Abstract: The present invention relates to an organic compound having acetylene group(s), a thin film formed by vacuum deposition polymerization using said organic compound, vacuum deposition polymerization to form said thin film, and an electroluminescence device containing said thin film. More particularly, the present invention relates to an organic compound having at least one acetylene groups, vacuum deposition polymerization in which said organic compound is deposited on the substrate and simultaneously or then polymerized by heat treatment or UV irradiation to form a polymer thin film, and an electroluminescence device using at least one layer of said thin film.

Abstract: A method for forming wells of a semiconductor device, being capable of removing the topology between n- and p-well regions. The method of the present invention provides a twin well structure wherein the n-well region has a higher level than the p-well region. This method includes the steps of sequentially forming a buffering film and an oxidizable film over a semiconductor substrate, forming an anti-oxidation film over the oxidizable film, removing a portion of the anti-oxidation film disposed at a first well region of the semiconductor substrate, implanting impurity ions in the first well region of the semiconductor substrate and annealing the resulting structure, thereby forming a first well in the substrate, removing the anti-oxide film and the oxidizable film both disposed at a second well region of the substrate, and implanting impurity ions in the second well region of the semiconductor substrate and annealing the resulting structure, thereby forming a second well in the substrate.

Abstract: An isolation region structure of a semiconductor device and a method for fabricating the same using both a buried oxide isolation technique and a local oxidation of silicon technique, thereby capable of having an advantage of high integrity. In the isolation region structure, narrow trenches are filled only with a polysilicon film whereas wide trenches are filled with a field oxide film and a polysilicon film so as to isolate adjacent active regions from each other.

Abstract: This invention relates to a method for fabrication of MOS transistors having LDD(Lightly Doped Drain) structure which comprises the steps of forming a gate insulation film on a semiconductor substrate of a first conduction type, forming a conduction layer for forming a gate pole on the gate insulation film, forming an oxidation prevention layer on the conduction layer, carrying out selective etchings of the oxidation prevention layer and the conduction layer to a certain thicknesses of areas except the gate pole area, forming an oxide film by an oxidation of the exposed portion of the conduction layer, carrying out a selective etching of the oxide film by using the oxidation prevention layer as a mask, forming a high density impurity area of a second conduction type in a predetermined area of the semiconductor substrate by a high density ion injection of the second conduction type impurity, removing the oxidation prevention layer and the oxide film, forming a low density impurity area of the second conduction

Abstract: A conductive polymeric composite with an improved electrical activation density obtained by compounding a ferrocene derivative used as a dopant with a polypyrrole of a conductive polymer and a method for preparing the same. The conductive composite can be produced by use of a chemical method or an electrochemical method. In the case of using the chemical method, pyrrole or its derivative is dissolved in a solution containing a ferrocene derivative, together with one or mixture of ferric trichloride, ammonium persulfate and copper chloride-aluminum chloride. In the case of using the electrochemical method, a solution, in which pyrrole or its derivative is dissolved together with ferrocene derivative, is used, as an electrolytic solution, alone or together with a solution in which an electrolyte of inorganic salt such as ammonium salt, lithium perchloric acid and tetraalkylammonium perchloric acid is dissolved.

Abstract: A method of making a semiconductor device capable of simplifying the overall manufacturing processes and carrying out the reliable interconnections between wires.

Abstract: An on-screen display for a camcorder comprising a zoom motor, a zoom motor gear, a zoom gear, a zoom lens, a microcomputer adapted for outputting switching control output signals, an on-screen display character signal generator adapted for generating on-screen display character signal, a luminance/color processing circuit adapted for outputting composite video signal, a zooming position detector device which comprises a variable resistor and a variable resistor gear, a reference voltage variation unit which comprises a plurality of transistors and a plurality of emitter resistors and a ground resistor, a comparison unit which comprises a comparator having an inversion input terminal and a non-inversion input terminal. The present invention can provide an on-screen display for a camcorder which can prevent the user from missing the important scene and provide good pictures which are prevented from being shaken and out of composition.