Patents by Inventor Chang Heon Park
Chang Heon Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11956712Abstract: Electronic device includes first wireless communication interface; second wireless communication interface; and controller.Type: GrantFiled: January 10, 2022Date of Patent: April 9, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong-woo Lee, Chang-heon Yoon, Jong-min Kim, Sang-hun Park, Sung-min So, Wha-seob Sim, Se-young Oh
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Publication number: 20240112762Abstract: The present disclosure relates to an apparatus for obtaining a raw material which extracts a color raw material for cosmetics having a target color, wherein when a target color development value is input, raw material information is extracted using a genetic algorithm.Type: ApplicationFiled: December 17, 2021Publication date: April 4, 2024Applicant: LG HOUSEHOLD & HEALTH CARE LTD.Inventors: Se Heon OH, Hye Jin JEONG, Chang Young PARK
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Patent number: 9871045Abstract: A semiconductor device includes first conductive patterns adjacent to each other and isolated by a trench including first and second trenches, a second conductive pattern formed in the first trench, and an insulating pattern partially filling the second trench under the second conductive pattern and formed between the first conductive patterns and the second conductive pattern.Type: GrantFiled: December 21, 2011Date of Patent: January 16, 2018Assignee: HYNIX SEMICONDUCTOR INC.Inventors: Seung-Jin Yeom, Noh-Jung Kwak, Chang-Heon Park, Sun-Hwan Hwang
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Patent number: 9728540Abstract: A semiconductor device includes a spacer having a nitride/oxide/nitride (NON) structure. The spacer is disposed between a sidewall of a bit line and a bit line contact and a sidewall of a storage node contact plug to reduce coupling capacitance between the bit line and a storage node contact plug and between the bit line contact and the storage node contact plug.Type: GrantFiled: July 12, 2016Date of Patent: August 8, 2017Assignee: SK HYNIX INC.Inventors: Ky Hyun Han, Chang Heon Park, Dong Gu Choi
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Publication number: 20160322364Abstract: A semiconductor device includes a spacer having a nitride/oxide/nitride (NON) structure. The spacer is disposed between a sidewall of a bit line and a bit line contact and a sidewall of a storage node contact plug to reduce coupling capacitance between the bit line and a storage node contact plug and between the bit line contact and the storage node contact plug.Type: ApplicationFiled: July 12, 2016Publication date: November 3, 2016Inventors: Ky Hyun HAN, Chang Heon PARK, Dong Gu CHOI
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Patent number: 9419002Abstract: A semiconductor device includes a spacer having a nitride/oxide/nitride (NON) structure. The spacer is disposed between a sidewall of a bit line and a bit line contact and a sidewall of a storage node contact plug to reduce coupling capacitance between the bit line and a storage node contact plug and between the bit line contact and the storage node contact plug.Type: GrantFiled: August 29, 2014Date of Patent: August 16, 2016Assignee: SK HYNIX INC.Inventors: Ky Hyun Han, Chang Heon Park, Dong Gu Choi
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Publication number: 20150235950Abstract: A semiconductor device includes a spacer having a nitride/oxide/nitride (NON) structure. The spacer is disposed between a sidewall of a bit line and a bit line contact and a sidewall of a storage node contact plug to reduce coupling capacitance between the bit line and a storage node contact plug and between the bit line contact and the storage node contact plug.Type: ApplicationFiled: August 29, 2014Publication date: August 20, 2015Inventors: Ky Hyun HAN, Chang Heon PARK, Dong Gu CHOI
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Publication number: 20140353744Abstract: A semiconductor device includes a substrate including a first active region and second active regions, a bit line structure in contact the first active region, and storage node contacts in contact the second active regions. A top surface of the first active region is lower than the top surfaces of the second active regions.Type: ApplicationFiled: October 18, 2013Publication date: December 4, 2014Applicant: SK hynix Inc.Inventors: Ho-Jin JUNG, Chang-Heon PARK, Dong-Goo CHOI, Joong-Gun YOO, Yeo-Jin YOON, Seong-Hwan AHN, Jin-Wook CHEONG
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Patent number: 7608546Abstract: A method for fabricating a semiconductor device includes forming an etch target layer over a substrate that includes a cell region and a peripheral region. A first hard mask layer, a second hard mask layer, and an anti-reflective coating layer are formed over the etch target layer. A photosensitive pattern is formed over the anti-reflective coating layer. The anti-reflective coating layer is etched to have a width smaller than the width of the photosensitive pattern. The second hard mask layer is etched. A main etching and an over-etching are performed on the first hard mask layer. The etch target layer is then etched.Type: GrantFiled: June 20, 2007Date of Patent: October 27, 2009Assignee: Hynix Semiconductor Inc.Inventors: Sang-Soo Park, Chang-Heon Park, Dong-Ryeol Lee
