Patents by Inventor Carsten VON HAENISCH

Carsten VON HAENISCH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10269562
    Abstract: The invention provides the use of at least one binary group 15 element compound of the general formula R1R2E-E?R3R4 (I) or R5E(E?R6R7)2 (II) as the educt in a vapor deposition process. In this case, R1, R2, R3 and R4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E? are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.
    Type: Grant
    Filed: September 25, 2015
    Date of Patent: April 23, 2019
    Assignee: PHILIPPS-UNIVERSITÄT MARBURG
    Inventors: Carsten Von Haenisch, Kerstin Volz, Wolfgang Stolz, Eduard Sterzer, Andreas Beyer, Dominik Keiper, Benjamin Ringler
  • Publication number: 20170243740
    Abstract: The invention provides the use of at least one binary group 15 element compound of the general formula R1R2E-E?R3R4 (I) or R5E(E?R6R7)2 (II) as the educt in a vapor deposition process. In this case, R1, R2, R3 and R4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E? are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.
    Type: Application
    Filed: September 25, 2015
    Publication date: August 24, 2017
    Applicant: Philipps-Universität Marburg
    Inventors: Carsten VON HAENISCH, Kerstin VOLZ, Wolfgang STOLZ, Eduard STERZER, Andreas BEYER, Dominik KEIPER, Benjamin RINGLER