Patents by Inventor Chandrasekhar Narayan
Chandrasekhar Narayan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12135927Abstract: A set of material candidates expected to yield materials with target properties can be generated. A subject matter expert's decision indicating accepted and rejected material candidates from the set of material candidates can be received. Based on the subject matter expert's input, a machine learning model can be trained to replicate the subject matter expert's decision.Type: GrantFiled: March 31, 2020Date of Patent: November 5, 2024Assignee: International Business Machines CorporationInventors: Petar Ristoski, Dmitry Zubarev, Linda Ha Kato, Anna Lisa Gentile, Nathaniel H. Park, Daniel Gruhl, Steven R. Welch, Daniel Paul Sanders, James L. Hedrick, Chandrasekhar Narayan, Chad Eric DeLuca, Alfredo Alba
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Patent number: 11663273Abstract: A method for ranking relevance of documents includes using a set of queries, searching a corpus of documents for a set of candidate documents with information relevant to the set of queries. The method further includes ranking the set of candidate documents by a deep learning processing system according to relevance to respective ones of the set of queries. The method additionally includes responsive to user input, revising the ranked set of candidate documents to produce a revised ranked set of candidate documents. The method further includes using the revised ranked set of candidate documents to retrain the deep learning processing system. The method still further includes performing a categorization of the set of candidate documents by the retrained deep learning processing system.Type: GrantFiled: June 30, 2020Date of Patent: May 30, 2023Assignee: International Business Machines CorporationInventors: Daniel Gruhl, Linda Ha Kato, Petar Ristoski, Steven R. Welch, Chad Eric DeLuca, Anna Lisa Gentile, Alfredo Alba, Dmitry Zubarev, Chandrasekhar Narayan, Nathaniel H. Park
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Publication number: 20210406314Abstract: A method for ranking relevance of documents includes using a set of queries, searching a corpus of documents for a set of candidate documents with information relevant to the set of queries. The method further includes ranking the set of candidate documents by a deep learning processing system according to relevance to respective ones of the set of queries. The method additionally includes responsive to user input, revising the ranked set of candidate documents to produce a revised ranked set of candidate documents. The method further includes using the revised ranked set of candidate documents to retrain the deep learning processing system. The method still further includes performing a categorization of the set of candidate documents by the retrained deep learning processing system.Type: ApplicationFiled: June 30, 2020Publication date: December 30, 2021Inventors: Daniel Gruhl, Linda Ha Kato, Petar Ristoski, Steven R. Welch, Chad Eric DeLuca, Anna Lisa Gentile, Alfredo Alba, Dmitry Zubarev, Chandrasekhar Narayan, Nathaniel H. Park
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Publication number: 20210303762Abstract: A set of material candidates expected to yield materials with target properties can be generated. A subject matter expert's decision indicating accepted and rejected material candidates from the set of material candidates can be received. Based on the subject matter expert's input, a machine learning model can be trained to replicate the subject matter expert's decision.Type: ApplicationFiled: March 31, 2020Publication date: September 30, 2021Inventors: Petar Ristoski, Dmitry Zubarev, Linda Ha Kato, Anna Lisa Gentile, Nathaniel H. Park, Daniel Gruhl, Steven R. Welch, Daniel Paul Sanders, James L. Hedrick, Chandrasekhar Narayan, Chad Eric DeLuca, Alfredo Alba
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Publication number: 20210304852Abstract: Candidate material for polymerization can be received. One or more desired features in the candidate material can be identified. A machine learning model can be trained to generate a new material having one or more of the desired features. Permissively, the candidate material can be determined from running a machine learning classification model that ranks a plurality of material as candidates. Permissively, the generated new material can be input to the machine learning classification model, for the machine learning classification model to include in ranking the plurality of material as candidates.Type: ApplicationFiled: March 31, 2020Publication date: September 30, 2021Inventors: Petar Ristoski, Dmitry Zubarev, Linda Ha Kato, Anna Lisa Gentile, Nathaniel H. Park, Daniel Gruhl, Steven R. Welch, Daniel Paul Sanders, James L. Hedrick, Chandrasekhar Narayan, Chad Eric DeLuca, Alfredo Alba
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Patent number: 10486268Abstract: A first substrate, bonded to a second substrate by a material, is provided. The first substrate is transparent to at least some wavelengths of electromagnetic radiation. The first substrate is irradiated with the electromagnetic radiation to which the first substrate is transparent, such that the electromagnetic radiation impinges on the material causing a decomposition thereof at a location at an interface between the first substrate and the material. The decomposition results in, at the location, an interface of the first substrate and an atmosphere of the decomposition. The atmosphere of the decomposition has an optical property resulting in ceasing the decomposition of the material.Type: GrantFiled: February 18, 2017Date of Patent: November 26, 2019Assignee: International Business Machines CorporationInventors: Fuad E. Doany, Chandrasekhar Narayan