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Publication number: 20090117748Abstract: A method for manufacturing a phase change memory device, capable of improving reset current characteristics of a phase change layer by preventing thermal loss of the phase change layer. An interlayer dielectric layer having a lower electrode contact is formed on a semiconductor substrate. A phase change layer and an upper electrode layer are sequentially formed on the interlayer dielectric layer. Then, an upper electrode and a phase change pattern are formed by etching predetermined portions of the upper electrode layer and the phase change layer using an etching gas having chlorine gas.Type: ApplicationFiled: June 25, 2008Publication date: May 7, 2009Applicant: Hynix Semiconductor, Inc.Inventors: Dong Ryeol LEE, Chang Heon PARK, Hee Seung SHIN
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Publication number: 20080182395Abstract: A method for fabricating a dual polysilicon gate includes providing a substrate, forming a gate oxide layer over the substrate, forming a polysilicon layer over the gate oxide layer, patterning the polysilicon layer in a condition of applying a relatively low first pressure or a relatively high first bias power, thereby forming gate patterns and exposing a given portion of the gate oxide layer, and forming an oxide layer over the exposed given portion of the gate oxide layer by using a plasma oxidation process while performing an over-etch process on the gate patterns in a condition of applying a second pressure higher than the first pressure or a second bias power lower than the first bias power.Type: ApplicationFiled: December 30, 2007Publication date: July 31, 2008Applicant: Hynix Semiconductor Inc.Inventors: Chang-Heon PARK, Dong-Ryeol Lee
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Publication number: 20080160653Abstract: A method for fabricating a semiconductor device includes forming an etch target layer over a substrate that includes a cell region and a peripheral region. A first hard mask layer, a second hard mask layer, and an anti-reflective coating layer are formed over the etch target layer. A photosensitive pattern is formed over the anti-reflective coating layer. The anti-reflective coating layer is etched to have a width smaller than the width of the photosensitive pattern. The second hard mask layer is etched. A main etching and an over-etching are performed on the first hard mask layer. The etch target layer is then etched.Type: ApplicationFiled: June 20, 2007Publication date: July 3, 2008Applicant: Hynix Semiconductor Inc.Inventors: Sang-Soo PARK, Chang-Heon Park, Dong-Ryeol Lee
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Patent number: 6589861Abstract: A method for fabricating a semiconductor device includes sequentially forming a stopping layer, an intermetal dielectric, and a capping layer on an interlayer dielectric, selectively removing the capping layer, the intermetal dielectric, and the stopping layer to partially expose a surface of the interlayer dielectric to form a hole, selectively removing a side of the intermetal dielectric within the hole, depositing a metal film on an entire surface including the hole to form an air gap in a portion where the side of the intermetal dielectric is removed, and planarizing an entire surface of the metal film to expose a surface of the capping layer to form a plurality of metal lines.Type: GrantFiled: December 17, 2001Date of Patent: July 8, 2003Assignee: Hynix Semiconductor Inc.Inventors: Chang Heon Park, Yun Seok Cho
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Patent number: 6465321Abstract: There is disclosed a method of forming a storage node in a semiconductor device capable of forming a storage node in a vertical structure, by forming a hard mask used to form a noble storage node using a TiN film deposited in a spacer shape on an oxide film and over the oxide film.Type: GrantFiled: November 28, 2000Date of Patent: October 15, 2002Assignee: Hyundai Electronics Industries Co., Ltd.Inventors: Hyeon Sang Shin, Chang Heon Park, Myung Pil Kim
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Publication number: 20020081835Abstract: A method for fabricating a semiconductor device includes sequentially forming a stopping layer, an intermetal dielectric, and a capping layer on an interlayer dielectric, selectively removing the capping layer, the intermetal dielectric, and the stopping layer to partially expose a surface of the interlayer dielectric to form a hole, selectively removing a side of the intermetal dielectric within the hole, depositing a metal film on an entire surface including the hole to form an air gap in a portion where the side of the intermetal dielectric is removed, and planarizing an entire surface of the metal film to expose a surface of the capping layer to form a plurality of metal lines.Type: ApplicationFiled: December 17, 2001Publication date: June 27, 2002Applicant: Hynix Semiconductor Inc.Inventors: Chang Heon Park, Yun Seok Cho