Patents by Inventor Chang-Wook Jeong

Chang-Wook Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130144307
    Abstract: Provided is a surgical robot system for realizing single-port surgery and multi-port surgery, the system comprising: an operating device; and a controlling device for electro-mechanically controlling the operating device, wherein the operating device includes an alignment section having a plurality of main robot arms, and a plurality of manipulating sections each having a plurality of auxiliary robot arms, and in the multi-port surgery mode, the plurality of main robot arms and at least a portion of the plurality of auxiliary robot arms are operated so that each surgical tool coupled to each of the plurality of manipulating sections can be placed in correspondence with each of a plurality of incisions, and in the single-port surgery mode, the plurality of main robot arms and at least a portion of the plurality of auxiliary robot arms are operated so that each surgical tool coupled to each of the plurality of manipulating sections can be aligned in correspondence with one incision.
    Type: Application
    Filed: April 14, 2011
    Publication date: June 6, 2013
    Inventors: Chang Wook Jeong, Hyung Tae Kim
  • Patent number: 8119478
    Abstract: A phase-change random-access memory (PRAM) device includes a chalcogenide element, the chalcogenide element comprising a material which can assume a crystalline state or an amorphous state upon application of a heating current. A first contact is connected to a first region of the chalcogenide element and has a first cross-sectional area. A second contact is connected to a second region of the chalcogenide element and having a second cross-sectional area. A first programmable volume of the chalcogenide material is defined in the first region of the chalcogenide element, a state of the first programmable volume being programmable according to a resistance associated with the first contact. A second programmable volume of the chalcogenide material is defined in the second region of the chalcogenide element, a state of the second programmable volume being programmable according to a second resistance associated with the second contact.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: February 21, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-Cheol Jeong, Hyeong-Jun Kim, Se-Ho Lee, Jae-Hyun Park, Chang-Wook Jeong
  • Patent number: 8049201
    Abstract: A semiconductor memory device includes first conductive lines on a substrate, an interlayer insulating layer with a plurality of via holes on the substrate, second conductive lines on the interlayer insulating layer, and a resistive memory material in the via holes and electrically connected to the first and second conductive lines, the resistive memory material having a vertically non-uniform specific resistance profile with respect to the substrate.
    Type: Grant
    Filed: January 29, 2008
    Date of Patent: November 1, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Chang-wook Jeong
  • Patent number: 8026543
    Abstract: A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation. In one embodiment, a semiconductor memory device includes a molding layer disposed over semiconductor substrate, a phase-changeable material pattern, and an oxidation barrier of electrically insulative material. The molding layer has a protrusion at its upper portion. One portion of the phase-changeable material pattern overlies the protrusion of the molding layer, and another portion of the phase-changeable material pattern extends through the protrusion. The electrically insulative material of the oxidation barrier may cover the phase-changeable material pattern and/or extend along and cover the entire area at which the protrusion of the molding layer and the portion of the phase-change material pattern disposed on the protrusion adjoin.
    Type: Grant
    Filed: December 18, 2008
    Date of Patent: September 27, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yoon-Jong Song, Young-Nam Hwang, Sang-Don Nam, Sung-Lae Cho, Gwan-Hyeob Koh, Choong-Man Lee, Bong-Jin Kuh, Yong-Ho Ha, Su-Youn Lee, Chang-Wook Jeong, Ji-Hye Yi, Kyung-Chang Ryoo, Se-Ho Lee, Su-Jin Ahn, Soon-Oh Park, Jang-Eun Lee
  • Publication number: 20110213384
    Abstract: The present invention relates to a surgical robot system having a tool for minimally invasive surgery. More specifically, the present invention relates to a surgical robot system that helps a user such as a surgeon control the tool for minimally invasive surgery in a dexterous and convenient manner.
    Type: Application
    Filed: October 30, 2009
    Publication date: September 1, 2011
    Inventor: Chang Wook Jeong
  • Publication number: 20110172648
    Abstract: The present invention relates to an easy-to-control tool for minimally invasive surgery and a method for using the same.
