Patents by Inventor Chandra Sekhar MURAPAKA

Chandra Sekhar MURAPAKA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9502090
    Abstract: A memory device comprising a ferromagnetic data nanowire, a ferromagnetic driver nanowire, read element and/or a spaced write element positioned about the data nanowire, wherein driving a domain wall in the driver nanowire remotely drives a domain wall in the data nanowire past the read element and/or the write element.
    Type: Grant
    Filed: January 2, 2014
    Date of Patent: November 22, 2016
    Assignee: NANYANG TECHNOLOGICAL UNIVERSITY
    Inventors: Wen Siang Lew, Indra Purnama, Chandra Sekhar Murapaka
  • Publication number: 20160133827
    Abstract: A non-volatile logic device, comprising: a first input element magnetizable along a first direction to impart or change a chirality of a domain wall traversing the first input element a second input element configured to transport the domain wall, a magnetization of the second input element along a second direction representing a second logical input; a bifurcated output section comprising a pair of output elements for receiving the domain wall from the second input element, a magnetization of at least part of the output elements being changeable by propagation of the domain wall along the output elements; and a non-magnetic conductive element; wherein the magnetization in an output element after propagation of the domain wall represents a value of a logical function selectable by passing an electrical current through the non-magnetic conductive element to induce a magnetic field of a desired magnitude and direction in the second input element.
    Type: Application
    Filed: May 19, 2013
    Publication date: May 12, 2016
    Inventors: Wen Siang LEW, Chandra Sekhar MURAPAKA, Indra PURNAMA, Sarjoosing GOOLAUP, Pankaj SETHI, Chinkhanlun GUITE
  • Publication number: 20160064060
    Abstract: A method of forming a domain wall in a nanowire, the method comprising the steps of: a) providing a conductive strip orthogonally to a nanowire adjacent a free end of the nanowire, the nanowire having an original magnetization direction; b) pulsing a current through the conductive strip to generate an Oersted field having a direction opposite to the original magnetization direction such that magnetization direction of a portion of the nanowire transversed by the conductive strip becomes opposite to the original magnetization direction, the domain wall being generated in the nanowire at a location defined between the portion of the nanowire transversed by the conductive strip and a second end of the nanowire, wherein no external magnetic field is provided during formation of the domain wall.
    Type: Application
    Filed: September 2, 2015
    Publication date: March 3, 2016
    Inventors: Chinkhanlun GUITE, Inn Seng KERK, Chandra Sekhar MURAPAKA, Wen Siang LEW
  • Publication number: 20150371696
    Abstract: A memory device comprising a ferromagnetic data nanowire, a ferromagnetic driver nanowire, read element and/or a spaced write element positioned about the data nanowire, wherein driving a domain wall in the driver nanowire remotely drives a domain wall in the data nanowire past the read element and/or the write element.
    Type: Application
    Filed: January 2, 2014
    Publication date: December 24, 2015
    Inventors: Wen Siang LEW, Indra PURNAMA, Chandra Sekhar MURAPAKA