Abstract: A solder composite is provided. The solder composite may include: a metal-based solder matrix, a capsule dispersed in the solder matrix, and a self-healing material that is encapsulated in the capsule. The self-healing material may be configured to react with the solder matrix when in contact with the solder matrix such that at least one of an electrically conductive intermetallic compound and an electrically conductive alloy is formed.

Abstract: The present disclosure relates to a method of transferring semiconductor elements from a non-flexible substrate to a flexible substrate. The present disclosure also relates to a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements. The semiconductor elements grown or formed on a non-flexible substrate may be effectively transferred to a resin layer while maintaining an arrangement of the semiconductor elements. The resin layer may function as a flexible substrate for supporting the vertical semiconductor elements.

Abstract: A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer.

Abstract: A bonded substrate structure includes a siloxane-based monomer layer between a first substrate and a second substrate, the siloxane-based monomer layer bonding the first substrate and the second substrate. The first substrate and the second substrate may be one of a silicon substrate and a silicon oxide substrate, respectively.

Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

Abstract: A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.

Abstract: A superhydrophobic electromagnetic field shielding material includes a curable resin and a carbon material, the superhydrophobic electromagnetic field shielding material including at least two depression patterns on an exposed surface. The at least two depression patterns may include a first depression pattern including a plurality of grooves having a same shape and a second depression pattern including a plurality of grooves having a same shape. The carbon material may be about 3 wt % to about 20 wt % based on the total weight of the superhydrophobic electromagnetic field shielding material.

Abstract: A graphene device manufacturing apparatus includes an electrode, a graphene structure including a metal catalyst layer formed on a substrate, a protection layer, and a graphene layer between the protection layer and the metal catalyst layer, a power unit configured to apply a voltage between the electrode and the metal catalyst layer, and an electrolyte in which the graphene structure is at least partially submerged.

Abstract: An LED package includes a substrate having an electrically conductive portion and an electrically non-conductive portion composed of an oxide of the conductive portion; an LED mounted on the conductive portion and electrically connected to the conductive portion; a first electrode disposed on the non-conductive portion and electrically connected to the LED by a wire; and a second electrode disposed on the substrate and electrically connected to the LED.

Abstract: A method for forming a selective ohmic contact for a Group III-nitride heterojunction structured device may include forming a conductive layer and a capping layer on an epitaxial substrate including at least one Group III-nitride heterojunction layer and having a defined ohmic contact region, the capping layer being formed on the conductive layer or between the conductive layer and the Group III-nitride heterojunction layer in one of the ohmic contact region and non-ohmic contact region, and applying at least one of a laser annealing process and an induction annealing process on the substrate at a temperature of less than or equal to about 750° C. to complete the selective ohmic contact in the ohmic contact region.

Abstract: A soldering structure using Zn includes a bonding layer which contains Zn; and a lead-free solder which bonds and reacts to the bonding layer. The bonding layer can be a Zn alloy layer or a multilayer including a Zn layer. Accordingly, the characteristics of the soldering structure can be improved by involving the high reactive Zn to the interfacial reaction of the soldering.

Abstract: Transistors and methods of manufacturing the same may include a gate on a substrate, a channel layer having a three-dimensional (3D) channel region covering at least a portion of a gate, a source electrode over a first region of the channel layer, and a drain electrode over a second region of the channel layer.

Abstract: A method of manufacturing a graphene device may include forming a device portion including a graphene layer on the first substrate; attaching a second substrate on the device portion of the first substrate; and removing the first substrate. The removing of the first substrate may include etching a sacrificial layer between the first substrate and the graphene layer. After removing the first substrate, a third substrate may be attached on the device portion. After attaching the third substrate, the second substrate may be removed.

Abstract: A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.

Abstract: An electrode structure, a GaN-based semiconductor device including the electrode structure, and methods of manufacturing the same, may include a GaN-based semiconductor layer and an electrode structure on the GaN-based semiconductor layer. The electrode structure may include an electrode element including a conductive material and a diffusion layer between the electrode element and the GaN-based semiconductor layer. The diffusion layer may include a material which is an n-type dopant with respect to the GaN-based semiconductor layer, and the diffusion layer may contact the GaN-based semiconductor layer. A region of the GaN-based semiconductor layer contacting the diffusion layer may be doped with the n-type dopant. The material of the diffusion layer may comprise a Group 4 element.

Abstract: A superhydrophobic electromagnetic field shielding material includes a curable resin and a carbon material, the superhydrophobic electromagnetic field shielding material including at least two depression patterns on an exposed surface. The at least two depression patterns may include a first depression pattern including a plurality of grooves having a same shape and a second depression pattern including a plurality of grooves having a same shape. The carbon material may be about 3 wt % to about 20 wt % based on the total weight of the superhydrophobic electromagnetic field shielding material.

Abstract: In one embodiment, the electrowetting device includes a first medium; a second medium that is not mixed with the first medium and has a refractive index different from a refractive index of the first medium; an upper electrode that adjusts an angle of a boundary surface between the first medium and the second medium; and a barrier wall that has a side surface surrounding the first and second mediums, allows the upper electrode to be disposed on a portion of the side surface, and has irregular widths.

Abstract: An LED package and a fabrication method thereof are provided. The LED package includes an upper metal plate having an LED-receiving hole therein; a lower metal plate disposed under the upper metal plate; and an insulator which the upper metal plate and the lower metal plate from each other. A portion of the lower metal plate is exposed via the LED-receiving hole and an LED is mounted on the exposed portion of the lower metal plate and is electrically connected to both of the upper and lower metal plates. A protective cover encloses and protects exposed surfaces of the upper and lower metal plates.

Abstract: A method of manufacturing an image forming element which can reduce a manufacturing time and a manufacturing cost with a simplified manufacturing process, an image forming element manufactured by the method, and an image forming apparatus having the same.

Abstract: An image forming element includes an image drum including a plurality of ring electrodes and a slot. The plurality of ring electrodes are formed to be spaced apart from one another on a circumference of the image drum. The slot is formed in a longitudinal direction on the image drum. A connecting member includes a plurality of connecting electrodes and is disposed inside the image drum so that an end of the connecting member is received in the slot. The connecting electrodes are electrically connected with the ring electrodes one to one on the same line.