a semiconductor device, a support layer is formed over a substrate. A patterned semiconductor layer made of a first semiconductor material is formed over the support layer. A part of the support layer under a part of the semiconductor layer is removed, thereby forming a semiconductor wire. A semiconductor shell layer made of a second semiconductor material different from the first semiconductor material is formed around the semiconductor wire.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: February 8, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Carlos H. Diaz, Chun-Hsiung Lin, Huicheng Chang, Syun-Ming Jang, Chien-Hsun Wang, Mao-Lin Huang
  • Patent number: 11239341
    Abstract: Various transistors, such as horizontal gate-all-around transistors, and methods of fabricating such are disclosed herein. An exemplary transistor includes a first nanowire and a second nanowire that include a first semiconductor material, a gate that wraps a channel region of the first nanowire and the second nanowire, and source/drain feature that wraps source/drain regions of the first nanowire and the second nanowire. The source/drain feature includes a second semiconductor material that is configured differently than the first semiconductor material. In some implementations, the transistor further includes a fin-like semiconductor layer disposed over a substrate. The first nanowire and the second nanowire are disposed over the fin-like semiconductor layer, such that the first nanowire, the second nanowire, and the fin-like semiconductor layer extend substantially parallel to one another along the same length-wise direction.
    Type: Grant
    Filed: August 3, 2020
    Date of Patent: February 1, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Hsiung Lin, Chung-Cheng Wu, Carlos H. Diaz, Chih-Hao Wang, Wen-Hsing Hsieh, Yi-Ming Sheu
  • Patent number: 11238906
    Abstract: Disclosed herein are related to a circuit and a method of reading or sensing multiple bits of data stored by a multi-level cell. In one aspect, a first reference circuit is selected from a first set of reference circuits, and a second reference circuit is selected from a second set of reference circuits. Based at least in part on the first reference circuit and the second reference circuit, one or more bits of multiple bits of data stored by a multi-level cell can be determined. According to the determined one or more bits, a third reference circuit from the first set of reference circuits and a fourth reference circuit from the second set of reference circuits can be selected. Based at least in part on the third reference circuit and the fourth reference circuit, additional one or more bits of the multiple bits of data stored by the multi-level cell can be determined.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: February 1, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Qing Dong, Mahmut Sinangil, Yen-Ting Lin, Kerem Akarvardar, Carlos H. Diaz, Yih Wang
  • Patent number: 11239084
    Abstract: A semiconductor device includes a fin structure disposed over a substrate, a gate structure and a source. The fin structure includes an upper layer being exposed from an isolation insulating layer. The gate structure disposed over part of the upper layer of the fin structure. The source includes the upper layer of the fin structure not covered by the gate structure. The upper layer of the fin structure of the source is covered by a crystal semiconductor layer. The crystal semiconductor layer is covered by a silicide layer formed by Si and a first metal element. The silicide layer is covered by a first metal layer. A second metal layer made of the first metal element is disposed between the first metal layer and the isolation insulating layer.
    Type: Grant
    Filed: July 13, 2020
    Date of Patent: February 1, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jean-Pierre Colinge, Carlos H. Diaz
  • Patent number: 11211492
    Abstract: A semiconductor device includes a field effect transistor (FET). The FET includes a channel region and a source/drain region disposed adjacent to the channel region. The FET also includes a gate electrode disposed over the channel region. The FET is an n-type FET and the channel region is made of Si. The source/drain region includes an epitaxial layer including Si1-x-yM1xM2y, where M1 is one or more of Ge and Sn, and M2 is one or more of P and As, and 0.01?x?0.1.
    Type: Grant
    Filed: September 27, 2019
    Date of Patent: December 28, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Yi Peng, Carlos H. Diaz, Chun Hsiung Tsai, Yu-Ming Lin
  • Publication number: 20210390987
    Abstract: Disclosed herein are related to a circuit and a method of reading or sensing multiple bits of data stored by a multi-level cell. In one aspect, a first reference circuit is selected from a first set of reference circuits, and a second reference circuit is selected from a second set of reference circuits. Based at least in part on the first reference circuit and the second reference circuit, one or more bits of multiple bits of data stored by a multi-level cell can be determined. According to the determined one or more bits, a third reference circuit from the first set of reference circuits and a fourth reference circuit from the second set of reference circuits can be selected. Based at least in part on the third reference circuit and the fourth reference circuit, additional one or more bits of the multiple bits of data stored by the multi-level cell can be determined.
