Abstract: Provided are a biosensor and a method for detecting biomolecules by using the biosensor. The biosensor includes a detection unit and a fluid channel. The detection unit is disposed on a substrate and has a surface to which detection target molecules binding specifically to probe molecules are immobilized. The fluid channel is configured to provide an analysis solution containing the probe molecules to the detection target molecules. The probe molecules bind specifically to the target molecules and the detection target molecules.

Abstract: A biosensor reader and a biosensor reader system are provided. The biosensor reader has a field-effect transistor (FET) biosensor attached thereto, and the FET biosensor includes between electrodes a probe channel to which probe materials are immobilized. The biosensor reader analyzes an electrical conductivity change of the probe channel caused by the binding between the probe material and a target material contained in an analysis solution. The biosensor reader includes a measurement module and an output module. The measurement module connects the probe channel electrically to a reference resistance with a fixed resistance value by the attachment of the FET biosensor, measures a reference voltage drop across the reference resistance and a channel voltage drop across the probe channel, and analyzes an electrical conductivity change of the probe channel from the reference voltage drop and the channel voltage drop.

Abstract: Provided is a bio-sensor chip. The bio-sensor chip includes a sensing part, a board circuit part, a channel part, and a cover. In the sensing part, a target material and a detection material interact with each other to detect the target material. The board circuit part is electrically connected to the sensing part. The channel part provides a solution material containing the target material into the sensing part. The cover is coupled to the board circuit part to cover the channel part and the sensing part.

Abstract: Provided is a method of immobilizing an active material on a surface of a substrate. The method including cleaning a substrate, functionalizing a surface of the substrate using a hydroxyl group, functionalizing the surface of the substrate at atmospheric pressure using a vaporized organic silane compound, and immobilizing an active material to an end of the surface of the substrate. Therefore, since evacuation or the use of carrier gas is not necessary, a uniform, high-density, single-molecular, silane compound film can be formed inexpensively, simply, and reproducibly, and an active material can be immobilized to the single-molecular silane compound film.

Abstract: Provided are a method of manufacturing a semiconductor nanowire sensor device and a semiconductor nanowire sensor device manufactured according to the method. The method includes preparing a first conductive type single crystal semiconductor substrate, forming a line-shaped first conductive type single crystal pattern from the first conductive type single crystal semiconductor substrate, forming second conductive type epitaxial patterns on both sidewalls of the first conductive type single crystal pattern, and forming source and drain electrodes at both ends of the second conductive type epitaxial patterns.

Abstract: Provided is a biosensor which can detect a specific biomaterial by an interaction between target molecules and probe molecules, and a manufacturing method thereof. The biosensor includes: a first conductive semiconductor substrate; a second conductive doping layer formed on the semiconductor substrate; an electrode formed on top of both opposite ends of the doping layer; and probe molecules immobilized on the doping layer.

Abstract: Provided is a method for selectively functionalizing unmodified solid surface, not oxidized and nitrified, into an aldehyde group, and a method for immobilizing an active material such as bio material or functional material on the functionalized aldehyde solid surface through strong and stable chemical bonding. Differently from a conventional method immobilizing deoxyribonucleic acid (DNA) using a cross linker, the method of the present invention does not require a cross linker reaction step to thereby shorten a process. Also, since a cross linker is absent, the monomolecular layer on the surface of a device is thin, which reduces a perturbation effect by molecular layer. This is useful in fabrication of molecular electronic devices and bio-active devices.

Abstract: There are provided a nanowire filter, a method for manufacturing the same, a filtering apparatus having the same, and a method for removing material adsorbed on the nanowire filter. The filtering apparatus includes: a filter having a supporting member and a plurality of nanowires supported on the supporting member and arranged in a crystallized state; and a body into which the filter is inserted and secured, and which has an inlet for guiding an introduced fluid to the filter and an outlet for discharging the fluid filtered through the filter to the outside.

