Abstract: A method of cutting a substrate including a device region and a scribe lane region includes selectively forming a passivation layer in the device region of the substrate, selectively forming a self-assembled monolayer on the passivation layer, and performing plasma cutting in the scribe lane region.

Abstract: A method of cutting a substrate including a device region and a scribe lane region includes selectively forming a passivation layer in the device region of the substrate, selectively forming a self-assembled monolayer on the passivation layer, and performing plasma cutting in the scribe lane region.

Abstract: A semiconductor package may include a first semiconductor chip including a first surface facing a package substrate, a second surface opposite to the first surface, and at least one through-electrode penetrating the first semiconductor chip, a molding layer molding the first semiconductor chip and exposing the second surface of the first semiconductor chip, a second semiconductor chip stacked on the second surface of the first semiconductor chip, and a non-conductive film provided between the first and second semiconductor chips. The second semiconductor chip includes an overhang portion extending past an edge of the first semiconductor chip. For example, a size of the second semiconductor chip may be greater than that of the first semiconductor chip, so the second semiconductor chip has an overhang. The second semiconductor chip includes at least one interconnecting terminal electrically connected to the at least one through-electrode.

Abstract: A semiconductor package may include a first semiconductor chip including a first surface facing a package substrate, a second surface opposite to the first surface, and at least one through-electrode penetrating the first semiconductor chip, a molding layer molding the first semiconductor chip and exposing the second surface of the first semiconductor chip, a second semiconductor chip stacked on the second surface of the first semiconductor chip, and a non-conductive film provided between the first and second semiconductor chips. The second semiconductor chip includes an overhang portion extending past an edge of the first semiconductor chip. For example, a size of the second semiconductor chip may be greater than that of the first semiconductor chip, so the second semiconductor chip has an overhang. The second semiconductor chip includes at least one interconnecting terminal electrically connected to the at least one through-electrode.

Abstract: Apparatuses of manufacturing semiconductor packages are provided. An apparatus includes a chuck having a body, a porous plate disposed on the body, and a buffer pad disposed on the plate to provide a place on which a plurality of chips are loaded. The buffer pad has elasticity greater than the plate. The apparatus also includes a vacuum part supplying vacuum to the chuck so that the plurality of chips are sucked onto the buffer pad. Methods of manufacturing semiconductor packages using the apparatus are also provided.

Abstract: A semiconductor package may include a first semiconductor chip including a first surface facing a package substrate, a second surface opposite to the first surface, and at least one through-electrode penetrating the first semiconductor chip, a molding layer molding the first semiconductor chip and exposing the second surface of the first semiconductor chip, a second semiconductor chip stacked on the second surface of the first semiconductor chip, and a non-conductive film provided between the first and second semiconductor chips. The second semiconductor chip includes an overhang portion extending past an edge of the first semiconductor chip. For example, a size of the second semiconductor chip may be greater than that of the first semiconductor chip, so the second semiconductor chip has an overhang. The second semiconductor chip includes at least one interconnecting terminal electrically connected to the at least one through-electrode.

Abstract: Provided are semiconductor packages and methods of fabricating the same. The method may include mounting a first semiconductor chip including chip and heat-transfer regions and a lower heat-transfer pattern disposed on the heat-transfer region, on a substrate, mounting a second semiconductor chip on the chip region of the first semiconductor chip, forming a mold layer on the substrate to enclose the first and second semiconductor chips, forming an opening in the mold layer to expose at least a portion of the lower heat-transfer pattern, forming a heat-pathway pattern in the opening, and forming a heat-dissipating part on the second semiconductor chip and the mold layer to be connected to the heat-pathway pattern.

Abstract: A method of manufacturing a chip-stacked semiconductor package, the method including preparing a base wafer including a plurality of first chips each having a through-silicon via (TSV); bonding the base wafer including the plurality of first chips to a supporting carrier; preparing a plurality of second chips; forming stacked chips by bonding the plurality of second chips to the plurality of first chips; sealing the stacked chips with a sealing portion; and separating the stacked chips from each other.

Abstract: A substrate of a semiconductor package includes a first wiring substrate having a first surface and a second surface facing each other, the first surface having a semiconductor chip mounted thereon, a first support carrier, and an adhesive film connecting the second surface and the first support carrier.