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Publication number: 20170157712Abstract: A first substrate, bonded to a second substrate by a material, is provided. The first substrate is transparent to at least some wavelengths of electromagnetic radiation. The first substrate is irradiated with the electromagnetic radiation to which the first substrate is transparent, such that the electromagnetic radiation impinges on the material causing a decomposition thereof at a location at an interface between the first substrate and the material. The decomposition results in, at the location, an interface of the first substrate and an atmosphere of the decomposition. The atmosphere of the decomposition has an optical property resulting in ceasing the decomposition of the material.Type: ApplicationFiled: February 18, 2017Publication date: June 8, 2017Inventors: Fuad E. Doany, Chandrasekhar Narayan
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Patent number: 9640765Abstract: Embodiments of the present invention provide a method of forming carbon nanotube based semiconductor devices. The method includes creating a guiding structure in a substrate for forming a device; dispersing a plurality of carbon nanotubes inside the guiding structure, the plurality of carbon nanotubes having an orientation determined by the guiding structure; fixating the plurality of carbon nanotubes to the guiding structure; and forming one or more contacts to the device. Structure of the formed carbon nanotube device is also provided.Type: GrantFiled: June 23, 2016Date of Patent: May 2, 2017Assignee: GLOBALFOUNDRIES INC.Inventors: Lawrence A. Clevenger, Chandrasekhar Narayan, Gregory A. Northrop, Carl J. Radens, Brian C. Sapp
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Patent number: 9576836Abstract: A first substrate, bonded to a second substrate by a material, is provided. The first substrate is transparent to at least some wavelengths of electromagnetic radiation. The first substrate is irradiated with the electromagnetic radiation to which the first substrate is transparent, such that the electromagnetic radiation impinges on the material causing a decomposition thereof at a location at an interface between the first substrate and the material. The decomposition results in, at the location, an interface of the first substrate and an atmosphere of the decomposition. The atmosphere of the decomposition has an optical property resulting in ceasing the decomposition of the material.Type: GrantFiled: November 3, 2015Date of Patent: February 21, 2017Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Fuad E. Doany, Chandrasekhar Narayan
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Publication number: 20160336515Abstract: Embodiments of the present invention provide a method of forming carbon nanotube based semiconductor devices. The method includes creating a guiding structure in a substrate for forming a device; dispersing a plurality of carbon nanotubes inside the guiding structure, the plurality of carbon nanotubes having an orientation determined by the guiding structure; fixating the plurality of carbon nanotubes to the guiding structure; and forming one or more contacts to the device. Structure of the formed carbon nanotube device is also provided.Type: ApplicationFiled: June 23, 2016Publication date: November 17, 2016Inventors: Lawrence A. Clevenger, Chandrasekhar Narayan, Gregory A. Northrop, Carl J. Radens, Brian C. Sapp
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Patent number: 9406888Abstract: Embodiments of the present invention provide a method of forming carbon nanotube based semiconductor devices. The method includes creating a guiding structure in a substrate for forming a device; dispersing a plurality of carbon nanotubes inside the guiding structure, the plurality of carbon nanotubes having an orientation determined by the guiding structure; fixating the plurality of carbon nanotubes to the guiding structure; and forming one or more contacts to the device. Structure of the formed carbon nanotube device is also provided.Type: GrantFiled: August 7, 2013Date of Patent: August 2, 2016Assignee: GlobalFoundries, Inc.Inventors: Lawrence A. Clevenger, Chandrasekhar Narayan, Gregory Allen Northrop, Carl John Radens, Brian Christopher Sapp
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Publication number: 20160133468Abstract: A first substrate, bonded to a second substrate by a material, is provided. The first substrate is transparent to at least some wavelengths of electromagnetic radiation. The first substrate is irradiated with the electromagnetic radiation to which the first substrate is transparent, such that the electromagnetic radiation impinges on the material causing a decomposition thereof at a location at an interface between the first substrate and the material. The decomposition results in, at the location, an interface of the first substrate and an atmosphere of the decomposition. The atmosphere of the decomposition has an optical property resulting in ceasing the decomposition of the material.Type: ApplicationFiled: November 3, 2015Publication date: May 12, 2016Inventors: Fuad E. Doany, Chandrasekhar Narayan
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Patent number: 9058887Abstract: The present invention provides a reprogrammable electrically blowable fuse and associated design structure. The electrically blowable fuse is programmed using an electro-migration effect and is reprogrammed using a reverse electro-migration effect. The state (i.e., “opened” or “closed”) of the electrically blowable fuse is determined by a sensing system which compares a resistance of the electrically blowable fuse to a reference resistance.Type: GrantFiled: October 30, 2007Date of Patent: June 16, 2015Assignee: International Business Machines CorporationInventors: Louis C. Hsu, Conal E. Murray, Chandrasekhar Narayan, Chih-Chao Yang