    Type: Application
    Filed: June 15, 2020
    Publication date: December 16, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Qing Dong, Mahmut Sinangil, Yen-Ting Lin, Kerem Akarvardar, Carlos H. Diaz, Yih Wang
  • Patent number: 11167984
    Abstract: A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a first dielectric layer formed over a substrate, and a first conductive layer formed in the first dielectric layer. The NEMS device structure includes a second dielectric layer formed over the first dielectric layer, and a first supporting electrode a second supporting electrode and a beam structure formed in the second dielectric layer. The beam structure is formed between the first supporting electrode and the second supporting electrode, and the beam structure has a T-shaped structure. The NEMS device structure includes a first through hole formed between the first supporting electrode and the beam structure, and a second through hole formed between the second supporting electrode and the beam structure.
    Type: Grant
    Filed: June 8, 2020
    Date of Patent: November 9, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Ping Chen, Carlos H. Diaz, Ken-Ichi Goto, Shau-Lin Shue, Tai-I Yang
  • Patent number: 11152565
    Abstract: A memory device includes a conductive wire, a first 2-D material layer, a phase change element, and a top electrode. The first 2-D material layer is over the conductive wire. The phase change element extends along a surface of the first 2-D material layer distal to the conductive layer. The top electrode is over the phase change element.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: October 19, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Sheng Chen, Da-Ching Chiou, Jau-Yi Wu, Carlos H. Diaz
  • Patent number: 11145806
    Abstract: A device includes a plurality of bottom electrode features, a plurality of Magnetic Tunnel Junction (MTJ) stacks formed on top surfaces of the bottom electrode features, top electrode features formed on top of the MTJ stacks, and an etch stop layer extending along side surfaces of the bottom electrode feature and partially along side surfaces of the MTJ stacks.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: October 12, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Carlos H. Diaz, Harry-Hak-Lay Chuang, Ru-Liang Lee
  • Patent number: 11145748
    Abstract: One or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a channel, such as an un-doped channel, over a substrate. The semiconductor arrangement comprises a gate, such as a gate-all-around structure gate, around the channel. The semiconductor arrangement comprises an isolation structure, such as a silicon germanium oxide structure, between the gate and the substrate. The isolation structure blocks current leakage into the substrate. Because the semiconductor arrangement comprises the isolation structure, the channel can be left un-doped, which improves electron mobility and decreases gate capacitance.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: October 12, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Kuo-Cheng Ching, Ching-Wei Tsai, Chih-Hao Wang, Carlos H. Diaz
  • Patent number: 11127734
    Abstract: An electrostatic discharge (ESD) protection circuit includes an input terminal, a transistor, and an output terminal. The input terminal is configured to receive an input signal. The transistor includes a first source/drain region, a second source/drain region, and a drift region that has a resistance in series between the first and second source/drain regions and that is configured to attenuate an ESD voltage in the input signal. The output terminal is connected to the second source/drain region.
    Type: Grant
    Filed: November 7, 2019
    Date of Patent: September 21, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Jean-Pierre Colinge, Ta-Pen Guo, Carlos H. Diaz
  • Patent number: 11114540
    Abstract: A semiconductor device includes a first potential supply line for supplying a first potential, a second potential supply line for supplying a second potential lower than the first potential, a functional circuit, and at least one of a first switch disposed between the first potential supply line and the functional circuit and a second switch disposed between the second potential supply line and the functional circuit. The first switch and the second switch are negative capacitance FET.
    Type: Grant
    Filed: November 4, 2019
    Date of Patent: September 7, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Hsing Lee, Chih-Sheng Chang, Wilman Tsai, Chia-Wen Chang, Ling-Yen Yeh, Carlos H. Diaz
  • Publication number: 20210273100
    Abstract: A multi-gate semiconductor device is formed that provides a first fin element extending from a substrate. A gate structure extends over a channel region of the first fin element. The channel region of the first fin element includes a plurality of channel semiconductor layers each surrounded by a portion of the gate structure. A source/drain region of the first fin element is adjacent the gate structure. The source/drain region includes a first semiconductor layer, a dielectric layer over the first semiconductor layer, and a second semiconductor layer over the dielectric layer.
    Type: Application
    Filed: May 18, 2021
    Publication date: September 2, 2021
    Inventors: Kuo-Cheng CHING, Ching-Wei TSAI, Carlos H. DIAZ, Chih-Hao WANG, Wai-Yi LIEN, Ying-Keung LEUNG