Abstract: A method for determining a calibrated measurement value for a concentration of the target gas comprises obtaining a measurement signal based on the concentration of the target gas. The method further comprises determining the calibrated measurement value based on the measurement signal and based on a calibration model. The calibration model is based on calibration data of a plurality of test sensor units having the same type as the sensor unit.

Abstract: An apparatus includes a semiconductor-based substrate with a functional structure that is formed in or on the semiconductor-based substrate. The apparatus includes a frame structure surrounding the functional structure and includes a coating that covers the functional structure and is delimited by the frame structure.

Abstract: A gas sensing device includes chemoresistive gas sensing elements, wherein a material composition of a first chemoresistive gas sensing element is similar to a material composition of a second chemoresistive gas sensing element, wherein the first chemoresistive gas sensing element is exposed to an ambient mixture of gases so that first sensing signals depend on a concentration of a first gas and on a concentration of a second gas, wherein the gas sensing device includes a gas filter so that the second sensing signals depend on the concentration of the first gas to a lesser degree than the first sensor signals and so that the second sensing signals depend on the concentration of the second gas, and wherein the gas sensing device estimates the concentration of the first gas and/or the concentration of the second gas based on the first sensing signals and the second sensing signals.

Abstract: A gas sensing device includes chemoresistive gas sensing elements, wherein a material composition of a first chemoresistive gas sensing element is similar to a material composition of a second chemoresistive gas sensing element, wherein the first chemoresistive gas sensing element is exposed to an ambient mixture of gases so that first sensing signals depend on a concentration of a first gas and on a concentration of a second gas, wherein the gas sensing device includes a gas filter so that the second sensing signals depend on the concentration of the first gas to a lesser degree than the first sensor signals and so that the second sensing signals depend on the concentration of the second gas, and wherein the gas sensing device estimates the concentration of the first gas and/or the concentration of the second gas based on the first sensing signals and the second sensing signals.

Abstract: A gas sensing device includes gas sensors for generating signal samples corresponding to a concentration of a gas; a heat source for heating the gas sensors according to a first temperature profile during recovery phases and according to a second temperature profile during sense phases, a preprocessing processor for preprocessing the received signal samples; a feature extraction processor for extracting feature values from the preprocessed signal samples; a humidity processor for estimating a humidity value of the mixture of gases, including a first trained model based algorithm processor, and wherein the humidity value is based on an output of the first algorithm processor; a gas concentration processor for creating sensing results, wherein the gas concentration processor comprises a second trained model based algorithm processor, wherein the sensing results are based on output values of the second algorithm processor, and wherein the sensing results depend on the humidity value.

Abstract: A method for determining a calibrated measurement value for a concentration of the target gas comprises obtaining a measurement signal based on the concentration of the target gas. The method further comprises determining the calibrated measurement value based on the measurement signal and based on a calibration model. The calibration model is based on calibration data of a plurality of test sensor units having the same type as the sensor unit.

Abstract: A gas sensing device includes chemoresistive gas sensing elements, wherein a material composition of a first chemoresistive gas sensing element is similar to a material composition of a second chemoresistive gas sensing element, wherein the first chemoresistive gas sensing element is exposed to an ambient mixture of gases so that first sensing signals depend on a concentration of a first gas and on a concentration of a second gas, wherein the gas sensing device includes a gas filter so that the second sensing signals depend on the concentration of the first gas to a lesser degree than the first sensor signals and so that the second sensing signals depend on the concentration of the second gas, and wherein the gas sensing device estimates the concentration of the first gas and/or the concentration of the second gas based on the first sensing signals and the second sensing signals.

Abstract: A gas sensing device comprises a sensing unit for sensing a target gas, the sensing unit comprising a carbon-based sensing layer which is sensitive to the target gas. The gas sensing device further comprises a controller unit for monitoring an exposure of the sensing layer to the target gas. The controller unit further initializes a recovery sequence for the sensing unit depending on an exposure of the sensing unit to the target gas. Further, the gas sensing device comprises a heating electrode for heating the sensing layer during the recovery sequence.