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Publication number: 20150041763Abstract: Embodiments of the present invention provide a method of forming carbon nanotube based semiconductor devices. The method includes creating a guiding structure in a substrate for forming a device; dispersing a plurality of carbon nanotubes inside the guiding structure, the plurality of carbon nanotubes having an orientation determined by the guiding structure; fixating the plurality of carbon nanotubes to the guiding structure; and forming one or more contacts to the device. Structure of the formed carbon nanotube device is also provided.Type: ApplicationFiled: August 7, 2013Publication date: February 12, 2015Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Lawrence A. Clevenger, Chandrasekhar Narayan, Gregory Allen Northrop, Carl John Radens, Brian Christopher Sapp
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Patent number: 8829986Abstract: Disclosed is a synaptic element that uses electro-migration in an interconnect structure, wherein the interconnect structure is optimized to give control of resistivity change following current flow. The synaptic element exhibits resistivity that is a function of the amount (of charge) and direction of current flow, wherein a continuously variable resistance is obtained by controlling the volume of a designed void in the interconnect structure.Type: GrantFiled: May 22, 2013Date of Patent: September 9, 2014Assignee: International Business Machines CorporationInventors: Lawrence A Clevenger, Chandrasekhar Narayan, Gregory A Northrop, Carl J Radens, Brian C Sapp
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Patent number: 8463723Abstract: An electronic synapse device is provided. One embodiment of the invention includes a metastable switching synaptic device. Changing conductance of the metastable switching synaptic device occurs by receiving opposite signed first and second voltage pulses at the metastable switching synaptic device where magnitude of the first voltage pulse and the second voltage pulse each are below a switching voltage magnitude threshold. A magnitude difference between the first voltage pulse and the second voltage pulse exceeds the switching voltage magnitude threshold by an amount, wherein the amount is a function of a relative timing between the first voltage pulse and the second voltage pulse.Type: GrantFiled: March 1, 2009Date of Patent: June 11, 2013Assignee: International Business Machines CorporationInventors: Dharmendra S. Modha, Chandrasekhar Narayan, John C. Scott
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Patent number: 8416537Abstract: In one embodiment, a read sensor for a recording head for a magnetic media storage system, has first and second shields, and a magneto-resistive sensor disposed between and shielded by the first and second shields in which the sensing axis of the sensor is tilted with respect to the recording surface of the head. In one embodiment, the sensing axis is oriented at an angle between 10 and 60 degrees with respect to the normal of the recording surface. Other embodiments are described and claimed.Type: GrantFiled: November 6, 2009Date of Patent: April 9, 2013Assignee: International Business Machines CorporationInventors: David Berman, Robert G. Biskeborn, Michel Despont, Philipp Herget, Wayne Isami Imaino, Pierre-Olivier Jubert, Peter V. Koeppe, Chandrasekhar Narayan
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Publication number: 20110109998Abstract: In one embodiment, a read sensor for a recording head for a magnetic media storage system, has first and second shields, and a magneto-resistive sensor disposed between and shielded by the first and second shields in which the sensing axis of the sensor is tilted with respect to the recording surface of the head. In one embodiment, the sensing axis is oriented at an angle between 10 and 60 degrees with respect to the normal of the recording surface. Other embodiments are described and claimed.Type: ApplicationFiled: November 6, 2009Publication date: May 12, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: David Berman, Robert G. Biskeborn, Michel Despont, Philipp Herget, Wayne Isami Imaino, Pierre-Olivier Jubert, Peter V. Koeppe, Chandrasekhar Narayan
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Patent number: 7804148Abstract: An opto-thermal annealing mask stack layer includes a thermal dissipative layer located over a substrate. A reflective layer is located upon the thermal dissipative layer. A transparent capping layer, that may have a thickness from about 10 to about 100 angstroms, is located upon the reflective layer. The opto-thermal annealing mask layer may be used as a gate electrode within a field effect device.Type: GrantFiled: February 16, 2006Date of Patent: September 28, 2010Assignee: International Business Machines CorporationInventors: Louis L. Hsu, Jack A. Mandelman, Chandrasekhar Narayan, Chun-Yung Sung
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Publication number: 20100223220Abstract: An electronic synapse device is provided. One embodiment of the invention includes a metastable switching synaptic device. Changing conductance of the metastable switching synaptic device occurs by receiving opposite signed first and second voltage pulses at the metastable switching synaptic device where magnitude of the first voltage pulse and the second voltage pulse each are below a switching voltage magnitude threshold. A magnitude difference between the first voltage pulse and the second voltage pulse exceeds the switching voltage magnitude threshold by an amount, wherein the amount is a function of a relative timing between the first voltage pulse and the second voltage pulse.Type: ApplicationFiled: March 1, 2009Publication date: September 2, 2010Applicant: INTERNAIONAL BUSINESS MACHINES CORPORATIONInventors: Dharmendra S. Modha, Chandrasekhar Narayan, John C. Scott