    Type: Application
    Filed: September 9, 2009
    Publication date: July 14, 2011
    Inventor: Chang Wook Jeong
  • Patent number: 7974115
    Abstract: A switching device disposed in a substrate is turned on and a program current is applied to a fuse electrically connected to a switching device, thereby cutting the fuse. The fuse includes a first electrode electrically connected to the switching device, a second electrode spaced apart from the first electrode, and a chalcogenide pattern disposed between the first and second electrodes.
    Type: Grant
    Filed: December 15, 2009
    Date of Patent: July 5, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-Wook Jeong, Jun-Hyok Kong, Hyung-Rok Oh
  • Publication number: 20110152922
    Abstract: The present invention relates to an easy-to-control tool for minimally invasive surgery and a method for using the same.
    Type: Application
    Filed: August 12, 2009
    Publication date: June 23, 2011
    Inventor: Chang Wook Jeong
  • Publication number: 20110106146
    Abstract: The present invention relates to an easy-to-control tool for minimally invasive surgery.
    Type: Application
    Filed: May 28, 2009
    Publication date: May 5, 2011
    Inventor: Chang Wook Jeong
  • Publication number: 20110106145
    Abstract: The present invention relates to an easy-to-control tool for minimally invasive surgery.
    Type: Application
    Filed: June 24, 2009
    Publication date: May 5, 2011
    Inventor: Chang Wook Jeong
  • Patent number: 7889548
    Abstract: According to one embodiment, at least a portion of the phase change material including a first crystalline phase is converted to one of a second crystalline phase and an amorphous phase. The second crystalline phase transitions to the amorphous phase more easily than the first crystalline phase. For example, the first crystalline phase may be a hexagonal closed packed structure, and the first crystalline phase may be a face centered cubic structure.
    Type: Grant
    Filed: September 21, 2009
    Date of Patent: February 15, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-Wook Jeong, Jun-Hyok Kong, Ji-Hye Yi, Beak-Hyung Cho
  • Patent number: 7778079
    Abstract: In a memory device and in a method of programming the same, a memory device comprises: a plurality of memory cells, each memory cell comprising a resistance-changeable material that has an initial resistance that is determined in response to an applied programming current in a programming operation; and a modification circuit that modifies the resistance of the memory cell following a programming operation of the memory cell to vary the resistance of the memory cell from the initial resistance to a second resistance by applying a saturation current in a saturation operation. Each memory cell is connected to a conduction line of the memory device that is used to apply the programming current to program the resistance of the corresponding memory cell in the programming operation, that is used to apply the saturation current to the corresponding memory cell in the saturation operation and that is used to apply a read current to read the resistance of the corresponding memory cell in a subsequent read operation.
    Type: Grant
    Filed: March 28, 2008
    Date of Patent: August 17, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-Wook Jeong, Dae-Hwan Kang, Hyeong-Jun Kim, Jae-Min Shin, Seung-Pil Ko
  • Patent number: 7701749
    Abstract: In a method of controlling resistance drift in a memory cell of a resistance-changeable material memory device, the resistance changeable material in the memory cell is treated so that a drift parameter for the memory cell is less than about 0.18, wherein a change in resistance of a memory cell over the time period is determined according to the relationship: Rdrift=RinitialĂ—t?; where Rdrift represents a final resistance of the memory cell following the time period, Rinitial represents the initial resistance of the memory cell following the programming operation, t represents the time period; and ? represents the drift parameter.
    Type: Grant
    Filed: March 28, 2008
    Date of Patent: April 20, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-Wook Jeong, Dae-Hwan Kang, Hyeong-Jun Kim, Seung-Pil Ko, Dong-Won Lim
  • Publication number: 20100090194
    Abstract: A phase-change random-access memory (PRAM) device includes a chalcogenide element, the chalcogenide element comprising a material which can assume a crystalline state or an amorphous state upon application of a heating current. A first contact is connected to a first region of the chalcogenide element and has a first cross-sectional area. A second contact is connected to a second region of the chalcogenide element and having a second cross-sectional area. A first programmable volume of the chalcogenide material is defined in the first region of the chalcogenide element, a state of the first programmable volume being programmable according to a resistance associated with the first contact. A second programmable volume of the chalcogenide material is defined in the second region of the chalcogenide element, a state of the second programmable volume being programmable according to a second resistance associated with the second contact.