Abstract: An apparatus includes a semiconductor-based substrate with a functional structure that is formed in or on the semiconductor-based substrate. The apparatus includes a frame structure surrounding the functional structure and includes a coating that covers the functional structure and is delimited by the frame structure.

Abstract: An apparatus includes a semiconductor-based substrate with a functional structure that is formed in or on the semiconductor-based substrate. The apparatus includes a frame structure surrounding the functional structure and includes a coating that covers the functional structure and is delimited by the frame structure.

Abstract: A gas sensing device includes gas sensors for generating signal samples corresponding to a concentration of a gas; a heat source for heating the gas sensors according to a first temperature profile during recovery phases and according to a second temperature profile during sense phases, a preprocessing processor for preprocessing the received signal samples; a feature extraction processor for extracting feature values from the preprocessed signal samples; a humidity processor for estimating a humidity value of the mixture of gases, including a first trained model based algorithm processor, and wherein the humidity value is based on an output of the first algorithm processor; a gas concentration processor for creating sensing results, wherein the gas concentration processor comprises a second trained model based algorithm processor, wherein the sensing results are based on output values of the second algorithm processor, and wherein the sensing results depend on the humidity value.

Abstract: According to an embodiment of a method of manufacturing a plurality of semiconductor devices on a wafer, the method includes forming a structure layer comprising a plurality of same semiconductor device structures and providing a protective layer on the structure layer. The protective layer on a first one of the plurality of semiconductor device structures differs from the protective layer on a second one of the plurality of semiconductor device structures.

Abstract: An apparatus includes a semiconductor-based substrate with a functional structure that is formed in or on the semiconductor-based substrate. The apparatus includes a frame structure surrounding the functional structure and includes a coating that covers the functional structure and is delimited by the frame structure.

Abstract: A method for forming a semiconductor device and semiconductor device is disclosed. In one example, the method includes forming a silicone layer on a semiconductor die. The method further includes plasma treating a silicone surface of the silicone layer. A surfactant is deposited on the plasma-treated silicone surface of the silicone layer to obtain a silicone surface at least partly covered by surfactant. A mold is formed on the silicone surface at least partly covered by surfactant. The surfactant includes surfactant molecules comprising an inorganic skeleton terminated by organic compounds.

Abstract: According to various embodiments, a method for processing a substrate may include: processing a plurality of device regions in a substrate separated from each other by dicing regions, each device region including at least one electronic component; wherein processing each device region of the plurality of device regions includes: forming a recess into the substrate in the device region, wherein the recess is defined by recess sidewalls of the substrate, wherein the recess sidewalls are arranged in the device region; forming a contact pad in the recess to electrically connect the at least one electronic component, wherein the contact pad has a greater porosity than the recess sidewalls; and singulating the plurality of device regions from each other by dicing the substrate in the dicing region.

Abstract: According to an embodiment of a method of manufacturing a plurality of semiconductor devices on a wafer, the method includes forming a structure layer comprising a plurality of same semiconductor device structures and providing a protective layer on the structure layer. The protective layer on a first one of the plurality of semiconductor device structures differs from the protective layer on a second one of the plurality of semiconductor device structures.

Abstract: A method for forming a semiconductor device and semiconductor device is disclosed. In one example, the method includes forming a silicone layer on a semiconductor die. The method further includes plasma treating a silicone surface of the silicone layer. A surfactant is deposited on the plasma-treated silicone surface of the silicone layer to obtain a silicone surface at least partly covered by surfactant. A mold is formed on the silicone surface at least partly covered by surfactant. The surfactant includes surfactant molecules comprising an inorganic skeleton terminated by organic compounds.

Abstract: According to various embodiments, a method for processing a substrate may include: processing a plurality of device regions in a substrate separated from each other by dicing regions, each device region including at least one electronic component; wherein processing each device region of the plurality of device regions includes: forming a recess into the substrate in the device region, wherein the recess is defined by recess sidewalls of the substrate, wherein the recess sidewalls are arranged in the device region; forming a contact pad in the recess to electrically connect the at least one electronic component, wherein the contact pad has a greater porosity than the recess sidewalls; and singulating the plurality of device regions from each other by dicing the substrate in the dicing region.