Abstract: An apparatus and method for manufacturing a grilled seaweed includes the apparatus comprising a grilling unit having a first housing with a first inlet opening and a first outlet opening which communicate with each other; a first conveyor for transferring a sheet of seaweed from the first inlet opening to the first outlet opening; a first heating source installed over the first conveyor to discharge a flame onto a top surface of the seaweed being transferred by the first conveyor; and a second heating source installed on both sides of a lower portion of the first conveyor to apply a flame onto a bottom surface of the seaweed being transferred by the first conveyor.

Abstract: A semiconductor device according to an embodiment may include: a light emitting structure; a light transmitting electrode layer disposed on the light emitting structure; and a reflective layer disposed on the light transmitting electrode layer and including a plurality of first openings and a plurality of second openings. The semiconductor device according to the embodiment may include: a first electrode in contact with a first conductivity type semiconductor layer of the light emitting structure; and a second electrode in contact with the light transmitting electrode layer through the plurality of first openings.

Abstract: A semiconductor device according to an embodiment may include a light emitting structure, a first electrode, a second electrode, a first insulating reflective layer, a second insulating reflective layer, a first bonding pad, and a second bonding pad. The light emitting structure may include a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The first insulating reflective layer may be disposed on the first electrode and the second electrode, and may include a first opening exposing an upper surface of the first electrode. The second insulating reflective layer may be disposed on the first electrode and the second electrode, and disposed spaced apart from the first insulating reflective layer, and may include a second opening exposing an upper surface of the second electrode. The first bonding pad may be electrically connected to the first electrode through the first opening.

Abstract: A semiconductor device according to the embodiment may include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer; a first bonding pad disposed on the light emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the light emitting structure and spaced apart from the first bonding pad, and electrically connected to the second conductivity type semiconductor layer; and a reflective layer disposed on the light emitting structure and disposed between the first bonding pad and the second bonding pad. According to the semiconductor device of the embodiment, each of the first bonding pad and the second bonding pad includes a porous metal layer having a plurality of pores and a bonding alloy layer disposed on the porous metal layer.

Abstract: Provided is a composition for enhancing effects of an anticancer agent using an oriental medicine, jaeumganghwa-tang, bojungikgi-tang, or yukmijihwang-tang. More particularly, provided is a composition for treating a neoplastic disease by administering an anticancer agent into an individual, and administering an oriental medicine into the individual within 30 minutes. The composition remarkably reduces side effects occurring when the anticancer agent is administered alone by co-administration of the oriental medicine, reduces cytotoxicity, and has higher anticancer activity than that when the anticancer agent is administered alone.

Abstract: A semiconductor device according to the embodiment may include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer; a first bonding pad disposed on the light emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the light emitting structure and spaced apart from the first bonding pad, and electrically connected to the second conductivity type semiconductor layer; and a reflective layer disposed on the light emitting structure and disposed between the first bonding pad and the second bonding pad. According to the semiconductor device of the embodiment, each of the first bonding pad and the second bonding pad includes a porous metal layer having a plurality of pores and a bonding alloy layer disposed on the porous metal layer.

Abstract: A semiconductor device according to an embodiment may include a light emitting structure, a first electrode, a second electrode, a first insulating reflective layer, a second insulating reflective layer, a first bonding pad, and a second bonding pad. The light emitting structure may include a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The first insulating reflective layer may be disposed on the first electrode and the second electrode, and may include a first opening exposing an upper surface of the first electrode. The second insulating reflective layer may be disposed on the first electrode and the second electrode, and disposed spaced apart from the first insulating reflective layer, and may include a second opening exposing an upper surface of the second electrode. The first bonding pad may be electrically connected to the first electrode through the first opening.

Abstract: The embodiments of the present invention relate to a light emitting device, a method for manufacturing a light emitting device, a light emitting device package, and a lighting device. A light emitting device according to an embodiment has: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a passivation layer disposed on the light emitting structure; and an insulating reflective layer disposed on the passivation layer. The passivation layer may include a first region disposed on an upper surface of the light emitting structure, and a second region disposed on side surfaces of the first conductivity type semiconductor layer, the second conductivity type semiconductor layer, and the active layer.

Abstract: A semiconductor device according to an embodiment may include: a light emitting structure; a light transmitting electrode layer disposed on the light emitting structure; and a reflective layer disposed on the light transmitting electrode layer and including a plurality of first openings and a plurality of second openings. The semiconductor device according to the embodiment may include: a first electrode in contact with a first conductivity type semiconductor layer of the light emitting structure; and a second electrode in contact with the light transmitting electrode layer through the plurality of first openings.

Abstract: The light emitting device package disclosed in the embodiment includes: first and second frames having first and second through holes; a body disposed between the first and second frames; a light emitting device including a first bonding pad and a second bonding pad; and a conductive part in the first and second through holes. wherein at least one of the first and second bonding pads faces the first and second frames and overlaps with the first and second through holes and includes a contact region contacting the conductive part and a first non-contact non-contacting the conducive part.

