Patents by Inventor Chang-Sup Mun

Chang-Sup Mun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060183297
    Abstract: Provided are an anionic surfactant-containing etching solution for removal of an oxide film, preparation methods thereof, and methods of fabricating a semiconductor device using the etching solution. The etching solution includes a hydrofluoric acid (HF), deionized water, and an anionic surfactant. The anionic surfactant is a compound in which an anime salt is added as a counter ion, as represented by R1—OSO3?HA+, R1—CO2?HA+, R1—PO42?(HA+)2, (R1)2—PO4?HA+, or R1—SO3?HA+ where R1 is a straight or branched hydrocarbon group of C4 to C22 and A is ammonia or amine. The etching solution provides a high etching selectivity ratio of an oxide film to a nitride film or a polysilicon film. Therefore, in a semiconductor device fabrication process such as a STI device isolation process or a capacitor formation process, when an oxide film is exposed together with a nitride film or a polysilicon film, the etching solution can be efficiently used in selectively removing only the oxide film.
    Type: Application
    Filed: May 16, 2005
    Publication date: August 17, 2006
    Inventors: Chang-Sup Mun, Hyung-Ho Ko, Woo-Gwan Shim, Chang-Ki Hong, Sang-Jun Choi
  • Publication number: 20060027252
    Abstract: The present invention provides methods of processing a substrate by contacting the substrate with an inorganic solution including an organic additive, rinsing the substrate with an organic alcohol, and rinsing the substrate with deionized water. Related substrates and devices are also disclosed.
    Type: Application
    Filed: July 29, 2005
    Publication date: February 9, 2006
    Inventors: Chang-Sup Mun, Chang-Ki Hong, Sang-Jun Choi, Hyung-Ho Ko, Sang-Yong Kim
  • Publication number: 20050260830
    Abstract: This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.
    Type: Application
    Filed: March 24, 2005
    Publication date: November 24, 2005
    Inventors: Doo-Won Kwon, Hyung-Ho Ko, Chang-Sup Mun, Woo-Gwan Shim, Im-Soo Park, Yu-Kyung Kim, Jeong-Nam Han
  • Publication number: 20050239672
    Abstract: Disclosed are a cleaning solution for preventing damage of a silicon germanium layer when cleaning a semiconductor device including the silicon germanium layer and a cleaning method using the same. The cleaning solution of a silicon germanium layer includes from about 0.01 to about 2.5 percent by weight of a non-ionic surfactant with respect to 100 percent by weight of the cleaning solution, about 0.05 to about 5.0 percent by weight of an alkaline compound with respect to the cleaning solution and a remaining amount of pure water. The damage to an exposed silicon germanium layer can be prevented when cleaning a silicon substrate having a silicon germanium layer. Impurities present on the surface portion of the silicon germanium layer can be effectively removed.
    Type: Application
    Filed: April 13, 2005
    Publication date: October 27, 2005
    Inventors: Chang-Sup Mun, Doo-Won Kwon, Hyung-Ho Ko, Chang-Ki Hong, Sang-Jun Choi
  • Publication number: 20050170981
    Abstract: A cleaning composition comprises an alkali solution, pure water, and a surfactant represented by the following chemical formula: R1-OSO3—HA+ wherein R1 is one selected from a group consisting of a butyl group, an isobutyl group, an isooctyl group, a nonyl phenyl group, an octyl phenyl group, a decyl group, a tridecyl group, a lauryl group, a myristyl group, a cetyl group, a stearyl group, an oleyl group, a licenoleyl group and a behnyl group, and A is one selected from a group consisting of ammonia, ethanol amine, diethanol amine and triethanol amine.
    Type: Application
    Filed: January 19, 2005
    Publication date: August 4, 2005
    Inventors: Chang-Sup Mun, Chang-Ki Hong, Sang-Jun Choi, Woo-Sung Han
  • Publication number: 20040242446
    Abstract: A cleaning solution having a corrosion inhibitor and a surfactant is disclosed.
    Type: Application
    Filed: February 9, 2004
    Publication date: December 2, 2004
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chang-Sup Mun, Sang-Jun Choi, Woo-Sung Han, Chang-Ki Hong