    Type: Application
    Filed: December 17, 2009
    Publication date: April 15, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Won-Cheol Jeong, Hyeong-Jun Kim, Se-Ho Lee, Jae-Hyun Park, Chang-Wook Jeong
  • Publication number: 20100090213
    Abstract: A method of programming a one-time programmable device is provided. A switching device disposed in a substrate is turned on and a program current is applied to a fuse electrically connected to the switching device, thereby cutting the fuse. The fuse includes a first electrode electrically connected to the switching device, a second electrode spaced apart from the first electrode, and a chalcogenide pattern disposed between the first and second electrodes. Related one-time programmable devices, phase change memory devices and electronic systems are also disclosed.
    Type: Application
    Filed: December 15, 2009
    Publication date: April 15, 2010
    Inventors: Chang-Wook Jeong, Jun-Hyok Kong, Hyung-Rok Oh
  • Patent number: 7667998
    Abstract: A PRAM and method of forming the same are disclosed. In various embodiments, the PRAM includes a lower insulation layer formed on a semiconductor substrate, a phase change material pattern formed on the lower insulation layer and a heating electrode contacting the phase change material pattern. The heating electrode can be formed of a material having a positive temperature coefficient such that specific resistance of the material increases as a function of temperature.
    Type: Grant
    Filed: August 22, 2006
    Date of Patent: February 23, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-Cheol Jeong, Se-Ho Lee, Jae-Hyun Park, Chang-Wook Jeong
  • Patent number: 7656694
    Abstract: A method of programming a one-time programmable device is provided. A switching device disposed in a substrate is turned on and a program current is applied to a fuse electrically connected to the switching device, thereby cutting the fuse. The fuse includes a first electrode electrically connected to the switching device, a second electrode spaced apart from the first electrode, and a chalcogenide pattern disposed between the first and second electrodes. Related one-time programmable devices, phase change memory devices and electronic systems are also disclosed.
    Type: Grant
    Filed: November 29, 2006
    Date of Patent: February 2, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-Wook Jeong, Jun-Hyok Kong, Hyung-Rok Oh
  • Publication number: 20100015785
    Abstract: According to one embodiment, at least a portion of the phase change material including a first crystalline phase is converted to one of a second crystalline phase and an amorphous phase. The second crystalline phase transitions to the amorphous phase more easily than the first crystalline phase. For example, the first crystalline phase may be a hexagonal closed packed structure, and the first crystalline phase may be a face centered cubic structure.
    Type: Application
    Filed: September 21, 2009
    Publication date: January 21, 2010
    Inventors: Chang-Wook Jeong, Jun-Hyok Kong, Ji-Hye Yi, Beak-Hyung Cho
  • Patent number: 7612360
    Abstract: An integrated circuit memory cell includes a substrate having a first semiconductor region of first conductivity type (e.g., N-type) therein, which may define a portion of a word line within the substrate. An electrically insulating layer is provided on the substrate. The electrically insulating layer has an opening therein that extends opposite a recess in the first semiconductor region. A first insulating spacer is provided on a sidewall of the recess in the first semiconductor region. A diode is provided in the opening. The diode has a first terminal electrically coupled to a bottom of the recess in the first semiconductor region. A variable resistivity material region (e.g., phase-changeable material region) is also provided. The variable resistivity material region is electrically coupled to a second terminal of the diode.
    Type: Grant
    Filed: July 25, 2007
    Date of Patent: November 3, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang-woo Lee, Jae-hee Oh, Chang-wook Jeong
  • Patent number: 7606064
    Abstract: According to one embodiment, at least a portion of the phase change material including a first crystalline phase is converted to one of a second crystalline phase and an amorphous phase. The second crystalline phase transitions to the amorphous phase more easily than the first crystalline phase. For example the first crystalline phase may be a hexagonal closed packed structure and the first crystalline phase may be a face centered cubic structure.
    Type: Grant
    Filed: May 30, 2006
    Date of Patent: October 20, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-Wook Jeong, Jun-Hyok Kong, Ji-Hye Yi, Beak-Hyung Cho