Abstract: The embodiments of the present invention relate to a light emitting device, a method for manufacturing a light emitting device, a light emitting device package, and a lighting device. A light emitting device according to an embodiment has: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a passivation layer disposed on the light emitting structure; and an insulating reflective layer disposed on the passivation layer. The passivation layer may include a first region disposed on an upper surface of the light emitting structure, and a second region disposed on side surfaces of the first conductivity type semiconductor layer, the second conductivity type semiconductor layer, and the active layer.

Abstract: A semiconductor device according to the embodiment may include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer; a first bonding pad disposed on the light emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the light emitting structure and spaced apart from the first bonding pad, and electrically connected to the second conductivity type semiconductor layer; and a reflective layer disposed on the light emitting structure and disposed between the first bonding pad and the second bonding pad. According to the semiconductor device of the embodiment, each of the first bonding pad and the second bonding pad includes a porous metal layer having a plurality of pores and a bonding alloy layer disposed on the porous metal layer.

Abstract: The present invention relates to a composition for promoting proliferation of bone marrow derived stem cells using an angelicae gigantis radix extract, and more particularly, to a composition which administers a granulocyte colony-stimulating factor into an object, and administers the angelicae gigantis radix extract to the object to promote the proliferation of the bone marrow derived stem cells. The composition of the present invention solves side effects such as splenomegaly which were caused by a method of administering only the G-CSF for proliferation and differentiation of the stem cells, thereby significantly mitigating the side effects through co-administration of the angelicae gigantis radix extract, and further promoting the proliferation and the differentiation of the stem cells.

Abstract: The present invention relates to a composition for promoting the proliferation of stem cells derived from bone marrow using a palmultang extract, and more specifically, to a composition for promoting the proliferation of stem cells derived from bone marrow by administering a granulocyte colony-stimulating factor to a subject and then administering the palmultang extract to the subject. The composition of the present invention remarkably reduces side effects, such as enlargement of the spleen, which are caused by the administration of G-CSF alone for proliferation and differentiation of the stem cells, through administration in combination with the palmultang extract, thereby further promoting the proliferation and differentiation of stem cells.

Abstract: The light emitting device package disclosed in the embodiment includes: first and second frames having first and second through holes; a body disposed between the first and second frames; a light emitting device including a first bonding pad and a second bonding pad; and a conductive part in the first and second through holes. wherein at least one of the first and second bonding pads faces the first and second frames and overlaps with the first and second through holes and includes a contact region contacting the conductive part and a first non-contact non-contacting the conducive part.

Abstract: The present invention relates to a composition for promoting proliferation of bone marrow derived stem cells using an angelicae gigantis radix extract, and more particularly, to a composition which administers a granulocyte colony-stimulating factor into an object, and administers the angelicae gigantis radix extract to the object to promote the proliferation of the bone marrow derived stem cells. The composition of the present invention solves side effects such as splenomegaly which were caused by a method of administering only the G-CSF for proliferation and differentiation of the stem cells, thereby significantly mitigating the side effects through co-administration of the angelicae gigantis radix extract, and further promoting the proliferation and the differentiation of the stem cells.

Abstract: The present invention relates to a composition for promoting the proliferation of stem cells derived from bone marrow using a palmultang extract, and specifically, to a composition for promoting the proliferation of stem cells derived from bone marrow by administering a granulocyte colony-stimulating factor to a subject and then administering the palmultang extract to the subject. The composition of the present invention remarkably reduces side effects, such as enlargement of the spleen, which are caused by the administration of G-CSF alone for proliferation and differentiation of the stem cells, through administration in combination with the palmultang extract, thereby further promoting the proliferation and differentiation of stem cells.

Abstract: Provided is a composition for enhancing effects of an anticancer agent using an oriental medicine, jaeumganghwa-tang, bojungikgi-tang, or yukmijihwang-tang. More particularly, provided is a composition for treating a neoplastic disease by administering an anticancer agent into an individual, and administering an oriental medicine into the individual within 30 minutes. The composition remarkably reduces side effects occurring when the anticancer agent is administered alone by co-administration of the oriental medicine, reduces cytotoxicity, and has higher anticancer activity than that when the anticancer agent is administered alone.

Abstract: The present invention relates to a composition for promoting the proliferation of stem cells derived from bone marrow using a palmultang extract, and more specifically, to a composition for promoting the proliferation of stern cells derived from bone marrow by administering a granulocyte colony-stimulating factor to a subject and then administering the palmultang extract to the subject. The composition of the present invention remarkably reduces side effects, such as enlargement of the spleen, which are caused by the administration of G-CSF alone for proliferation and differentiation of the stern cells, through administration in combination with the palmultang extract, thereby further promoting the proliferation and differentiation of stem cells.

Abstract: The present invention relates to a composition for promoting proliferation of bone marrow derived stem cells using an angelicae gigantis radix extract, and more particularly, to a composition which administers a granulocyte colony-stimulating factor into an object, and administers the angelicae gigantis radix extract to the object to promote the proliferation of the bone marrow derived stem cells. The composition of the present invention solves side effects such as splenomegaly which were caused by a method of administering only the G-CSF for proliferation and differentiation of the stem cells, thereby significantly mitigating the side effects through co-administration of the angelicae gigantis radix extract, and further promoting the proliferation and the differentiation of the stem cells.