Abstract: A substrate of a semiconductor package includes a first wiring substrate having a first surface and a second surface facing each other, the first surface having a semiconductor chip mounted thereon, a first support carrier, and an adhesive film connecting the second surface and the first support carrier.

Abstract: A substrate of a semiconductor package includes a first wiring substrate having a first surface and a second surface facing each other, the first surface having a semiconductor chip mounted thereon, a first support carrier, and an adhesive film connecting the second surface and the first support carrier.

Abstract: Provided are semiconductor packages and methods of fabricating the same. The method may include mounting a first semiconductor chip including chip and heat-transfer regions and a lower heat-transfer pattern disposed on the heat-transfer region, on a substrate, mounting a second semiconductor chip on the chip region of the first semiconductor chip, forming a mold layer on the substrate to enclose the first and second semiconductor chips, forming an opening in the mold layer to expose at least a portion of the lower heat-transfer pattern, forming a heat-pathway pattern in the opening, and forming a heat-dissipating part on the second semiconductor chip and the mold layer to be connected to the heat-pathway pattern.

Abstract: A method and apparatus to manufacture a flip chip package includes dotting a flux on a first preliminary bump of a package substrate, attaching a preliminary bump of a first semiconductor chip to the first preliminary bump of the package substrate via the flux, dotting a flux on a second preliminary bump of the package substrate, and attaching a preliminary bump of a second semiconductor chip to the second preliminary bump of the package substrate via the flux. Accordingly, an evaporation of the flux on the preliminary bump of the package substrate may be suppressed.

Abstract: A method of manufacturing a chip-stacked semiconductor package, the method including preparing a base wafer including a plurality of first chips each having a through-silicon via (TSV); bonding the base wafer including the plurality of first chips to a supporting carrier; preparing a plurality of second chips; forming stacked chips by bonding the plurality of second chips to the plurality of first chips; sealing the stacked chips with a sealing portion; and separating the stacked chips from each other.

Abstract: A method and apparatus to manufacture a flip chip package includes dotting a flux on a first preliminary bump of a package substrate, attaching a preliminary bump of a first semiconductor chip to the first preliminary bump of the package substrate via the flux, dotting a flux on a second preliminary bump of the package substrate, and attaching a preliminary bump of a second semiconductor chip to the second preliminary bump of the package substrate via the flux. Accordingly, an evaporation of the flux on the preliminary bump of the package substrate may be suppressed.

Abstract: A method of manufacturing a chip-stacked semiconductor package, the method including preparing a base wafer including a plurality of first chips each having a through-silicon via (TSV); bonding the base wafer including the plurality of first chips to a supporting carrier; preparing a plurality of second chips; forming stacked chips by bonding the plurality of second chips to the plurality of first chips; sealing the stacked chips with a sealing portion; and separating the stacked chips from each other.

Abstract: A semiconductor device includes a semiconductor substrate and a via electrode. The via electrode has a first portion on the substrate and extends towards the substrate and has a plurality of spikes that extends from the first portion into the substrate, each of the spikes being spaced apart form one another.

Abstract: A substrate of a semiconductor package includes a first wiring substrate having a first surface and a second surface facing each other, the first surface having a semiconductor chip mounted thereon, a first support carrier, and an adhesive film connecting the second surface and the first support carrier.

Abstract: A fabricating method of a semiconductor device may include forming a semiconductor die on a supporting wafer, and picking up the die from the wafer by attaching to the die a transfer unit, the transfer unit including a head unit configured to enable twisting movement, and performing the twisting movement. A fabricating method of a semiconductor device may include forming a first semiconductor device on a supporting wafer; and picking up the first semiconductor device from the wafer, moving the first semiconductor device onto a second semiconductor device, and bonding the first semiconductor device to the second semiconductor device while maintaining the first semiconductor device oriented so that a surface faces upwardly. A fabricating method of a semiconductor device may include forming a first semiconductor device on a supporting wafer, attaching to the first semiconductor device a transfer unit configured to enable twisting movement, and performing the twisting movement.

Abstract: Apparatuses of manufacturing semiconductor packages are provided. An apparatus includes a chuck having a body, a porous plate disposed on the body, and a buffer pad disposed on the plate to provide a place on which a plurality of chips are loaded. The buffer pad has elasticity greater than the plate. The apparatus also includes a vacuum part supplying vacuum to the chuck so that the plurality of chips are sucked onto the buffer pad. Methods of manufacturing semiconductor packages using the apparatus are also provided.