Abstract: In a method for receive beamforming using an array of ultrasonic transducers, a plurality of array positions comprising pluralities of ultrasonic transducers of the array of ultrasonic transducers is defined. A pixel capture operation is performed at each array position of the plurality of array positions. The pixel capture operation includes transmitting ultrasonic signals using a transmit beam pattern comprising ultrasonic transducers of the array of ultrasonic transducers, the transmit beam pattern for forming an ultrasonic beam toward a region of interest, and receiving reflected ultrasonic signals using a receive beam pattern comprising at least one ultrasonic transducer of the array of ultrasonic transducers. Received reflected ultrasonic signals are combined for a plurality of array positions overlapping the region of interest in a receive beamforming operation to generate a pixel for a reference array position of the plurality of array positions.

Abstract: Integration of self-biased magnetic circulators with microwave devices is disclosed herein. In microwave and other high-frequency radio frequency (RF) applications, a magnetic circulator can be implemented with a smaller permanent magnet. Aspects disclosed herein include a process flow for producing a self-biased circulator in an integrated circuit chip. In this regard, a magnetic circulator junction can be fabricated on an active layer of a semiconductor wafer. A deep pocket or cavity is formed in an insulating substrate under the active layer. This cavity is then filled with a ferromagnetic material such that the circulator junction is self-biased within the integrated circuit chip, eliminating the need for an external magnet. The self-biased circulator provides high isolation between ports in a smaller integrated circuit.

Abstract: Fabricating high efficiency, high linearity N-polar gallium-nitride (GaN) transistors by selective area regrowth is disclosed. A demand for high efficiency components with highly linear performance characteristics for radio frequency (RF) systems has increased development of GaN transistors and, in particular, aluminum-gallium-nitride (AlGaN)/GaN high electron mobility transistor (HEMT) devices. A method of fabricating a high efficiency, high linearity N-polar HEMT device includes employing a selective area regrowth method for forming a HEMT structure on the Nitrogen-face (N-face) of a GaN buffer, a natural high composition AlGaN/AlN back barrier for carrier confinement, a thick undoped GaN layer on the access areas to eliminate surface dispersion, and a high access area width to channel width ratio for improved linearity. A problem of impurities on the GaN buffer surface prior to regrowth creating a leakage path is avoided by intentional silicon (Si) doping in the HEMT structure.

Abstract: Integration of self-biased magnetic circulators with microwave devices is disclosed herein. In microwave and other high-frequency radio frequency (RF) applications, a magnetic circulator can be implemented with a smaller permanent magnet. Aspects disclosed herein include a process flow for producing a self-biased circulator in an integrated circuit chip. In this regard, a magnetic circulator junction can be fabricated on an active layer of a semiconductor wafer. A deep pocket or cavity is formed in an insulating substrate under the active layer. This cavity is then filled with a ferromagnetic material such that the circulator junction is self-biased within the integrated circuit chip, eliminating the need for an external magnet. The self-biased circulator provides high isolation between ports in a smaller integrated circuit.

Abstract: The present disclosure relates to a process of forming a semiconductor device with a high thermal conductivity substrate. According to an exemplary process, a semiconductor precursor including a substrate structure, a buffer structure over the substrate structure, and a channel structure over the buffer structure is provided. The channel structure has a first channel surface and a second channel surface, which is opposite the first channel surface, adjacent to the buffer structure, and has a first polarity. Next, a high thermal conductivity substrate with a thermal conductivity greater than 400 W/mK is formed over the first channel surface. A heat sink carrier is then provided over the high thermal conductivity substrate. Next, the substrate structure and the buffer structure are removed to provide a thermally enhanced semiconductor device with an exposed surface, which has the first polarity.

Abstract: The present disclosure relates to a process of forming a high thermal conductivity substrate for an Aluminum/Gallium/Indium (III)-Nitride semiconductor device. According to an exemplary process, a semiconductor precursor including a substrate structure and a buffer structure is provided. The buffer structure is formed over the substrate structure and has a first buffer surface and a second buffer surface. Herein, the second buffer surface is adjacent to the substrate structure and the first buffer surface is opposite the second buffer surface. Next, a high thermal conductivity substrate with a thermal conductivity greater than 400 W/mK is formed over the first buffer surface. A heat sink carrier is then provided over the high thermal conductivity substrate. The substrate structure is then substantially removed to provide a thermally enhanced precursor for the III-Nitride semiconductor device.

Abstract: The present disclosure relates to a process of forming a high thermal conductivity substrate for an Aluminum/Gallium/Indium (III)-Nitride semiconductor device. According to an exemplary process, a semiconductor precursor including a substrate structure and a buffer structure is provided. The buffer structure is formed over the substrate structure and has a first buffer surface and a second buffer surface. Herein, the second buffer surface is adjacent to the substrate structure and the first buffer surface is opposite the second buffer surface. Next, a high thermal conductivity substrate with a thermal conductivity greater than 400 W/mK is formed over the first buffer surface. A heat sink carrier is then provided over the high thermal conductivity substrate. The substrate structure is then substantially removed to provide a thermally enhanced precursor for the III-Nitride semiconductor device.

Abstract: The present disclosure relates to a process of forming a semiconductor device with a high thermal conductivity substrate. According to an exemplary process, a semiconductor precursor including a substrate structure, a buffer structure over the substrate structure, and a channel structure over the buffer structure is provided. The channel structure has a first channel surface and a second channel surface, which is opposite the first channel surface, adjacent to the buffer structure, and has a first polarity. Next, a high thermal conductivity substrate with a thermal conductivity greater than 400 W/mK is formed over the first channel surface. A heat sink carrier is then provided over the high thermal conductivity substrate. Next, the substrate structure and the buffer structure are removed to provide a thermally enhanced semiconductor device with an exposed surface, which has the first polarity.

Abstract: A mobile nursing home unit is formed by an upright cabinet containing an assembly of nursing facilities including a sink and a superposed gray water tank and fresh water reservoir selectively supplying water to and draining from the sink into the gray water tank. Miscelleanous washcloths, soaps, lotions, towels and other desired small items are temporarily stored on the cabinet top wall and maintained thereon during mobile movement of the cabinet by a kitchen rail extending along adjacent edge limits of the top wall.