Abstract: Provided is a biosensor with a three-dimensional multi-layered structure, a method for manufacturing the biosensor, and a biosensing apparatus including the biosensor. The biosensing apparatus includes: a chamber having an inlet through which a fluid containing a biomaterial enters and an outlet through which the fluid exits; and a plurality of biosensors inserted and fixed in the chamber. Each biosensor includes: a support unit having a fluid channel through which a fluid containing a biomaterial flows; and a sensing unit disposed on the support unit in such a way that the sensing unit is exposed three-dimensionally in the fluid channel of the support unit, the sensing unit being surface-treated with a reactive material that is to react with the biomaterial flowing through the fluid channel.

Abstract: Provided are a substrate for analyzing the coverage of self-assembled molecules and a method for analyzing the coverage of the self-assembled molecules in nanowire and nanochannel patterned on solid surface, solid surface, or bulk solid surface by using the nanoparticles. According to the method, the presence of specific functional groups of self-assembled molecules and the degree of reaction can be analyzed by introducing nanoparticles to a biomaterial immobilization substrate including self-assembled molecules and measuring the number of gold nanoparticles existing on the surface.

Abstract: Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.

Abstract: Provided are a biosensor using a silicon nanowire and a method of manufacturing the same. The silicon nanowire can be formed to have a shape, in which identical patterns are continuously repeated, to enlarge an area in which probe molecules are fixed to the silicon nanowire, thereby increasing detection sensitivity. In addition, the detection sensitivity can be easily adjusted by adjusting a gap between the identical patterns of the silicon nanowire depending on characteristics of target molecules, without adjusting a line width of the silicon nanowire in the conventional art. Further, the gap between the identical patterns of the silicon nanowire can be adjusted depending on characteristics of the target molecule to differentiate detection sensitivities, thereby simultaneously detecting various detection sensitivities.

Abstract: Provided is a method of manufacturing a nano size-gap electrode device. The method includes the steps of: disposing a floated nano structure on a semiconductor layer; forming a mask layer having at least one opening pattern to intersect the nano structure; and depositing a metal on the semiconductor layer exposed through the opening pattern to form an electrode, such that a nano size-gap is provided under the nano structure by the nano structure.

Abstract: Provided is a method of manufacturing a semiconductor device in which properties of photoresist through a lithography process are changed to form a dummy structure, and the structure is applied to a process of forming a gate electrode.

Abstract: Provided is a method of manufacturing a nano size-gap electrode device. The method includes the steps of: disposing a floated nano structure on a semiconductor layer; forming a mask layer having at least one opening pattern to intersect the nano structure; and depositing a metal on the semiconductor layer exposed through the opening pattern to form an electrode, such that a nano size-gap is provided under the nano structure by the nano structure.

Abstract: Provided are a field effect transistor and a method of fabricating the same, wherein the field effect transistor is formed which has a hyperfine channel length by employing a technique for forming a sidewall spacer and adjusting the deposition thickness of a thin film. In the field effect transistor of the present invention, a source junction and a drain junction are thin, and the overlap between the source and the gate and between the drain and the gate is prevented, thereby lowering parasitic resistance. Further, the gate electric field is easily introduced to the drain extending region, so that the carrier concentration is effectively controlled in the channel at the drain. Also, the drain extending region is formed to be thinner than the source, so that the short channel characteristic is excellent.

Abstract: Provided are a field effect transistor and a method of fabricating the same, wherein the field effect transistor is formed which has a hyperfine channel length by employing a technique for forming a sidewall spacer and adjusting the deposition thickness of a thin film. In the field effect transistor of the present invention, a source junction and a drain junction are thin, and the overlap between the source and the gate and between the drain and the gate is prevented, thereby lowering parasitic resistance. Further, the gate electric field is easily introduced to the drain extending region, so that the carrier concentration is effectively controlled in the channel at the drain. Also, the drain extending region is formed to be thinner than the source, so that the short channel characteristic is excellent.

Abstract: Provided are a field effect transistor and a method of fabricating the same, wherein the field effect transistor is formed which has a hyperfine channel length by employing a technique for forming a sidewall spacer and adjusting the deposition thickness of a thin film. In the field effect transistor of the present invention, a source junction and a drain junction are thin, and the overlap between the source and the gate and between the drain and the gate is prevented, thereby lowering parasitic resistance. Further, the gate electric field is easily introduced to the drain extending region, so that the carrier concentration is effectively controlled in the channel at the drain. Also, the drain extending region is formed to be thinner than the source, so that the short channel characteristic is excellent.